JP5361176B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5361176B2
JP5361176B2 JP2007313290A JP2007313290A JP5361176B2 JP 5361176 B2 JP5361176 B2 JP 5361176B2 JP 2007313290 A JP2007313290 A JP 2007313290A JP 2007313290 A JP2007313290 A JP 2007313290A JP 5361176 B2 JP5361176 B2 JP 5361176B2
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JP
Japan
Prior art keywords
circuit
potential
terminal
secondary battery
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007313290A
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English (en)
Japanese (ja)
Other versions
JP2008172997A (ja
JP2008172997A5 (enExample
Inventor
雅典 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007313290A priority Critical patent/JP5361176B2/ja
Publication of JP2008172997A publication Critical patent/JP2008172997A/ja
Publication of JP2008172997A5 publication Critical patent/JP2008172997A5/ja
Application granted granted Critical
Publication of JP5361176B2 publication Critical patent/JP5361176B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2007313290A 2006-12-13 2007-12-04 半導体装置 Expired - Fee Related JP5361176B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007313290A JP5361176B2 (ja) 2006-12-13 2007-12-04 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006335643 2006-12-13
JP2006335643 2006-12-13
JP2007313290A JP5361176B2 (ja) 2006-12-13 2007-12-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2008172997A JP2008172997A (ja) 2008-07-24
JP2008172997A5 JP2008172997A5 (enExample) 2011-01-13
JP5361176B2 true JP5361176B2 (ja) 2013-12-04

Family

ID=39526403

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007313290A Expired - Fee Related JP5361176B2 (ja) 2006-12-13 2007-12-04 半導体装置

Country Status (2)

Country Link
US (2) US7974111B2 (enExample)
JP (1) JP5361176B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267368A (ja) * 2009-04-17 2010-11-25 Semiconductor Energy Lab Co Ltd 半導体記憶装置
US9800077B2 (en) * 2013-11-26 2017-10-24 Mitsubishi Electric Corporation DC power-supply device and refrigeration-cycle application device including the same

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334119A (ja) * 1993-02-17 1994-12-02 Seiko Instr Inc 昇圧用半導体集積回路及びその半導体集積回路を用いた電子機器
JP2708374B2 (ja) * 1994-07-26 1998-02-04 インターナショナル・ビジネス・マシーンズ・コーポレイション コンピュータ用バッテリ接続装置及びバッテリの切換方法
JPH09219932A (ja) * 1996-02-13 1997-08-19 Alps Electric Co Ltd ワイヤレス機器の充電装置
JP3394133B2 (ja) * 1996-06-12 2003-04-07 沖電気工業株式会社 昇圧回路
JP3109595B2 (ja) * 1998-08-28 2000-11-20 日本電気株式会社 受信ダイバーシティ制御方法およびダイバーシティ受信機
JP3614747B2 (ja) * 2000-03-07 2005-01-26 Ｎｅｃエレクトロニクス株式会社 昇圧回路、それを搭載したｉｃカード及びそれを搭載した電子機器
US6888399B2 (en) * 2002-02-08 2005-05-03 Rohm Co., Ltd. Semiconductor device equipped with a voltage step-up circuit
JP3830414B2 (ja) 2002-04-02 2006-10-04 ローム株式会社 昇圧回路を備えた半導体装置
US7494066B2 (en) * 2003-12-19 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
SG143030A1 (en) * 2004-01-30 2008-06-27 Agency Science Tech & Res Radio frequency identification and communication device
US7256642B2 (en) * 2004-03-19 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. Booster circuit, semiconductor device, and electronic apparatus
JP3972916B2 (ja) * 2004-04-08 2007-09-05 セイコーエプソン株式会社 昇圧回路及び半導体集積回路
JP4519713B2 (ja) * 2004-06-17 2010-08-04 株式会社東芝 整流回路とこれを用いた無線通信装置
JP2006049341A (ja) * 2004-07-30 2006-02-16 Renesas Technology Corp 半導体装置およびその製造方法
JP2006109429A (ja) * 2004-09-09 2006-04-20 Semiconductor Energy Lab Co Ltd 無線チップ
WO2006028258A1 (en) 2004-09-09 2006-03-16 Semiconductor Energy Laboratory Co., Ltd. Wireless chip
JP4942998B2 (ja) * 2004-12-24 2012-05-30 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
WO2006068286A1 (en) 2004-12-24 2006-06-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4873868B2 (ja) * 2005-02-09 2012-02-08 ルネサスエレクトロニクス株式会社 パッシブ型ｒｆｉｄ用の半導体装置、ｉｃタグ、ｉｃタグの制御方法及び通信方法
US20060267769A1 (en) * 2005-05-30 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Terminal device and communication system
CN101385039B (zh) * 2006-03-15 2012-03-21 株式会社半导体能源研究所 半导体器件
US9022293B2 (en) * 2006-08-31 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and power receiving device
JP5179849B2 (ja) * 2006-12-28 2013-04-10 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
US7974111B2 (en) 2011-07-05
US20110241441A1 (en) 2011-10-06
US8488347B2 (en) 2013-07-16
JP2008172997A (ja) 2008-07-24
US20080143425A1 (en) 2008-06-19

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