JP5357710B2 - 基板処理方法，基板処理装置，プログラムを記録した記録媒体 - Google Patents

基板処理方法，基板処理装置，プログラムを記録した記録媒体 Download PDF

Info

Publication number
JP5357710B2
JP5357710B2 JP2009261018A JP2009261018A JP5357710B2 JP 5357710 B2 JP5357710 B2 JP 5357710B2 JP 2009261018 A JP2009261018 A JP 2009261018A JP 2009261018 A JP2009261018 A JP 2009261018A JP 5357710 B2 JP5357710 B2 JP 5357710B2
Authority
JP
Japan
Prior art keywords
gas
film
substrate
deposition step
chf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009261018A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011108782A5 (enExample
JP2011108782A (ja
Inventor
昌伸 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009261018A priority Critical patent/JP5357710B2/ja
Priority to US12/943,967 priority patent/US8524331B2/en
Publication of JP2011108782A publication Critical patent/JP2011108782A/ja
Publication of JP2011108782A5 publication Critical patent/JP2011108782A5/ja
Application granted granted Critical
Publication of JP5357710B2 publication Critical patent/JP5357710B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2009261018A 2009-11-16 2009-11-16 基板処理方法，基板処理装置，プログラムを記録した記録媒体 Expired - Fee Related JP5357710B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009261018A JP5357710B2 (ja) 2009-11-16 2009-11-16 基板処理方法，基板処理装置，プログラムを記録した記録媒体
US12/943,967 US8524331B2 (en) 2009-11-16 2010-11-11 Substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009261018A JP5357710B2 (ja) 2009-11-16 2009-11-16 基板処理方法，基板処理装置，プログラムを記録した記録媒体

Publications (3)

Publication Number Publication Date
JP2011108782A JP2011108782A (ja) 2011-06-02
JP2011108782A5 JP2011108782A5 (enExample) 2012-12-27
JP5357710B2 true JP5357710B2 (ja) 2013-12-04

Family

ID=44011469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009261018A Expired - Fee Related JP5357710B2 (ja) 2009-11-16 2009-11-16 基板処理方法，基板処理装置，プログラムを記録した記録媒体

Country Status (2)

Country Link
US (1) US8524331B2 (enExample)
JP (1) JP5357710B2 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2251452B1 (en) 2009-05-13 2018-07-18 SiO2 Medical Products, Inc. Pecvd apparatus for vessel coating
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
KR20130004830A (ko) * 2011-07-04 2013-01-14 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
US9554968B2 (en) 2013-03-11 2017-01-31 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging
EP2776603B1 (en) 2011-11-11 2019-03-06 SiO2 Medical Products, Inc. PASSIVATION, pH PROTECTIVE OR LUBRICITY COATING FOR PHARMACEUTICAL PACKAGE, COATING PROCESS AND APPARATUS
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
CA2887352A1 (en) 2012-05-09 2013-11-14 Sio2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
WO2014071061A1 (en) 2012-11-01 2014-05-08 Sio2 Medical Products, Inc. Coating inspection method
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
CN103832965B (zh) * 2012-11-23 2017-02-08 北京北方微电子基地设备工艺研究中心有限责任公司 基片刻蚀方法
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
US10201660B2 (en) 2012-11-30 2019-02-12 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
US20160017490A1 (en) 2013-03-15 2016-01-21 Sio2 Medical Products, Inc. Coating method
EP3122917B1 (en) 2014-03-28 2020-05-06 SiO2 Medical Products, Inc. Antistatic coatings for plastic vessels
CN116982977A (zh) 2015-08-18 2023-11-03 Sio2医药产品公司 具有低氧气传输速率的药物和其他包装
JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
US12480212B2 (en) * 2022-03-30 2025-11-25 Applied Materials, Inc. Chemical-dose substrate deposition monitoring
US12333700B2 (en) 2022-03-30 2025-06-17 Applied Materials, Inc. Chemical-dose substrate deposition monitoring

