JP5357021B2 - 酸化物の除去速度向上のためのガリウム及びクロムイオン - Google Patents

酸化物の除去速度向上のためのガリウム及びクロムイオン Download PDF

Info

Publication number
JP5357021B2
JP5357021B2 JP2009520758A JP2009520758A JP5357021B2 JP 5357021 B2 JP5357021 B2 JP 5357021B2 JP 2009520758 A JP2009520758 A JP 2009520758A JP 2009520758 A JP2009520758 A JP 2009520758A JP 5357021 B2 JP5357021 B2 JP 5357021B2
Authority
JP
Japan
Prior art keywords
polishing composition
substrate
chemical mechanical
mechanical polishing
silica
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009520758A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009545134A5 (enExample
JP2009545134A (ja
Inventor
グルンビン，スティーブン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2009545134A publication Critical patent/JP2009545134A/ja
Publication of JP2009545134A5 publication Critical patent/JP2009545134A5/ja
Application granted granted Critical
Publication of JP5357021B2 publication Critical patent/JP5357021B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2009520758A 2006-07-21 2007-07-10 酸化物の除去速度向上のためのガリウム及びクロムイオン Expired - Fee Related JP5357021B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/491,055 2006-07-21
US11/491,055 US7501346B2 (en) 2006-07-21 2006-07-21 Gallium and chromium ions for oxide rate enhancement
PCT/US2007/015714 WO2008013668A1 (en) 2006-07-21 2007-07-10 Gallium and chromium ions for oxide removal rate enhancement

Publications (3)

Publication Number Publication Date
JP2009545134A JP2009545134A (ja) 2009-12-17
JP2009545134A5 JP2009545134A5 (enExample) 2010-08-26
JP5357021B2 true JP5357021B2 (ja) 2013-12-04

Family

ID=38971976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009520758A Expired - Fee Related JP5357021B2 (ja) 2006-07-21 2007-07-10 酸化物の除去速度向上のためのガリウム及びクロムイオン

Country Status (9)

Country Link
US (1) US7501346B2 (enExample)
EP (1) EP2069451B1 (enExample)
JP (1) JP5357021B2 (enExample)
KR (1) KR101265384B1 (enExample)
CN (1) CN101490204B (enExample)
IL (1) IL196221A (enExample)
MY (1) MY145618A (enExample)
TW (1) TWI393771B (enExample)
WO (1) WO2008013668A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364959B2 (ja) * 2009-03-27 2013-12-11 国立大学法人大阪大学 研磨方法及び研磨装置
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
JPH0781132B2 (ja) * 1990-08-29 1995-08-30 株式会社フジミインコーポレーテッド 研磨剤組成物
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US20020039839A1 (en) * 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
US20020025762A1 (en) * 2000-02-16 2002-02-28 Qiuliang Luo Biocides for polishing slurries
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP4954398B2 (ja) * 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP2003142435A (ja) * 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP2004327952A (ja) * 2003-03-03 2004-11-18 Fujimi Inc 研磨用組成物

Also Published As

Publication number Publication date
EP2069451A1 (en) 2009-06-17
WO2008013668A1 (en) 2008-01-31
MY145618A (en) 2012-03-15
KR20090030316A (ko) 2009-03-24
US7501346B2 (en) 2009-03-10
IL196221A0 (en) 2009-09-22
JP2009545134A (ja) 2009-12-17
KR101265384B1 (ko) 2013-05-20
EP2069451B1 (en) 2015-06-24
CN101490204B (zh) 2012-12-26
IL196221A (en) 2011-12-29
EP2069451A4 (en) 2011-04-27
US20080020577A1 (en) 2008-01-24
TW200808947A (en) 2008-02-16
TWI393771B (zh) 2013-04-21
CN101490204A (zh) 2009-07-22

Similar Documents

Publication Publication Date Title
JP6392913B2 (ja) 研磨組成物およびアミノシランを用いて処理された研削剤粒子の使用方法
JP5519507B2 (ja) アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法
CN101389722B (zh) 用于抛光氮化硅的组合物及方法
JP5596344B2 (ja) コロイダルシリカを利用した酸化ケイ素研磨方法
WO2009104517A1 (ja) 化学機械研磨用水系分散体および化学機械研磨方法
KR20080108598A (ko) 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트
JP2009545159A (ja) 除去速度の高い誘電体膜のためのｃｍｐ組成物
KR102322420B1 (ko) 저결점의 화학적 기계적 폴리싱 조성물
JP5357021B2 (ja) 酸化物の除去速度向上のためのガリウム及びクロムイオン
CN101263209B (zh) 无研磨剂的抛光系统

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100706

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100706

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120712

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120717

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20121016

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20121023

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130111

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130730

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130829

R150 Certificate of patent or registration of utility model

Ref document number: 5357021

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees