JP5385496B2 - バイアス回路を一体化した金属酸化膜半導体デバイス - Google Patents

バイアス回路を一体化した金属酸化膜半導体デバイス Download PDF

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Publication number
JP5385496B2
JP5385496B2 JP2004366956A JP2004366956A JP5385496B2 JP 5385496 B2 JP5385496 B2 JP 5385496B2 JP 2004366956 A JP2004366956 A JP 2004366956A JP 2004366956 A JP2004366956 A JP 2004366956A JP 5385496 B2 JP5385496 B2 JP 5385496B2
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Prior art keywords
transistor
bias
current
terminal
mos
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Expired - Fee Related
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JP2004366956A
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English (en)
Japanese (ja)
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JP2005184838A (ja
Inventor
ロペツ オズヴァルド
モリソン ロット ジョエル
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Agere Systems LLC
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Agere Systems LLC
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2004366956A 2003-12-23 2004-12-20 バイアス回路を一体化した金属酸化膜半導体デバイス Expired - Fee Related JP5385496B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/744563 2003-12-23
US10/744,563 US6956437B2 (en) 2003-12-23 2003-12-23 Metal-oxide-semiconductor device having integrated bias circuit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012223941A Division JP5349666B2 (ja) 2003-12-23 2012-10-09 バイアス回路を一体化した金属酸化膜半導体デバイス

Publications (2)

Publication Number Publication Date
JP2005184838A JP2005184838A (ja) 2005-07-07
JP5385496B2 true JP5385496B2 (ja) 2014-01-08

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
JP2004366956A Expired - Fee Related JP5385496B2 (ja) 2003-12-23 2004-12-20 バイアス回路を一体化した金属酸化膜半導体デバイス
JP2012223941A Expired - Fee Related JP5349666B2 (ja) 2003-12-23 2012-10-09 バイアス回路を一体化した金属酸化膜半導体デバイス

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JP2012223941A Expired - Fee Related JP5349666B2 (ja) 2003-12-23 2012-10-09 バイアス回路を一体化した金属酸化膜半導体デバイス

Country Status (3)

Country Link
US (1) US6956437B2 (enExample)
EP (1) EP1548536B1 (enExample)
JP (2) JP5385496B2 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005143079A (ja) * 2003-10-14 2005-06-02 Matsushita Electric Ind Co Ltd 高周波電力増幅器
JP4026603B2 (ja) * 2004-02-16 2007-12-26 ソニー株式会社 バイアス電圧供給回路および高周波増幅回路
US6900650B1 (en) 2004-03-01 2005-05-31 Transmeta Corporation System and method for controlling temperature during burn-in
US7248988B2 (en) * 2004-03-01 2007-07-24 Transmeta Corporation System and method for reducing temperature variation during burn in
US6897671B1 (en) * 2004-03-01 2005-05-24 Transmeta Corporation System and method for reducing heat dissipation during burn-in
CN100407572C (zh) * 2004-08-02 2008-07-30 阎跃军 场效应管偏置电路
JP4585337B2 (ja) * 2005-03-14 2010-11-24 株式会社エヌ・ティ・ティ・ドコモ バイアス回路
US7961470B2 (en) * 2006-07-19 2011-06-14 Infineon Technologies Ag Power amplifier
US7839217B2 (en) * 2007-12-11 2010-11-23 Hitachi Metals, Ltd. High-frequency amplifier, high-frequency module, and mobile wireless apparatus using the same
JP5267321B2 (ja) * 2009-05-18 2013-08-21 富士通株式会社 増幅器、送信装置および利得補償方法
US8849643B2 (en) * 2011-05-13 2014-09-30 International Business Machines Corporation Table-lookup-based models for yield analysis acceleration
US9143204B2 (en) * 2011-06-17 2015-09-22 Tensorcom, Inc. Direct coupled biasing circuit for high frequency applications
JP6168349B2 (ja) * 2013-06-05 2017-07-26 株式会社村田製作所 電力増幅器および無線通信装置
US11201595B2 (en) * 2015-11-24 2021-12-14 Skyworks Solutions, Inc. Cascode power amplifier with switchable output matching network
US10103691B2 (en) * 2016-01-27 2018-10-16 Mediatek Inc. Power amplifier system and associated bias circuit
US10613560B2 (en) * 2016-08-05 2020-04-07 Mediatek Inc. Buffer stage and control circuit
US10461705B2 (en) 2017-03-27 2019-10-29 Skyworks Solutions, Inc. Apparatus and methods for oscillation suppression of cascode power amplifiers
KR102128404B1 (ko) * 2018-08-13 2020-06-30 베렉스주식회사 임피던스 조절이 가능한 mmic 증폭기의 바이어스 회로
CN109634336B (zh) * 2018-11-07 2020-11-03 广东核电合营有限公司 一种微分求和电路和用电设备
CN110661501B (zh) * 2019-08-29 2021-09-24 电子科技大学 一种用于功率放大器静态点设置的自动锁定电路
US10990117B2 (en) * 2019-09-05 2021-04-27 Qualcomm Incorporated P-type metal-oxide-semiconductor (PMOS) low drop-out (LDO) regulator
US11509269B2 (en) 2020-08-17 2022-11-22 Qualcomm Incorporated Radio frequency (RF) amplifier bias circuit