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5290383A (en) * 1991-03-24 1994-03-01 Tokyo Electron Limited Plasma-process system with improved end-point detecting scheme
JP2001267310A (ja) * 2000-03-17 2001-09-28 Tokyo Electron Ltd プラズマ成膜方法及びその装置
KR100361585B1 (ko) * 2000-11-11 2002-11-22 한국과학기술연구원 트리플루오로메탄(ｒ２３)과테트라플루오로에틸렌(ｔｆｅ)의 열분해 반응에 의한헥사플루오로프로필렌(ｈｅｆ)의 제조방법
US7169695B2 (en) 2002-10-11 2007-01-30 Lam Research Corporation Method for forming a dual damascene structure
JP2004152977A (ja) * 2002-10-30 2004-05-27 Renesas Technology Corp 半導体記憶装置
JP2004311706A (ja) * 2003-04-07 2004-11-04 Toshiba Corp 半導体装置及びその製造方法
JP4422624B2 (ja) * 2004-03-03 2010-02-24 日本航空電子工業株式会社 微小可動デバイス及びその作製方法
JP2006156591A (ja) * 2004-11-26 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US7271107B2 (en) * 2005-02-03 2007-09-18 Lam Research Corporation Reduction of feature critical dimensions using multiple masks
JP2007194284A (ja) * 2006-01-17 2007-08-02 Tokyo Electron Ltd プラズマ処理方法、プラズマ処理装置、及び記憶媒体
JP4946138B2 (ja) * 2006-03-31 2012-06-06 東京エレクトロン株式会社 エッチング方法
US7309646B1 (en) * 2006-10-10 2007-12-18 Lam Research Corporation De-fluoridation process
JP5161503B2 (ja) * 2007-07-09 2013-03-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5276926B2 (ja) * 2008-08-25 2013-08-28 ラピスセミコンダクタ株式会社 コンタクトホール側壁の抵抗値測定方法
JP5128421B2 (ja) * 2008-09-04 2013-01-23 東京エレクトロン株式会社 プラズマ処理方法およびレジストパターンの改質方法
JP5191857B2 (ja) * 2008-10-08 2013-05-08 東京エレクトロン株式会社 基板処理方法，基板処理装置，記憶媒体
JP5180121B2 (ja) * 2009-02-20 2013-04-10 東京エレクトロン株式会社 基板処理方法
US8197915B2 (en) * 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature

Also Published As

Publication number Publication date
US20110117288A1 (en) 2011-05-19
US8524331B2 (en) 2013-09-03
JP2011108782A (ja) 2011-06-02

Similar Documents

Publication Publication Date Title
JP5357710B2 (ja) 基板処理方法，基板処理装置，プログラムを記録した記録媒体
US9324569B2 (en) Plasma etching method and plasma etching apparatus
JP5530088B2 (ja) プラズマエッチング方法及びプラズマエッチング装置
TWI525694B (zh) Chamber cleaning method
US8679358B2 (en) Plasma etching method and computer-readable storage medium
JP5642001B2 (ja) プラズマエッチング方法
JP5442403B2 (ja) 基板処理装置及びそのクリーニング方法並びにプログラムを記録した記録媒体
KR101858324B1 (ko) 플라즈마 에칭 방법
US12051595B2 (en) Plasma processing method and plasma processing apparatus
US10651077B2 (en) Etching method
JP2008078515A (ja) プラズマ処理方法
US20240006168A1 (en) Substrate processing method, component processing method, and substrate processing apparatus
KR101068014B1 (ko) 플라즈마 에칭 방법, 플라즈마 에칭 장치 및 컴퓨터 기억 매체
JP5804978B2 (ja) プラズマエッチング方法及びコンピュータ記録媒体
US11094551B2 (en) Plasma processing method and plasma processing apparatus
JP7524003B2 (ja) エッチング方法及びプラズマ処理装置
US7655572B2 (en) Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, control program and computer storage medium
TWI903021B (zh) 基板處理方法、零件處理方法及基板處理裝置
US20070218691A1 (en) Plasma etching method, plasma etching apparatus and computer-readable storage medium
JP2007251044A (ja) プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
JP2015201583A (ja) プラズマエッチング方法およびプラズマエッチング装置
JP2015106587A (ja) 静電チャックのコーティング方法及びプラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121114

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20121114

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130709

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130716

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130807

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130822

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130830

R150 Certificate of patent or registration of utility model

Ref document number: 5357710

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees