JP5363767B2 - フォトマスクの製造方法、パターン転写方法及びデータベース - Google Patents

フォトマスクの製造方法、パターン転写方法及びデータベース Download PDF

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Publication number
JP5363767B2
JP5363767B2 JP2008190353A JP2008190353A JP5363767B2 JP 5363767 B2 JP5363767 B2 JP 5363767B2 JP 2008190353 A JP2008190353 A JP 2008190353A JP 2008190353 A JP2008190353 A JP 2008190353A JP 5363767 B2 JP5363767 B2 JP 5363767B2
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Japan
Prior art keywords
semi
light
pattern
film
photomask
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JP2008190353A
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Japanese (ja)
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JP2009048186A (ja
JP2009048186A5 (enExample
Inventor
光一郎 吉田
和久 井村
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Hoya Corp
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Hoya Corp
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Priority to JP2008190353A priority Critical patent/JP5363767B2/ja
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Publication of JP2009048186A5 publication Critical patent/JP2009048186A5/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G03F7/70666—Aerial image, i.e. measuring the image of the patterned exposure light at the image plane of the projection system

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Thin Film Transistor (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2008190353A 2007-07-23 2008-07-23 フォトマスクの製造方法、パターン転写方法及びデータベース Active JP5363767B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008190353A JP5363767B2 (ja) 2007-07-23 2008-07-23 フォトマスクの製造方法、パターン転写方法及びデータベース

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007191487 2007-07-23
JP2007191487 2007-07-23
JP2008190353A JP5363767B2 (ja) 2007-07-23 2008-07-23 フォトマスクの製造方法、パターン転写方法及びデータベース

Publications (3)

Publication Number Publication Date
JP2009048186A JP2009048186A (ja) 2009-03-05
JP2009048186A5 JP2009048186A5 (enExample) 2011-08-11
JP5363767B2 true JP5363767B2 (ja) 2013-12-11

Family

ID=40462633

Family Applications (1)

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JP2008190353A Active JP5363767B2 (ja) 2007-07-23 2008-07-23 フォトマスクの製造方法、パターン転写方法及びデータベース

Country Status (4)

Country Link
JP (1) JP5363767B2 (enExample)
KR (1) KR101071454B1 (enExample)
CN (1) CN101382729B (enExample)
TW (1) TWI446105B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI428688B (zh) * 2009-07-29 2014-03-01 Hoya Corp Method for manufacturing multi - modal mask and pattern transfer method
JP2012047732A (ja) * 2010-07-30 2012-03-08 Hoya Corp 透過率測定装置、フォトマスクの透過率検査装置、透過率検査方法、フォトマスク製造方法、パターン転写方法、フォトマスク製品
JP5866912B2 (ja) * 2011-09-16 2016-02-24 凸版印刷株式会社 パターンの描画条件導出方法及びパターン描画装置
CN102944971B (zh) * 2012-11-21 2015-03-18 京东方科技集团股份有限公司 掩膜版及光刻材料的曝光检测方法
CN105988285B (zh) * 2015-01-30 2019-09-27 中芯国际集成电路制造(上海)有限公司 测试掩模版以及测试方法
CN104765245A (zh) * 2015-04-10 2015-07-08 深圳市华星光电技术有限公司 一种灰色调掩膜及其制作方法
KR102687968B1 (ko) * 2018-11-06 2024-07-25 삼성전자주식회사 반도체 소자의 제조 방법
CN111352294B (zh) * 2020-03-23 2021-10-22 昆山国显光电有限公司 掩模版、显示面板及掩模版的制备方法
JP6993530B1 (ja) 2020-12-25 2022-01-13 株式会社エスケーエレクトロニクス フォトマスク、フォトマスクの製造方法、表示装置の製造方法
CN114488703B (zh) * 2021-12-10 2024-04-12 武汉新芯集成电路制造有限公司 刻蚀方案的确定方法、测试掩模板以及刻蚀系统

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04328548A (ja) * 1991-04-26 1992-11-17 Nikon Corp フォトマスクの検査方法および装置
JP2530081B2 (ja) * 1992-01-09 1996-09-04 株式会社東芝 マスク検査装置
JP3085264B2 (ja) * 1997-11-10 2000-09-04 日本電気株式会社 フォトマスクならびにその製造方法
JP2000181048A (ja) * 1998-12-16 2000-06-30 Sharp Corp フォトマスクおよびその製造方法、並びにそれを用いた露光方法
JP2002174604A (ja) * 2000-09-29 2002-06-21 Hoya Corp グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP2003043665A (ja) * 2001-08-02 2003-02-13 Sony Corp フォトマスクの製造方法
JP4064144B2 (ja) * 2002-04-16 2008-03-19 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP4021235B2 (ja) * 2002-04-16 2007-12-12 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法及び欠陥検査装置、並びにフォトマスクの欠陥検査方法及び欠陥検査装置
JP3993125B2 (ja) * 2003-04-01 2007-10-17 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法
JP4294359B2 (ja) * 2003-04-08 2009-07-08 Ｈｏｙａ株式会社 グレートーンマスクの欠陥修正方法
JP3875648B2 (ja) * 2003-04-08 2007-01-31 Ｈｏｙａ株式会社 グレートーンマスクの欠陥検査方法
JP4393290B2 (ja) * 2003-06-30 2010-01-06 Ｈｏｙａ株式会社 グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法
US7524593B2 (en) * 2005-08-12 2009-04-28 Semiconductor Energy Laboratory Co., Ltd. Exposure mask
CN101268417A (zh) * 2005-09-21 2008-09-17 大日本印刷株式会社 具有灰度的光掩模及其制造方法
KR101082715B1 (ko) * 2005-12-26 2011-11-15 호야 가부시키가이샤 마스크 블랭크 및 포토마스크
JP5064116B2 (ja) * 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法

Also Published As

Publication number Publication date
JP2009048186A (ja) 2009-03-05
CN101382729B (zh) 2011-12-07
KR20090010907A (ko) 2009-01-30
TWI446105B (zh) 2014-07-21
CN101382729A (zh) 2009-03-11
KR101071454B1 (ko) 2011-10-10
TW200912520A (en) 2009-03-16

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