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283942A (ja) * 1993-03-29 1994-10-07 Sony Corp 化合物半導体より成る電界効果トランジスタのバイアス安定化回路
US5394026A (en) * 1993-02-02 1995-02-28 Motorola Inc. Substrate bias generating circuit
US5748030A (en) * 1996-08-19 1998-05-05 Motorola, Inc. Bias generator providing process and temperature invariant MOSFET transconductance
JP3922773B2 (ja) * 1997-11-27 2007-05-30 三菱電機株式会社 電力増幅器
JP2000209038A (ja) * 1998-11-12 2000-07-28 Hitachi Ltd 高周波電力増幅装置および無線通信機
SE516012C2 (sv) * 1999-01-25 2001-11-05 Ericsson Telefon Ab L M Styreförspänningsanordning
JP2000332124A (ja) * 1999-03-18 2000-11-30 Toshiba Corp 半導体装置
WO2002003544A1 (en) * 2000-06-30 2002-01-10 Mitsubishi Denki Kabushiki Kaisha High-frequency amplifier
JP3631426B2 (ja) * 2000-09-25 2005-03-23 株式会社東芝 高出力増幅器
JP2002171138A (ja) * 2000-12-01 2002-06-14 Nec Corp マイクロ波電力増幅器
JP3751894B2 (ja) * 2001-03-05 2006-03-01 株式会社東芝 高周波電力増幅器及びその制御回路
FR2825806B1 (fr) * 2001-06-08 2003-09-12 St Microelectronics Sa Circuit de polarisation a point de fonctionnement stable en tension et en temperature
US6492874B1 (en) * 2001-07-30 2002-12-10 Motorola, Inc. Active bias circuit
US6417735B1 (en) * 2001-12-07 2002-07-09 Koninklijke Philips Electronics N.V. Amplifier with bias compensation using a current mirror circuit
JP2003188653A (ja) * 2001-12-20 2003-07-04 Hitachi Ltd 無線通信用電子部品および通信用半導体集積回路
US6879214B2 (en) * 2002-09-20 2005-04-12 Triquint Semiconductor, Inc. Bias circuit with controlled temperature dependence
US6774724B2 (en) * 2002-11-21 2004-08-10 Motorola, Inc. Radio frequency power amplifier active self-bias compensation circuit

Also Published As

Publication number Publication date
JP5349666B2 (ja) 2013-11-20
JP2013009440A (ja) 2013-01-10
EP1548536B1 (en) 2016-04-27
US20050134359A1 (en) 2005-06-23
US6956437B2 (en) 2005-10-18
EP1548536A1 (en) 2005-06-29
JP2005184838A (ja) 2005-07-07

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