JP5355545B2 - 金属箔 - Google Patents
金属箔 Download PDFInfo
- Publication number
- JP5355545B2 JP5355545B2 JP2010503347A JP2010503347A JP5355545B2 JP 5355545 B2 JP5355545 B2 JP 5355545B2 JP 2010503347 A JP2010503347 A JP 2010503347A JP 2010503347 A JP2010503347 A JP 2010503347A JP 5355545 B2 JP5355545 B2 JP 5355545B2
- Authority
- JP
- Japan
- Prior art keywords
- mass
- metal foil
- alloy
- epitaxial coating
- coating according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 28
- 239000002184 metal Substances 0.000 title claims abstract description 28
- 239000011888 foil Substances 0.000 title claims abstract description 22
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 239000000956 alloy Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 235000019260 propionic acid Nutrition 0.000 claims description 6
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 6
- 230000003068 static effect Effects 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000155 melt Substances 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 230000008018 melting Effects 0.000 claims 2
- 238000010313 vacuum arc remelting Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000007792 addition Methods 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12431—Foil or filament smaller than 6 mils
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Continuous Casting (AREA)
- Physical Vapour Deposition (AREA)
- Metal Rolling (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Electroplating Methods And Accessories (AREA)
- Wrappers (AREA)
Description
a=100−(d+e)
(d+e)≦50
b=0〜12
c=0〜12
d=(b+c)=0.01〜12
e=0〜49.9
でありかつ場合により含まれるわずかな製造技術による不純物を有する。
Ni 74〜90%
W 10〜26%
並びにAl及び/又はMg及び/又はBを
Al >0〜0.02%
Mg >0〜0.025%
B >0〜0.005%の含有率で
及び不可避な随伴元素 <0.5%の含有率で
有する金属箔により解決される。
Ni 80〜90% Ni 83〜88%
W 10〜20% W 12〜17%
である。
Ni 85〜87%
W 13〜15%
であることもできる。
Al 0.001〜0.02% Al 0.0001〜0.0006%
Mg 0.0001〜0.025% Mg 0.0001〜0.015%
B 0.0001〜0.005% B 0.0001〜0.002%
を有する。
Cr 最大0.05%
Fe <0.1%
Co 最大0.05%
C 最大0.04%
Cu <0.05%
Mn <0.05%
Mo 最大0.05%
Nb 最大0.01%
P <0.004%
O <0.005%
S <0.004%
Si 最大0.05%
N <0.005%
Ti <0.01%。
Cr <0.01%
Fe <0.05%
Co <0.05%
C <0.01%
Cu <0.03%
Mn <0.03%
Mo <0.03%
Nb <0.005%
P <0.003%
O <0.004%
S <0.0008%
Si <0.04%
N <0.004%
Ti <0.01%。
この方法は、固体の表面特性の特性決定を可能にする。Ni−W−ストリップの特性を測定するために、水又は水/プロピオン酸の1:1の比率の混合物が適している。使用した水はイオン交換体を介して精製し、5.0μScm-1より低い残留導電性を有するのが好ましい。このプロピオン酸は、99.5%の純度を有し、0.993〜0.995gcm-3の密度を有する。これは、特別な後処理を行わなかった。
Claims (9)
- Ni 80〜90質量%
W 10〜20質量%
Mg 0.0001〜0.015質量%
S <0.004質量%
を有する合金を有し、
前記合金中の下記の元素の含有率は、次の
Al >0 〜最大0.02質量%
B >0 〜最大0.005質量%
Fe <0.1質量%
Co 最大0.05質量%
C 最大0.04質量%
Cu <0.05質量%
Mn <0.05質量%
Mo 最大0.05質量%
Nb 最大0.01質量%
P <0.004質量%
O <0.005質量%
Cr 最大0.05質量%
Si 最大0.05質量%
N <0.005質量%
Ti <0.01質量%
により限定されるエピタキシャル被覆のための金属箔であって、前記合金は、真空誘導溶解により製造され、前記合金中に存在するMgは、前記合金の熱間形成を改善し、前記金属箔は、1トンを越える融液量で製造される、エピタキシャル被覆のための金属箔。 - 前記合金中でのNi及びWの質量割合は、
Ni 83〜88質量%
W 12〜17質量%
