JP5347835B2 - Ｉｉｉ族窒化物半導体結晶の製造方法 - Google Patents

Ｉｉｉ族窒化物半導体結晶の製造方法 Download PDF

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Publication number
JP5347835B2
JP5347835B2 JP2009194414A JP2009194414A JP5347835B2 JP 5347835 B2 JP5347835 B2 JP 5347835B2 JP 2009194414 A JP2009194414 A JP 2009194414A JP 2009194414 A JP2009194414 A JP 2009194414A JP 5347835 B2 JP5347835 B2 JP 5347835B2
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recess
sapphire substrate
nitride semiconductor
group iii
iii nitride
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JP2009194414A
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Japanese (ja)
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JP2011046544A (ja
JP2011046544A5 (cg-RX-API-DMAC10.html
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義樹 齋藤
浩司 奥野
泰久 牛田
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Toyoda Gosei Co Ltd
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Toyoda Gosei Co Ltd
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2009194414A 2009-08-25 2009-08-25 Ｉｉｉ族窒化物半導体結晶の製造方法 Expired - Fee Related JP5347835B2 (ja)

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JP2009194414A JP5347835B2 (ja) 2009-08-25 2009-08-25 Ｉｉｉ族窒化物半導体結晶の製造方法

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JP2009194414A JP5347835B2 (ja) 2009-08-25 2009-08-25 Ｉｉｉ族窒化物半導体結晶の製造方法

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JP2011046544A JP2011046544A (ja) 2011-03-10
JP2011046544A5 JP2011046544A5 (cg-RX-API-DMAC10.html) 2011-11-10
JP5347835B2 true JP5347835B2 (ja) 2013-11-20

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013173641A (ja) * 2012-02-24 2013-09-05 Tokuyama Corp 窒化ガリウム結晶積層基板及びその製造方法
JP6013743B2 (ja) * 2012-02-27 2016-10-25 株式会社トクヤマ 半導体装置の製造方法
WO2014084667A1 (ko) * 2012-11-30 2014-06-05 주식회사 소프트에피 3족 질화물 반도체 적층체
KR101635530B1 (ko) * 2014-06-25 2016-07-04 주식회사 루미스탈 다수의 공극을 갖는 질화물 반도체 결정 성장 방법 및 이를 이용한 질화물 반도체 기판 제조 방법
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体
JP7344426B2 (ja) * 2014-11-26 2023-09-14 株式会社Flosfia 結晶性積層構造体
DE102015109761B4 (de) 2015-06-18 2022-01-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Nitrid-Halbleiterbauelements und Nitrid-Halbleiterbauelement
JP7108783B2 (ja) * 2019-03-28 2022-07-28 日本碍子株式会社 半導体膜

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4016062B2 (ja) * 1998-07-31 2007-12-05 シャープ株式会社 窒化物半導体構造とその製造方法および発光素子
JP4513446B2 (ja) * 2004-07-23 2010-07-28 豊田合成株式会社 半導体結晶の結晶成長方法
JP2008110895A (ja) * 2006-10-31 2008-05-15 Mitsubishi Cable Ind Ltd 窒化物半導体結晶の製造方法
JP5353113B2 (ja) * 2008-01-29 2013-11-27 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法

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