JP5317156B2 - マイクロリソグラフィ投影露光装置の投影対物レンズ - Google Patents

マイクロリソグラフィ投影露光装置の投影対物レンズ Download PDF

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Publication number
JP5317156B2
JP5317156B2 JP2007211846A JP2007211846A JP5317156B2 JP 5317156 B2 JP5317156 B2 JP 5317156B2 JP 2007211846 A JP2007211846 A JP 2007211846A JP 2007211846 A JP2007211846 A JP 2007211846A JP 5317156 B2 JP5317156 B2 JP 5317156B2
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Japan
Prior art keywords
lens
projection objective
members
lens members
crystal
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Expired - Fee Related
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JP2007211846A
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English (en)
Japanese (ja)
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JP2008046641A (ja
JP2008046641A5 (enExample
Inventor
クレーマー ダニエル
ルオフ ヨハネス
Original Assignee
カール・ツァイス・エスエムティー・ゲーエムベーハー
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966—Birefringence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
  • Electron Beam Exposure (AREA)
JP2007211846A 2006-08-15 2007-08-15 マイクロリソグラフィ投影露光装置の投影対物レンズ Expired - Fee Related JP5317156B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US82242706P 2006-08-15 2006-08-15
US60/822427 2006-08-15
DE102006038398A DE102006038398A1 (de) 2006-08-15 2006-08-15 Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
DE102006038398.2 2006-08-15

Publications (3)

Publication Number Publication Date
JP2008046641A JP2008046641A (ja) 2008-02-28
JP2008046641A5 JP2008046641A5 (enExample) 2010-09-30
JP5317156B2 true JP5317156B2 (ja) 2013-10-16

Family

ID=38954802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007211846A Expired - Fee Related JP5317156B2 (ja) 2006-08-15 2007-08-15 マイクロリソグラフィ投影露光装置の投影対物レンズ

Country Status (8)

Country Link
US (1) US7679831B2 (enExample)
EP (1) EP1890193B1 (enExample)
JP (1) JP5317156B2 (enExample)
KR (1) KR101388297B1 (enExample)
CN (1) CN101126907B (enExample)
AT (1) ATE486302T1 (enExample)
DE (2) DE102006038398A1 (enExample)
TW (1) TWI425245B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008087827A1 (ja) * 2007-01-16 2008-07-24 Nikon Corporation 結像光学系、露光装置、およびデバイス製造方法
JP2008216498A (ja) * 2007-03-01 2008-09-18 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009031603A (ja) * 2007-07-27 2009-02-12 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009086038A (ja) * 2007-09-27 2009-04-23 Canon Inc 投影光学系、露光装置及びデバイス製造方法
CN111302297A (zh) * 2020-02-17 2020-06-19 福建晶安光电有限公司 图形化镥铝石榴石晶片结构及其制备方法、包括该结构的发光装置封装件和投影仪

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2699706A (en) * 1949-11-08 1955-01-18 Boone Philip Ornamental object having birefringent and polarizing layers
JPH1020197A (ja) * 1996-06-28 1998-01-23 Nikon Corp 反射屈折光学系及びその調整方法
DE60124524T2 (de) * 2000-04-25 2007-03-08 Asml Holding, N.V. Optisches reduktionssystem mit kontrolle der belichtungspolarisation
DE10040998A1 (de) * 2000-08-22 2002-03-14 Zeiss Carl Projektionsbelichtungsanlage
WO2002093209A2 (de) * 2001-05-15 2002-11-21 Carl Zeiss Objektiv mit fluorid-kristall-linsen
US6683710B2 (en) * 2001-06-01 2004-01-27 Optical Research Associates Correction of birefringence in cubic crystalline optical systems
US6775063B2 (en) * 2001-07-10 2004-08-10 Nikon Corporation Optical system and exposure apparatus having the optical system
DE10133841A1 (de) * 2001-07-18 2003-02-06 Zeiss Carl Objektiv mit Kristall-Linsen
US6844972B2 (en) * 2001-10-30 2005-01-18 Mcguire, Jr. James P. Reducing aberration in optical systems comprising cubic crystalline optical elements
US6958864B2 (en) 2002-08-22 2005-10-25 Asml Netherlands B.V. Structures and methods for reducing polarization aberration in integrated circuit fabrication systems
US7239450B2 (en) * 2004-11-22 2007-07-03 Carl Zeiss Smt Ag Method of determining lens materials for a projection exposure apparatus
KR20070105976A (ko) * 2005-02-25 2007-10-31 칼 짜이스 에스엠티 아게 광학시스템, 특히 마이크로리소그래픽 투사노출장치용대물렌즈 또는 조명장치
DE102006013560A1 (de) 2005-04-19 2006-10-26 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage sowie Verfahren zu dessen Herstellung
DE102006025044A1 (de) 2005-08-10 2007-02-15 Carl Zeiss Smt Ag Abbildungssystem, insbesondere Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage

Also Published As

Publication number Publication date
TWI425245B (zh) 2014-02-01
KR20080015755A (ko) 2008-02-20
CN101126907A (zh) 2008-02-20
CN101126907B (zh) 2013-06-12
DE602007010060D1 (de) 2010-12-09
JP2008046641A (ja) 2008-02-28
US7679831B2 (en) 2010-03-16
EP1890193A1 (en) 2008-02-20
US20080043331A1 (en) 2008-02-21
TW200831943A (en) 2008-08-01
KR101388297B1 (ko) 2014-04-22
EP1890193B1 (en) 2010-10-27
DE102006038398A1 (de) 2008-02-21
ATE486302T1 (de) 2010-11-15

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