である、請求項1記載のエピタキシャル被覆のための金属箔。 - 前記合金中のNi及びWの質量割合は、
Ni 85〜87質量%
W 13〜15質量%
である、請求項1記載のエピタキシャル被覆のための金属箔。 - 前記合金中の以下の元素の含有率は、次の
Cr <0.01質量%
Fe <0.05質量%
Co <0.05質量%
C <0.01質量%
Cu <0.03質量%
Mn <0.03質量%
Mo <0.03質量%
Nb <0.005質量%
P <0.003質量%
O <0.004質量%
S <0.0008質量%
Si <0.04質量%
N <0.004質量%
Ti <0.01質量%
により限定される、請求項1記載のエピタキシャル被覆のための金属箔。 - 冷間変形率>90%で製造され、引き続き700〜1200℃の温度範囲でのアニーリング処理された、請求項1記載のエピタキシャル被覆のための金属箔。
- 前記箔の表面は、脱イオン水及びプロピオン酸の1:1の比率での混合物を用いて測定して静的接触角<80゜を有する、請求項1記載のエピタキシャル被覆のための金属箔。
- 前記箔の表面は、脱イオン水及びプロピオン酸の1:1の比率での混合物を用いて測定して静的接触角<75゜を有する、請求項1記載のエピタキシャル被覆のための金属箔。
- 前記箔の表面は、脱イオン水及びプロピオン酸の1:1の比率での混合物を用いて測定して静的接触角<70゜を有する、請求項1記載のエピタキシャル被覆のための金属箔。
- 前記合金を更に、真空誘導溶解の後に真空アーク再溶解により加工する、請求項1記載のエピタキシャル被覆のための金属箔。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007018408.7 | 2007-04-17 | ||
DE102007018408 | 2007-04-17 | ||
DE102008016222A DE102008016222B4 (de) | 2007-04-17 | 2008-03-27 | Metallfolie |
DE102008016222.1 | 2008-03-27 | ||
PCT/DE2008/000615 WO2008125091A2 (de) | 2007-04-17 | 2008-04-14 | Metallfolie |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010525156A JP2010525156A (ja) | 2010-07-22 |
JP5355545B2 true JP5355545B2 (ja) | 2013-11-27 |
Family
ID=39829578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010503347A Active JP5355545B2 (ja) | 2007-04-17 | 2008-04-14 | 金属箔 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20100059145A1 (ja) |
EP (1) | EP2137330B1 (ja) |
JP (1) | JP5355545B2 (ja) |
KR (1) | KR101234154B1 (ja) |
CN (1) | CN101680058B (ja) |
AT (1) | ATE524570T1 (ja) |
DE (1) | DE102008016222B4 (ja) |
RU (1) | RU2421535C1 (ja) |
WO (1) | WO2008125091A2 (ja) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011016180A1 (de) | 2011-04-05 | 2012-10-11 | Thyssenkrupp Vdm Gmbh | Verfahren zum Herstellen eines Substratbandes |
DE102011015961A1 (de) | 2011-04-04 | 2012-10-04 | Thyssenkrupp Vdm Gmbh | Verfahren zur Herstellung eines Substratbandes |
CN105209188B (zh) * | 2013-06-07 | 2017-10-13 | Vdm金属有限公司 | 制备金属箔的方法 |
EP3004408B1 (de) * | 2013-06-07 | 2017-08-09 | VDM Metals International GmbH | Verfahren zur herstellung einer metallfolie |
EP3265429B1 (en) | 2015-03-02 | 2019-09-11 | Basf Se | Nanoparticles for the use as pinning centers in superconductors |
US10233091B2 (en) | 2015-03-02 | 2019-03-19 | Basf Se | Process for producing crystalline tantalum oxide particles |
KR20170130489A (ko) | 2015-03-26 | 2017-11-28 | 바스프 에스이 | 고온 초전도체 전선의 제조 방법 |
CN104745880B (zh) * | 2015-04-14 | 2017-08-25 | 钢铁研究总院 | 一种高密度动能超高强度钨镍耐热合金及制备方法 |
CN109844148B (zh) * | 2016-10-07 | 2021-03-09 | 日本制铁株式会社 | 镍材及镍材的制造方法 |
EP3568377A1 (en) | 2017-01-11 | 2019-11-20 | Basf Se | Process for producing nanoparticles |
KR20200085773A (ko) | 2017-11-28 | 2020-07-15 | 바스프 에스이 | 결합된 초전도 테이프 |
CN112074750A (zh) | 2018-04-25 | 2020-12-11 | 巴斯夫欧洲公司 | 用于超导带材的质量控制的设备 |
WO2020049019A1 (en) | 2018-09-07 | 2020-03-12 | Basf Se | Process for producing nanoparticles |
