JP5373045B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
- Publication number
- JP5373045B2 JP5373045B2 JP2011275221A JP2011275221A JP5373045B2 JP 5373045 B2 JP5373045 B2 JP 5373045B2 JP 2011275221 A JP2011275221 A JP 2011275221A JP 2011275221 A JP2011275221 A JP 2011275221A JP 5373045 B2 JP5373045 B2 JP 5373045B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type layer
- type
- photoelectric conversion
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 93
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 94
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 84
- 238000010248 power generation Methods 0.000 claims abstract description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000002019 doping agent Substances 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 description 368
- 239000010408 film Substances 0.000 description 95
- 239000000758 substrate Substances 0.000 description 42
- 230000015572 biosynthetic process Effects 0.000 description 41
- 239000007789 gas Substances 0.000 description 40
- 230000000052 comparative effect Effects 0.000 description 35
- 239000012895 dilution Substances 0.000 description 18
- 238000010790 dilution Methods 0.000 description 18
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 239000001257 hydrogen Substances 0.000 description 15
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 14
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 14
- 229910000077 silane Inorganic materials 0.000 description 14
- 150000002431 hydrogen Chemical class 0.000 description 13
- 230000001965 increasing effect Effects 0.000 description 12
- 238000000059 patterning Methods 0.000 description 11
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- YDLQKLWVKKFPII-UHFFFAOYSA-N timiperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCC(N2C(NC3=CC=CC=C32)=S)CC1 YDLQKLWVKKFPII-UHFFFAOYSA-N 0.000 description 1
- 229950000809 timiperone Drugs 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011275221A JP5373045B2 (ja) | 2011-12-16 | 2011-12-16 | 光電変換装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011275221A JP5373045B2 (ja) | 2011-12-16 | 2011-12-16 | 光電変換装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009283877A Division JP4940290B2 (ja) | 2009-12-15 | 2009-12-15 | 光電変換装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012060166A JP2012060166A (ja) | 2012-03-22 |
| JP2012060166A5 JP2012060166A5 (enrdf_load_stackoverflow) | 2012-12-13 |
| JP5373045B2 true JP5373045B2 (ja) | 2013-12-18 |
Family
ID=46056800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011275221A Expired - Fee Related JP5373045B2 (ja) | 2011-12-16 | 2011-12-16 | 光電変換装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5373045B2 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6158153B2 (ja) * | 2014-09-19 | 2017-07-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000077694A (ja) * | 1998-06-16 | 2000-03-14 | Canon Inc | 光起電力素子および太陽電池モジュ―ル |
| JP2003158276A (ja) * | 2001-11-21 | 2003-05-30 | Mitsubishi Heavy Ind Ltd | 微結晶シリコン太陽電池及びその製造方法 |
| JP2003188400A (ja) * | 2001-12-20 | 2003-07-04 | Mitsubishi Heavy Ind Ltd | 結晶性ＳｉＣ膜の製造方法、結晶性ＳｉＣ膜及び太陽電池 |
| JP3978121B2 (ja) * | 2002-11-27 | 2007-09-19 | 三菱重工業株式会社 | 薄膜太陽電池の製造方法 |
| JP2004335823A (ja) * | 2003-05-09 | 2004-11-25 | Canon Inc | 光起電力素子及び光起電力素子の形成方法 |
| US7671271B2 (en) * | 2006-03-08 | 2010-03-02 | National Science And Technology Dev. Agency | Thin film solar cell and its fabrication process |
| JP2008283075A (ja) * | 2007-05-11 | 2008-11-20 | Kaneka Corp | 光電変換装置の製造方法 |
-
2011
- 2011-12-16 JP JP2011275221A patent/JP5373045B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012060166A (ja) | 2012-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4940290B2 (ja) | 光電変換装置及びその製造方法 | |
| JP4902779B2 (ja) | 光電変換装置及びその製造方法 | |
| JP4767365B2 (ja) | 薄膜太陽電池及びその製造方法 | |
| JP2010283161A (ja) | 太陽電池及びその製造方法 | |
| JP5232362B2 (ja) | 集積化薄膜光電変換装置の製造方法および、その製造方法で得られうる集積化薄膜光電変換装置。 | |
| WO2010023991A1 (ja) | 光電変換装置の製造方法、光電変換装置、及び光電変換装置の製造システム | |
| WO2010050035A1 (ja) | 光電変換装置の製造方法 | |
| JP4712127B2 (ja) | 太陽電池の製造方法及び製造装置 | |
| JP2008283075A (ja) | 光電変換装置の製造方法 | |
| JP2011014619A (ja) | 太陽電池及びその製造方法 | |
| JP5373045B2 (ja) | 光電変換装置 | |
| JP2011014618A (ja) | 太陽電池及びその製造方法 | |
| JP2011060811A (ja) | 太陽電池モジュール及びその製造方法 | |
| JP2010283162A (ja) | 太陽電池及びその製造方法 | |
| WO2011105166A1 (ja) | 光電変換モジュール及びその製造方法 | |
| JP4875566B2 (ja) | 光電変換装置の製造方法 | |
| US20100307573A1 (en) | Solar cell and manufacturing method thereof | |
| JP2011216586A (ja) | 積層型光電変換装置および積層型光電変換装置の製造方法 | |
| JP2011077220A (ja) | 太陽電池 | |
| JP2010283159A (ja) | 太陽電池及びその製造方法 | |
| WO2010146846A1 (ja) | 光電変換装置及び光電変換装置の製造方法 | |
| JP2010283160A (ja) | 太陽電池及びその製造方法 | |
| JP2011014617A (ja) | 太陽電池及びその製造方法 | |
| WO2006049003A1 (ja) | 薄膜光電変換装置の製造方法 | |
| JPWO2012081656A1 (ja) | 光電変換装置及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121025 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121025 |
|
| TRDD | Decision of grant or rejection written | ||
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130814 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130820 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130918 |
|
| LAPS | Cancellation because of no payment of annual fees |