JP5324160B2 - 陽極酸化チャンバパーツ再生のためのウェットクリーンプロセス - Google Patents

陽極酸化チャンバパーツ再生のためのウェットクリーンプロセス Download PDF

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Publication number
JP5324160B2
JP5324160B2 JP2008212533A JP2008212533A JP5324160B2 JP 5324160 B2 JP5324160 B2 JP 5324160B2 JP 2008212533 A JP2008212533 A JP 2008212533A JP 2008212533 A JP2008212533 A JP 2008212533A JP 5324160 B2 JP5324160 B2 JP 5324160B2
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JP
Japan
Prior art keywords
anodized surface
anodized
aluminum
liquid solvent
plasma
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Expired - Fee Related
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JP2008212533A
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English (en)
Japanese (ja)
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JP2009052142A (ja
JP2009052142A5 (https=
Inventor
ワイ サン ジェニファー
サッチ センハ
ズー シ
スー リ
カーン アニスル
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2009052142A5 publication Critical patent/JP2009052142A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/44—Multi-step processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2008212533A 2007-08-27 2008-08-21 陽極酸化チャンバパーツ再生のためのウェットクリーンプロセス Expired - Fee Related JP5324160B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/845,620 US8231736B2 (en) 2007-08-27 2007-08-27 Wet clean process for recovery of anodized chamber parts
US11/845,620 2007-08-27

Publications (3)

Publication Number Publication Date
JP2009052142A JP2009052142A (ja) 2009-03-12
JP2009052142A5 JP2009052142A5 (https=) 2012-12-13
JP5324160B2 true JP5324160B2 (ja) 2013-10-23

Family

ID=40070779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008212533A Expired - Fee Related JP5324160B2 (ja) 2007-08-27 2008-08-21 陽極酸化チャンバパーツ再生のためのウェットクリーンプロセス

Country Status (6)