WO2020064505A1 (en) | 2018-09-24 | 2020-04-02 | Basf Se | Process for producing highly oriented metal tapes |
WO2020212194A1 (en) | 2019-04-17 | 2020-10-22 | Basf Se | Sealed superconductor tape |
WO2021063723A1 (en) | 2019-09-30 | 2021-04-08 | Basf Se | High-temperature superconductor tape with buffer having controlled carbon content |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US647714A (en) * | 1899-05-01 | 1900-04-17 | Gilbert Lincoln Baker | Snap-hook. |
JPS5952503B2 (ja) * | 1975-11-07 | 1984-12-20 | 株式会社日立製作所 | 直熱形酸化物陰極用基体金属板 |
US5424029A (en) * | 1982-04-05 | 1995-06-13 | Teledyne Industries, Inc. | Corrosion resistant nickel base alloy |
CN1027182C (zh) * | 1993-01-06 | 1994-12-28 | 冶金工业部钢铁研究总院 | 耐热腐蚀铸造镍基高温合金 |
FR2737043B1 (fr) * | 1995-07-18 | 1997-08-14 | Imphy Sa | Alliage fer-nickel pour masque d'ombre tendu |
EP1208244B1 (de) * | 1999-04-03 | 2004-05-12 | Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden e.V. | Metallischer werkstoff auf nickelbasis und verfahren zu dessen herstellung |
US6447714B1 (en) * | 2000-05-15 | 2002-09-10 | Ut-Battelle, Llc | Method for forming biaxially textured articles by powder metallurgy |
DE10200445B4 (de) * | 2002-01-02 | 2005-12-08 | Leibniz-Institut für Festkörper- und Werkstoffforschung e.V. | Metallband für epitaktische Beschichtungen und Verfahren zu dessen Herstellung |
DE102004041053B4 (de) * | 2004-08-25 | 2007-08-16 | Trithor Gmbh | Verfahren zur Herstellung dicker REBCO-Schichten für bandförmige Hochtemeperatur-Supraleiter |
CN1312301C (zh) * | 2005-09-23 | 2007-04-25 | 北京工业大学 | 用于高温超导的Ni-W合金的制备方法 |
CN100374596C (zh) * | 2006-05-19 | 2008-03-12 | 北京工业大学 | Ni基合金复合基带及其粉末冶金制备方法 |
-
2008
- 2008-03-27 DE DE102008016222A patent/DE102008016222B4/de not_active Expired - Fee Related
- 2008-04-14 EP EP08748744A patent/EP2137330B1/de active Active
- 2008-04-14 US US12/596,526 patent/US20100059145A1/en not_active Abandoned
- 2008-04-14 CN CN200880012324XA patent/CN101680058B/zh active Active
- 2008-04-14 WO PCT/DE2008/000615 patent/WO2008125091A2/de active Application Filing
- 2008-04-14 RU RU2009142207/02A patent/RU2421535C1/ru active
- 2008-04-14 AT AT08748744T patent/ATE524570T1/de active
- 2008-04-14 KR KR20097021560A patent/KR101234154B1/ko active IP Right Grant
- 2008-04-14 JP JP2010503347A patent/JP5355545B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
KR20090130055A (ko) | 2009-12-17 |
KR101234154B1 (ko) | 2013-02-18 |
ATE524570T1 (de) | 2011-09-15 |
CN101680058B (zh) | 2012-05-30 |
WO2008125091A2 (de) | 2008-10-23 |
CN101680058A (zh) | 2010-03-24 |
DE102008016222A1 (de) | 2008-11-13 |
WO2008125091A3 (de) | 2009-01-15 |
EP2137330A2 (de) | 2009-12-30 |
JP2010525156A (ja) | 2010-07-22 |
DE102008016222B4 (de) | 2010-12-30 |
US20100059145A1 (en) | 2010-03-11 |
EP2137330B1 (de) | 2011-09-14 |
RU2421535C1 (ru) | 2011-06-20 |
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