JP5320910B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5320910B2 JP5320910B2 JP2008225839A JP2008225839A JP5320910B2 JP 5320910 B2 JP5320910 B2 JP 5320910B2 JP 2008225839 A JP2008225839 A JP 2008225839A JP 2008225839 A JP2008225839 A JP 2008225839A JP 5320910 B2 JP5320910 B2 JP 5320910B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- silicone resin
- spin
- emitting device
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920002050 silicone resin Polymers 0.000 claims description 51
- 238000000034 method Methods 0.000 claims description 23
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- -1 diphenylsiloxane structure Chemical group 0.000 claims description 8
- 229920001296 polysiloxane Polymers 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- NYMPGSQKHIOWIO-UHFFFAOYSA-N hydroxy(diphenyl)silicon Chemical group C=1C=CC=CC=1[Si](O)C1=CC=CC=C1 NYMPGSQKHIOWIO-UHFFFAOYSA-N 0.000 claims 1
- 238000012360 testing method Methods 0.000 description 21
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- 239000004065 semiconductor Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
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- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
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- 239000011777 magnesium Substances 0.000 description 2
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- 125000003518 norbornenyl group Chemical group C12(C=CC(CC1)C2)* 0.000 description 2
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- 239000003795 chemical substances by application Substances 0.000 description 1
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- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- NOKUWSXLHXMAOM-UHFFFAOYSA-N hydroxy(phenyl)silicon Chemical class O[Si]C1=CC=CC=C1 NOKUWSXLHXMAOM-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 238000000371 solid-state nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/70—Siloxanes defined by use of the MDTQ nomenclature
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- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/45001—Core members of the connector
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Description
III族窒化物系化合物半導体層はMOCVD(有機金属気相成長)法により形成される。素子を構成する全ての半導体層を当該MOCVD法で形成する必要はなく、分子線結晶成長法(MBE法)、ハライド系気相成長法(HVPE法)、スパッタ法、イオンプレーティング法等を併用することが可能である。
<各種シリコーン樹脂のスピン−スピン緩和時間の測定>
各種シリコーン樹脂のスピン−スピン緩和時間を以下の条件によって測定した。
測定装置: 日本電子MU25型
共鳴周波数: 25MHz
測定温度: 25 °C
観測核種: 1H
磁石: 永久磁石 0.58T
検出方式: QD方式(Quadrature Detection)
パルス系列: ソリッド−エコー法
RFパルス幅:2マイクロ秒
パルス間隔: 8マイクロ秒
パルス繰り返し時間: 1sec
上記のようにしてスピン−スピン緩和時間を測定したシリコーン樹脂を封止剤として、図1に示すように、フェイスアップの発光素子を使用したトップビュータイプの青色発光の発光装置1を作製し、耐久試験をおこなった。発光素子10は全面に銀めっきが施されたリードフレーム20上に、シリコーンペースト20aによって固定されている。発光素子10の図示しないn電極及びp電極は、それぞれAuワイヤ11及び12によりリードフレーム20にワイヤボンディングされている。リードフレーム20は樹脂製ケース21に設けられた凹部21aの底面に固定され、両端が露出するように樹脂製ケース21に埋め込まれている。さらに、凹部21aはシリコーン樹脂からなるシリコーン封止部22によって封止されており、これにより発光素子10は封止されている。
銀めっきの施されたリードフレーム20を用意し、型成形によって樹脂製ケース21を成形するとともに、リードフレーム20を凹部21aの底に固定する。発光素子10を銀めっきが施されたリードフレーム20の上にシリコーン樹脂20aによって固定する。発光素子10の図示しないn電極及びp電極はそれぞれ金ワイヤ11及び12により、リードフレーム20にワイヤボンディングする。そして、上記のようにしてスピン−スピン緩和時間が測定された各種のシリコーン樹脂を凹部21aに充填し、加熱硬化させて、発光装置1を得た。
測定したシリコーン樹脂の種類を表1に示す。また、測定されたスピン−スピン緩和時間及び耐久試験の結果を表2に示す。なお、表2における緩和時間の単位は全てマイクロ秒である。また、緩和時間におけるT2(1)、T2(2)、T2(3)は、各相ごとに求められた緩和時間である。さらに、成分量AM(1)、AM(2)、AM(3)は、緩和時間がT2(1)、T2(2)、T2(3)を示す各相の成分の割合を示している。
フェイスアップの発光素子を使用したトップビュータイプの青色LED及び白色LEDを用い、耐久試験を行った。封止剤としてのシリコーン樹脂は、上記実施例3、比較例1、比較例2及び比較例3において用いたシリコーン樹脂を用いた。各シリコーン樹脂のスピン−スピン緩和時間T2(平均)は実施例3が20マイクロ秒、比較例1が1417マイクロ秒、比較例2が628マイクロ秒、比較例3が1112マイクロ秒である。
また、硬化後の屈折率を測定したところ、表2に示すように、実施例1 〜3のシリコーン樹脂では1.5以上であったのに対し、比較例1及び2では1.41、比較例3では1.40と低かった。このことから、スピン−スピン緩和時間T2(平均)の値が短いものほど、屈折率が大きい傾向にあった。
このように、バンプによって発光素子を固定する発光装置であっても、本発明の効果を奏することができる。
10…発光素子
22…シリコーン封止部
Claims (3)
- リードフレームに固定された発光素子と、該発光素子をシリコーン樹脂で封止するシリコーン封止部とを備え、該リードフレームの少なくとも該発光素子側の表面はAg、Cu又はAlが主成分とされている発光装置において、
前記シリコーン樹脂は、パルスNMR法によって測定された1H核の平均のスピン−スピン緩和時間が25°C、共鳴周波数25MHzにおいて50マイクロ秒以下であり、ジフェニルシロキサン構造若しくはSi−ノルボルネン構造を有するシリコーン樹脂であることを特徴とする発光装置。 - 前記リードフレームの少なくとも前記発光素子側の表面は、銀めっきが施されていることを特徴とする請求項1に記載の発光装置。
- 前記シリコーン樹脂はジフェニルシロキサン構造及びSi−ノルボルネン構造を有する熱硬化性シリコーン樹脂であることを特徴とする請求項1又は2記載の発光装置。
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