Country Link
US (1) US8231736B2 (https=)
EP (1) EP2031088A3 (https=)
JP (1) JP5324160B2 (https=)
KR (1) KR101037530B1 (https=)
CN (1) CN101380636B (https=)
TW (1) TWI397612B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101698941B (zh) * 2009-10-29 2012-03-21 西北锆管有限责任公司 一种降低锆合金管酸洗表面氟残留的工艺方法
KR20120137650A (ko) * 2011-06-13 2012-12-24 삼성디스플레이 주식회사 증착용 챔버의 초기화 방법, 챔버 내의 오염물 제거방법 및 챔버의 제조방법
US8545639B2 (en) * 2011-10-31 2013-10-01 Lam Research Corporation Method of cleaning aluminum plasma chamber parts
CN103794458B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于等离子体处理腔室内部的部件及制造方法
US9387521B2 (en) * 2012-12-05 2016-07-12 Lam Research Corporation Method of wet cleaning aluminum chamber parts
TWI484549B (zh) * 2013-02-08 2015-05-11 Sj High Technology Company 用於清潔半導體設備的零件之濕式清潔方法
US9624593B2 (en) * 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US9472416B2 (en) * 2013-10-21 2016-10-18 Applied Materials, Inc. Methods of surface interface engineering
CN106140660B (zh) * 2015-03-31 2019-01-22 北大方正集团有限公司 陶瓷件上聚合物的清洗方法及装置
US20170056935A1 (en) * 2015-08-28 2017-03-02 Applied Materials, Inc. Method for removing aluminum fluoride contamination from semiconductor processing equipment
CN105350053B (zh) * 2015-11-09 2017-08-11 广东长盈精密技术有限公司 金属外壳表面预处理方法
US20170213705A1 (en) * 2016-01-27 2017-07-27 Applied Materials, Inc. Slit valve gate coating and methods for cleaning slit valve gates
US9999907B2 (en) 2016-04-01 2018-06-19 Applied Materials, Inc. Cleaning process that precipitates yttrium oxy-flouride
US20180061617A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Method to deposit aluminum oxy-fluoride layer for fast recovery of etch amount in etch chamber
CN107706089B (zh) * 2017-09-19 2020-08-11 上海华虹宏力半导体制造有限公司 铝线干法刻蚀后湿法清洗方法
JP7218201B2 (ja) * 2019-02-13 2023-02-06 アルバックテクノ株式会社 アルミニウム製部品の酸化皮膜の再生方法
CN111804674A (zh) * 2020-04-27 2020-10-23 安徽富乐德科技发展股份有限公司 一种etch设备中阳极氧化部件面污染物的洗净方法
US12100576B2 (en) * 2020-04-30 2024-09-24 Applied Materials, Inc. Metal oxide preclean chamber with improved selectivity and flow conductance
CN114395784A (zh) * 2021-11-19 2022-04-26 昆明理工大学 一种双通大面积三氧化二铝、二氧化钛或二氧化锆纳米管阵列膜及其制备方法
CN115799172B (zh) * 2023-02-08 2023-04-28 粤芯半导体技术股份有限公司 金属互连线及其制造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2431595A (en) * 1942-08-06 1947-11-25 Aluminum Co Of America Method for cleaning aluminum
US3016293A (en) * 1957-07-29 1962-01-09 Reynolds Metals Co Method of multi-coloring sealed anodized aluminum
US3652429A (en) 1967-09-08 1972-03-28 Frye Ind Inc Sealing of colored anodized aluminum
LU54741A1 (https=) * 1967-10-26 1969-06-27
US3961111A (en) * 1975-03-18 1976-06-01 Pennwalt Corporation Method of increasing corrosion resistance of anodized aluminum
US5538600A (en) * 1994-07-27 1996-07-23 Aluminum Company Of America Method for desmutting aluminum alloys having a highly-reflective surface
JPH08245986A (ja) * 1995-03-08 1996-09-24 Senken:Kk 外装材表面の洗浄方法及びそれに使用される洗浄液
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6140243A (en) * 1996-12-12 2000-10-31 Texas Instruments Incorporated Low temperature process for post-etch defluoridation of metals
JPH10251900A (ja) * 1997-03-12 1998-09-22 Fuji Photo Film Co Ltd アルミニウム板の粗面化方法
WO1998056726A1 (en) * 1997-06-13 1998-12-17 Cfmt, Inc. Methods for treating semiconductor wafers
US6841008B1 (en) * 2000-07-17 2005-01-11 Cypress Semiconductor Corporation Method for cleaning plasma etch chamber structures
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
TW495863B (en) * 2000-08-11 2002-07-21 Chem Trace Inc System and method for cleaning semiconductor fabrication equipment
US6811615B2 (en) * 2001-05-24 2004-11-02 Applied Materials, Inc. Photo-assisted chemical cleaning and laser ablation cleaning of process chamber
JP3582502B2 (ja) * 2001-06-14 2004-10-27 松下電器産業株式会社 ドライエッチング装置のメンテナンス方法
US20030062064A1 (en) * 2001-09-28 2003-04-03 Infineon Technologies North America Corp. Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
US20030190870A1 (en) * 2002-04-03 2003-10-09 Applied Materials, Inc. Cleaning ceramic surfaces
TW558789B (en) * 2002-05-02 2003-10-21 Hitachi High Tech Corp Semiconductor processing device and diagnostic method of semiconductor processing device
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
US6902628B2 (en) * 2002-11-25 2005-06-07 Applied Materials, Inc. Method of cleaning a coated process chamber component
JP2004225113A (ja) * 2003-01-23 2004-08-12 Kobe Steel Ltd 耐腐食性及び耐プラズマ性に優れたＡｌ合金部材
JP2005167087A (ja) * 2003-12-04 2005-06-23 Tokyo Electron Ltd クリーニング方法及び半導体製造装置

Also Published As

Publication number Publication date
CN101380636A (zh) 2009-03-11
KR20090023167A (ko) 2009-03-04
US8231736B2 (en) 2012-07-31
KR101037530B1 (ko) 2011-05-26
CN101380636B (zh) 2013-03-27
EP2031088A3 (en) 2011-05-18
JP2009052142A (ja) 2009-03-12
TWI397612B (zh) 2013-06-01
EP2031088A2 (en) 2009-03-04
US20090056745A1 (en) 2009-03-05
TW200912044A (en) 2009-03-16

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