JP5329701B2 - 表示基板 - Google Patents
表示基板 Download PDFInfo
- Publication number
- JP5329701B2 JP5329701B2 JP2012154595A JP2012154595A JP5329701B2 JP 5329701 B2 JP5329701 B2 JP 5329701B2 JP 2012154595 A JP2012154595 A JP 2012154595A JP 2012154595 A JP2012154595 A JP 2012154595A JP 5329701 B2 JP5329701 B2 JP 5329701B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- pixel
- storage electrode
- liquid crystal
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003860 storage Methods 0.000 claims abstract description 138
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 107
- 238000004519 manufacturing process Methods 0.000 abstract description 22
- 239000010408 film Substances 0.000 description 228
- 239000004065 semiconductor Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 29
- 239000003990 capacitor Substances 0.000 description 23
- 230000001681 protective effect Effects 0.000 description 23
- 239000010409 thin film Substances 0.000 description 22
- 239000004020 conductor Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 230000005684 electric field Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- -1 chromium series metals Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 101150022676 CSTB gene Proteins 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 101150084890 cstA gene Proteins 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2006-0046551 | 2006-05-24 | ||
| KR20060046551 | 2006-05-24 | ||
| KR10-2006-0071630 | 2006-07-28 | ||
| KR1020060071630A KR101294269B1 (ko) | 2006-05-24 | 2006-07-28 | 표시기판과 그 제조방법 및 이를 갖는 액정표시장치 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007137346A Division JP5329053B2 (ja) | 2006-05-24 | 2007-05-24 | 表示基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012208518A JP2012208518A (ja) | 2012-10-25 |
| JP5329701B2 true JP5329701B2 (ja) | 2013-10-30 |
Family
ID=39085502
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012154595A Active JP5329701B2 (ja) | 2006-05-24 | 2012-07-10 | 表示基板 |
| JP2013153750A Active JP5588549B2 (ja) | 2006-05-24 | 2013-07-24 | 表示基板とその製造方法及びこれを有する液晶表示装置 |
| JP2014152058A Active JP5944956B2 (ja) | 2006-05-24 | 2014-07-25 | 液晶表示装置 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013153750A Active JP5588549B2 (ja) | 2006-05-24 | 2013-07-24 | 表示基板とその製造方法及びこれを有する液晶表示装置 |
| JP2014152058A Active JP5944956B2 (ja) | 2006-05-24 | 2014-07-25 | 液晶表示装置 |
Country Status (3)
| Country | Link |
|---|---|
| JP (3) | JP5329701B2 (zh) |
| KR (2) | KR101294269B1 (zh) |
| CN (1) | CN101123262B (zh) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103278979B (zh) * | 2012-09-27 | 2016-04-20 | 上海天马微电子有限公司 | 平面式液晶显示器的阵列基板及其制造方法 |
| KR102164949B1 (ko) | 2014-03-25 | 2020-10-14 | 삼성디스플레이 주식회사 | 표시 장치, 이의 제조 방법 및 리페어 방법 |
| KR102242084B1 (ko) * | 2014-09-16 | 2021-04-21 | 삼성디스플레이 주식회사 | 곡면 표시 장치 |
| CN106206615B (zh) * | 2016-08-26 | 2020-01-03 | 深圳市华星光电技术有限公司 | 阵列基板的制作方法 |
| KR20180025431A (ko) * | 2016-08-30 | 2018-03-09 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN108183125B (zh) * | 2017-12-28 | 2020-12-29 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管显示面板 |
| KR102473069B1 (ko) * | 2018-01-02 | 2022-12-01 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| CN113126348B (zh) * | 2021-04-02 | 2023-02-28 | 深圳市华星光电半导体显示技术有限公司 | 液晶显示基板及液晶显示基板的制作方法 |
| CN113555373B (zh) * | 2021-07-12 | 2022-10-04 | 厦门天马微电子有限公司 | 一种显示面板及显示装置 |
| CN117687241A (zh) * | 2023-12-12 | 2024-03-12 | 惠科股份有限公司 | 显示面板及其制备方法、电子设备 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000284323A (ja) * | 1999-03-31 | 2000-10-13 | Advanced Display Inc | アクティブマトリクス型液晶表示装置とその製造方法 |
| KR20020036023A (ko) * | 2000-11-07 | 2002-05-16 | 구본준, 론 위라하디락사 | 액정 표시 장치용 어레이 기판의 제조 방법 |
| JP3753141B2 (ja) * | 2002-12-25 | 2006-03-08 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
| KR101003577B1 (ko) * | 2003-12-29 | 2010-12-23 | 엘지디스플레이 주식회사 | 마스크 및 이를 이용한 액정표시소자 제조방법 |
| TWI379113B (en) * | 2004-07-07 | 2012-12-11 | Samsung Display Co Ltd | Array substrate, manufacturing method thereof and display device having the same |
| KR101061856B1 (ko) * | 2004-11-03 | 2011-09-02 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| JP4658622B2 (ja) * | 2005-01-19 | 2011-03-23 | シャープ株式会社 | 液晶表示装置用基板及び液晶表示装置 |
-
2006
- 2006-07-28 KR KR1020060071630A patent/KR101294269B1/ko active IP Right Grant
-
2007
- 2007-05-24 CN CN2007101464130A patent/CN101123262B/zh active Active
-
2012
- 2012-07-10 JP JP2012154595A patent/JP5329701B2/ja active Active
- 2012-12-27 KR KR1020120155055A patent/KR101341060B1/ko active IP Right Grant
-
2013
- 2013-07-24 JP JP2013153750A patent/JP5588549B2/ja active Active
-
2014
- 2014-07-25 JP JP2014152058A patent/JP5944956B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP5944956B2 (ja) | 2016-07-05 |
| CN101123262B (zh) | 2011-03-02 |
| KR20070113070A (ko) | 2007-11-28 |
| KR20130009726A (ko) | 2013-01-23 |
| KR101341060B1 (ko) | 2013-12-13 |
| JP2012208518A (ja) | 2012-10-25 |
| CN101123262A (zh) | 2008-02-13 |
| JP2013242593A (ja) | 2013-12-05 |
| JP5588549B2 (ja) | 2014-09-10 |
| KR101294269B1 (ko) | 2013-08-08 |
| JP2014206762A (ja) | 2014-10-30 |
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