CN101490204B - 用于提高氧化物移除速率的镓与铬离子 - Google Patents

用于提高氧化物移除速率的镓与铬离子 Download PDF

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Publication number
CN101490204B
CN101490204B CN2007800272644A CN200780027264A CN101490204B CN 101490204 B CN101490204 B CN 101490204B CN 2007800272644 A CN2007800272644 A CN 2007800272644A CN 200780027264 A CN200780027264 A CN 200780027264A CN 101490204 B CN101490204 B CN 101490204B
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CN
China
Prior art keywords
polishing composition
substrate
polishing
chromium
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800272644A
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English (en)
Chinese (zh)
Other versions
CN101490204A (zh
Inventor
斯蒂芬·格鲁姆比尼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
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Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of CN101490204A publication Critical patent/CN101490204A/zh
Application granted granted Critical
Publication of CN101490204B publication Critical patent/CN101490204B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CN2007800272644A 2006-07-21 2007-07-10 用于提高氧化物移除速率的镓与铬离子 Expired - Fee Related CN101490204B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/491,055 2006-07-21
US11/491,055 US7501346B2 (en) 2006-07-21 2006-07-21 Gallium and chromium ions for oxide rate enhancement
PCT/US2007/015714 WO2008013668A1 (en) 2006-07-21 2007-07-10 Gallium and chromium ions for oxide removal rate enhancement

Publications (2)

Publication Number Publication Date
CN101490204A CN101490204A (zh) 2009-07-22
CN101490204B true CN101490204B (zh) 2012-12-26

Family

ID=38971976

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800272644A Expired - Fee Related CN101490204B (zh) 2006-07-21 2007-07-10 用于提高氧化物移除速率的镓与铬离子

Country Status (9)

Country Link
US (1) US7501346B2 (enExample)
EP (1) EP2069451B1 (enExample)
JP (1) JP5357021B2 (enExample)
KR (1) KR101265384B1 (enExample)
CN (1) CN101490204B (enExample)
IL (1) IL196221A (enExample)
MY (1) MY145618A (enExample)
TW (1) TWI393771B (enExample)
WO (1) WO2008013668A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364959B2 (ja) * 2009-03-27 2013-12-11 国立大学法人大阪大学 研磨方法及び研磨装置
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
CN1407050A (zh) * 2001-08-09 2003-04-02 不二见株式会社 研磨用组合物及用它的研磨方法

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US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
JPH0781132B2 (ja) * 1990-08-29 1995-08-30 株式会社フジミインコーポレーテッド 研磨剤組成物
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
FR2792643B1 (fr) * 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US20020039839A1 (en) * 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
US20020025762A1 (en) * 2000-02-16 2002-02-28 Qiuliang Luo Biocides for polishing slurries
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
JP2003142435A (ja) * 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP4083528B2 (ja) * 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP2004327952A (ja) * 2003-03-03 2004-11-18 Fujimi Inc 研磨用組成物

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
CN1407050A (zh) * 2001-08-09 2003-04-02 不二见株式会社 研磨用组合物及用它的研磨方法

Also Published As

Publication number Publication date
EP2069451A1 (en) 2009-06-17
WO2008013668A1 (en) 2008-01-31
MY145618A (en) 2012-03-15
KR20090030316A (ko) 2009-03-24
US7501346B2 (en) 2009-03-10
IL196221A0 (en) 2009-09-22
JP5357021B2 (ja) 2013-12-04
JP2009545134A (ja) 2009-12-17
KR101265384B1 (ko) 2013-05-20
EP2069451B1 (en) 2015-06-24
IL196221A (en) 2011-12-29
EP2069451A4 (en) 2011-04-27
US20080020577A1 (en) 2008-01-24
TW200808947A (en) 2008-02-16
TWI393771B (zh) 2013-04-21
CN101490204A (zh) 2009-07-22

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Granted publication date: 20121226

Termination date: 20200710