JP5332463B2 - Ｍｅｍｓ・半導体複合素子 - Google Patents
Ｍｅｍｓ・半導体複合素子 Download PDFInfo
- Publication number
- JP5332463B2 JP5332463B2 JP2008253517A JP2008253517A JP5332463B2 JP 5332463 B2 JP5332463 B2 JP 5332463B2 JP 2008253517 A JP2008253517 A JP 2008253517A JP 2008253517 A JP2008253517 A JP 2008253517A JP 5332463 B2 JP5332463 B2 JP 5332463B2
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- JP
- Japan
- Prior art keywords
- semiconductor
- insulating film
- mems
- layer
- mems structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 140
- 239000002131 composite material Substances 0.000 title claims description 21
- 239000010410 layer Substances 0.000 claims description 153
- 239000000758 substrate Substances 0.000 claims description 44
- 239000011229 interlayer Substances 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 41
- 238000004519 manufacturing process Methods 0.000 description 35
- 230000015572 biosynthetic process Effects 0.000 description 20
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 as a second stage Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
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- Micromachines (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253517A JP5332463B2 (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ・半導体複合素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008253517A JP5332463B2 (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ・半導体複合素子 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006292189A Division JP5145688B2 (ja) | 2006-10-27 | 2006-10-27 | Ｍｅｍｓ・半導体複合回路の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009051005A JP2009051005A (ja) | 2009-03-12 |
| JP2009051005A5 JP2009051005A5 (enrdf_load_stackoverflow) | 2009-12-10 |
| JP5332463B2 true JP5332463B2 (ja) | 2013-11-06 |
Family
ID=40502540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008253517A Expired - Fee Related JP5332463B2 (ja) | 2008-09-30 | 2008-09-30 | Ｍｅｍｓ・半導体複合素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5332463B2 (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130020573A1 (en) * | 2010-03-29 | 2013-01-24 | Keiichi Fukuyama | Pressure detecting device and method for manufacturing the same, display device and method for manufacturing the same, and tft substrate with pressure detecting device |
| JP2013030905A (ja) | 2011-07-27 | 2013-02-07 | Seiko Epson Corp | Ｍｅｍｓ振動子および発振器 |
| JP2014033335A (ja) | 2012-08-03 | 2014-02-20 | Seiko Epson Corp | Ｍｅｍｓ素子、電子機器、およびｍｅｍｓ素子の製造方法 |
| JP6060569B2 (ja) * | 2012-09-07 | 2017-01-18 | セイコーエプソン株式会社 | 電子装置の製造方法 |
| JP6622822B2 (ja) | 2015-06-23 | 2019-12-18 | ノビリス セラピューティクス インコーポレイテッド | 希ガス組成物を用いた治療的な免疫調節 |
| CN111170266B (zh) * | 2019-12-31 | 2023-07-21 | 杭州士兰集成电路有限公司 | 半导体器件及其制造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07163158A (ja) * | 1993-11-30 | 1995-06-23 | Sony Corp | マイクロマシンの製造方法 |
| JP3603347B2 (ja) * | 1994-10-12 | 2004-12-22 | 株式会社デンソー | 半導体センサの製造方法 |
| JP2006095607A (ja) * | 2004-09-28 | 2006-04-13 | Seiko Epson Corp | Ｍｅｍｓ素子の製造方法及びｍｅｍｓ素子 |
| JP4724488B2 (ja) * | 2005-02-25 | 2011-07-13 | 日立オートモティブシステムズ株式会社 | 集積化マイクロエレクトロメカニカルシステム |
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2008
- 2008-09-30 JP JP2008253517A patent/JP5332463B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009051005A (ja) | 2009-03-12 |
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