KR101265384B1 - 산화물 제거율 향상을 위한 갈륨 및 크롬 이온 - Google Patents

산화물 제거율 향상을 위한 갈륨 및 크롬 이온 Download PDF

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Publication number
KR101265384B1
KR101265384B1 KR1020097001140A KR20097001140A KR101265384B1 KR 101265384 B1 KR101265384 B1 KR 101265384B1 KR 1020097001140 A KR1020097001140 A KR 1020097001140A KR 20097001140 A KR20097001140 A KR 20097001140A KR 101265384 B1 KR101265384 B1 KR 101265384B1
Authority
KR
South Korea
Prior art keywords
polishing composition
substrate
silica
chromium
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020097001140A
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English (en)
Korean (ko)
Other versions
KR20090030316A (ko
Inventor
스티븐 그럼빈
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20090030316A publication Critical patent/KR20090030316A/ko
Application granted granted Critical
Publication of KR101265384B1 publication Critical patent/KR101265384B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020097001140A 2006-07-21 2007-07-10 산화물 제거율 향상을 위한 갈륨 및 크롬 이온 Expired - Fee Related KR101265384B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/491,055 2006-07-21
US11/491,055 US7501346B2 (en) 2006-07-21 2006-07-21 Gallium and chromium ions for oxide rate enhancement

Publications (2)

Publication Number Publication Date
KR20090030316A KR20090030316A (ko) 2009-03-24
KR101265384B1 true KR101265384B1 (ko) 2013-05-20

Family

ID=38971976

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001140A Expired - Fee Related KR101265384B1 (ko) 2006-07-21 2007-07-10 산화물 제거율 향상을 위한 갈륨 및 크롬 이온

Country Status (9)

Country Link
US (1) US7501346B2 (enExample)
EP (1) EP2069451B1 (enExample)
JP (1) JP5357021B2 (enExample)
KR (1) KR101265384B1 (enExample)
CN (1) CN101490204B (enExample)
IL (1) IL196221A (enExample)
MY (1) MY145618A (enExample)
TW (1) TWI393771B (enExample)
WO (1) WO2008013668A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364959B2 (ja) * 2009-03-27 2013-12-11 国立大学法人大阪大学 研磨方法及び研磨装置
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000351957A (ja) 1999-04-22 2000-12-19 Clariant Fr Sa 低誘電率を有するポリマーに基づいた絶縁材料における層の機械化学的研磨のための組成物

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
JPH0781132B2 (ja) * 1990-08-29 1995-08-30 株式会社フジミインコーポレーテッド 研磨剤組成物
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US20020039839A1 (en) * 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
US20020025762A1 (en) * 2000-02-16 2002-02-28 Qiuliang Luo Biocides for polishing slurries
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP4954398B2 (ja) * 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP2003142435A (ja) * 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP2004327952A (ja) * 2003-03-03 2004-11-18 Fujimi Inc 研磨用組成物

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000351957A (ja) 1999-04-22 2000-12-19 Clariant Fr Sa 低誘電率を有するポリマーに基づいた絶縁材料における層の機械化学的研磨のための組成物

Also Published As

Publication number Publication date
EP2069451A1 (en) 2009-06-17
WO2008013668A1 (en) 2008-01-31
MY145618A (en) 2012-03-15
KR20090030316A (ko) 2009-03-24
US7501346B2 (en) 2009-03-10
IL196221A0 (en) 2009-09-22
JP5357021B2 (ja) 2013-12-04
JP2009545134A (ja) 2009-12-17
EP2069451B1 (en) 2015-06-24
CN101490204B (zh) 2012-12-26
IL196221A (en) 2011-12-29
EP2069451A4 (en) 2011-04-27
US20080020577A1 (en) 2008-01-24
TW200808947A (en) 2008-02-16
TWI393771B (zh) 2013-04-21
CN101490204A (zh) 2009-07-22

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