KR101037530B1 - 양극처리된 챔버 부품 회복을 위한 습식 세정 처리 - Google Patents

양극처리된 챔버 부품 회복을 위한 습식 세정 처리 Download PDF

Info

Publication number
KR101037530B1
KR101037530B1 KR1020080083318A KR20080083318A KR101037530B1 KR 101037530 B1 KR101037530 B1 KR 101037530B1 KR 1020080083318 A KR1020080083318 A KR 1020080083318A KR 20080083318 A KR20080083318 A KR 20080083318A KR 101037530 B1 KR101037530 B1 KR 101037530B1
Authority
KR
South Korea
Prior art keywords
anodized
cleaning
aluminum
fluoride
liquid solvent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020080083318A
Other languages
English (en)
Korean (ko)
Other versions
KR20090023167A (ko
Inventor
제니퍼 와이. 썬
센 탁
시 주
리 쑤
애니설 칸
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090023167A publication Critical patent/KR20090023167A/ko
Application granted granted Critical
Publication of KR101037530B1 publication Critical patent/KR101037530B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/40—Specific cleaning or washing processes
    • C11D2111/44—Multi-step processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • ing And Chemical Polishing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020080083318A 2007-08-27 2008-08-26 양극처리된 챔버 부품 회복을 위한 습식 세정 처리 Expired - Fee Related KR101037530B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/845,620 US8231736B2 (en) 2007-08-27 2007-08-27 Wet clean process for recovery of anodized chamber parts
US11/845,620 2007-08-27

Publications (2)

Publication Number Publication Date
KR20090023167A KR20090023167A (ko) 2009-03-04
KR101037530B1 true KR101037530B1 (ko) 2011-05-26

Family

ID=40070779

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080083318A Expired - Fee Related KR101037530B1 (ko) 2007-08-27 2008-08-26 양극처리된 챔버 부품 회복을 위한 습식 세정 처리

Country Status (6)

Country Link
US (1) US8231736B2 (https=)
EP (1) EP2031088A3 (https=)
JP (1) JP5324160B2 (https=)
KR (1) KR101037530B1 (https=)
CN (1) CN101380636B (https=)
TW (1) TWI397612B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101698941B (zh) * 2009-10-29 2012-03-21 西北锆管有限责任公司 一种降低锆合金管酸洗表面氟残留的工艺方法
KR20120137650A (ko) * 2011-06-13 2012-12-24 삼성디스플레이 주식회사 증착용 챔버의 초기화 방법, 챔버 내의 오염물 제거방법 및 챔버의 제조방법
US8545639B2 (en) * 2011-10-31 2013-10-01 Lam Research Corporation Method of cleaning aluminum plasma chamber parts
CN103794458B (zh) * 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于等离子体处理腔室内部的部件及制造方法
US9387521B2 (en) * 2012-12-05 2016-07-12 Lam Research Corporation Method of wet cleaning aluminum chamber parts
TWI484549B (zh) * 2013-02-08 2015-05-11 Sj High Technology Company 用於清潔半導體設備的零件之濕式清潔方法
US9624593B2 (en) * 2013-08-29 2017-04-18 Applied Materials, Inc. Anodization architecture for electro-plate adhesion
US9472416B2 (en) * 2013-10-21 2016-10-18 Applied Materials, Inc. Methods of surface interface engineering
CN106140660B (zh) * 2015-03-31 2019-01-22 北大方正集团有限公司 陶瓷件上聚合物的清洗方法及装置
US20170056935A1 (en) * 2015-08-28 2017-03-02 Applied Materials, Inc. Method for removing aluminum fluoride contamination from semiconductor processing equipment
CN105350053B (zh) * 2015-11-09 2017-08-11 广东长盈精密技术有限公司 金属外壳表面预处理方法
US20170213705A1 (en) * 2016-01-27 2017-07-27 Applied Materials, Inc. Slit valve gate coating and methods for cleaning slit valve gates
US9999907B2 (en) 2016-04-01 2018-06-19 Applied Materials, Inc. Cleaning process that precipitates yttrium oxy-flouride
US20180061617A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Method to deposit aluminum oxy-fluoride layer for fast recovery of etch amount in etch chamber
CN107706089B (zh) * 2017-09-19 2020-08-11 上海华虹宏力半导体制造有限公司 铝线干法刻蚀后湿法清洗方法
JP7218201B2 (ja) * 2019-02-13 2023-02-06 アルバックテクノ株式会社 アルミニウム製部品の酸化皮膜の再生方法
CN111804674A (zh) * 2020-04-27 2020-10-23 安徽富乐德科技发展股份有限公司 一种etch设备中阳极氧化部件面污染物的洗净方法
US12100576B2 (en) * 2020-04-30 2024-09-24 Applied Materials, Inc. Metal oxide preclean chamber with improved selectivity and flow conductance
CN114395784A (zh) * 2021-11-19 2022-04-26 昆明理工大学 一种双通大面积三氧化二铝、二氧化钛或二氧化锆纳米管阵列膜及其制备方法
CN115799172B (zh) * 2023-02-08 2023-04-28 粤芯半导体技术股份有限公司 金属互连线及其制造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10251900A (ja) * 1997-03-12 1998-09-22 Fuji Photo Film Co Ltd アルミニウム板の粗面化方法
KR20050086825A (ko) * 2002-11-25 2005-08-30 어플라이드 머티어리얼스, 인코포레이티드 코팅된 프로세스 챔버 부품의 세정 방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2431595A (en) * 1942-08-06 1947-11-25 Aluminum Co Of America Method for cleaning aluminum
US3016293A (en) * 1957-07-29 1962-01-09 Reynolds Metals Co Method of multi-coloring sealed anodized aluminum
US3652429A (en) 1967-09-08 1972-03-28 Frye Ind Inc Sealing of colored anodized aluminum
LU54741A1 (https=) * 1967-10-26 1969-06-27
US3961111A (en) * 1975-03-18 1976-06-01 Pennwalt Corporation Method of increasing corrosion resistance of anodized aluminum
US5538600A (en) * 1994-07-27 1996-07-23 Aluminum Company Of America Method for desmutting aluminum alloys having a highly-reflective surface
JPH08245986A (ja) * 1995-03-08 1996-09-24 Senken:Kk 外装材表面の洗浄方法及びそれに使用される洗浄液
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
US6140243A (en) * 1996-12-12 2000-10-31 Texas Instruments Incorporated Low temperature process for post-etch defluoridation of metals
WO1998056726A1 (en) * 1997-06-13 1998-12-17 Cfmt, Inc. Methods for treating semiconductor wafers
US6841008B1 (en) * 2000-07-17 2005-01-11 Cypress Semiconductor Corporation Method for cleaning plasma etch chamber structures
US6450117B1 (en) * 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
TW495863B (en) * 2000-08-11 2002-07-21 Chem Trace Inc System and method for cleaning semiconductor fabrication equipment
US6811615B2 (en) * 2001-05-24 2004-11-02 Applied Materials, Inc. Photo-assisted chemical cleaning and laser ablation cleaning of process chamber
JP3582502B2 (ja) * 2001-06-14 2004-10-27 松下電器産業株式会社 ドライエッチング装置のメンテナンス方法
US20030062064A1 (en) * 2001-09-28 2003-04-03 Infineon Technologies North America Corp. Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma
US20030190870A1 (en) * 2002-04-03 2003-10-09 Applied Materials, Inc. Cleaning ceramic surfaces
TW558789B (en) * 2002-05-02 2003-10-21 Hitachi High Tech Corp Semiconductor processing device and diagnostic method of semiconductor processing device
US7252718B2 (en) * 2002-05-31 2007-08-07 Ekc Technology, Inc. Forming a passivating aluminum fluoride layer and removing same for use in semiconductor manufacture
JP2004225113A (ja) * 2003-01-23 2004-08-12 Kobe Steel Ltd 耐腐食性及び耐プラズマ性に優れたＡｌ合金部材
JP2005167087A (ja) * 2003-12-04 2005-06-23 Tokyo Electron Ltd クリーニング方法及び半導体製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10251900A (ja) * 1997-03-12 1998-09-22 Fuji Photo Film Co Ltd アルミニウム板の粗面化方法
KR20050086825A (ko) * 2002-11-25 2005-08-30 어플라이드 머티어리얼스, 인코포레이티드 코팅된 프로세스 챔버 부품의 세정 방법

Also Published As

Publication number Publication date
CN101380636A (zh) 2009-03-11
KR20090023167A (ko) 2009-03-04
JP5324160B2 (ja) 2013-10-23
US8231736B2 (en) 2012-07-31
CN101380636B (zh) 2013-03-27
EP2031088A3 (en) 2011-05-18
JP2009052142A (ja) 2009-03-12
TWI397612B (zh) 2013-06-01
EP2031088A2 (en) 2009-03-04
US20090056745A1 (en) 2009-03-05
TW200912044A (en) 2009-03-16

Similar Documents

Publication Publication Date Title
KR101037530B1 (ko) 양극처리된 챔버 부품 회복을 위한 습식 세정 처리
JP3308091B2 (ja) 表面処理方法およびプラズマ処理装置
CN107946163B (zh) 将氧化钇化学转化为氟化钇及氟氧化钇以发展用于等离子体部件的预处理的抗腐蚀涂层
TWI575594B (zh) 清洗鋁電漿室部件之方法
US6506254B1 (en) Semiconductor processing equipment having improved particle performance
CN101152651B (zh) 一种陶瓷零件表面的清洗方法
CN110364424B (zh) 半导体处理设备零部件的清洗方法
KR100445273B1 (ko) 세라믹 절연체의 세정방법
KR101087404B1 (ko) 내식성 프로세스 챔버 부품
JP2024536969A (ja) プロセスチャンバ部品のための高度バリア酸化ニッケル（ＢＮｉＯ）コーティング開発
CN101214485B (zh) 一种多晶硅刻蚀腔室中阳极氧化零件表面的清洗方法
TW201325744A (zh) 具有氧化釔包覆層的工件的污染物的處理方法
CN114496710A (zh) 一种半导体设备陶瓷窗氧化钇涂层清洗方法
CN101152652B (zh) 一种阳极氧化零件表面的清洗方法
TWI650813B (zh) 電漿處理方法
JP3148878B2 (ja) アルミニウム板、その製造方法及び該アルミニウム板を用いた防着カバー
CN102024659A (zh) 物理气相沉积设备的清洗方法
KR102625872B1 (ko) 물리적 연마 단계 및 양극산화 단계를 포함하는 알루미늄 소재 리모트 플라즈마 소스 챔버의 표면 처리 방법
KR100439478B1 (ko) 금속막 증착설비용 실드 세정방법
CN113130290A (zh) 一种单晶片的湿法清洗方法
KR20070068747A (ko) 반도체 제조 설비의 세정 방법
JP2001127035A (ja) プロセスチャンバー表面のクリーニング方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140521

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140521

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000