TWI425245B - 微影成像投影曝光裝置之投影物鏡 - Google Patents
微影成像投影曝光裝置之投影物鏡 Download PDFInfo
- Publication number
- TWI425245B TWI425245B TW096129912A TW96129912A TWI425245B TW I425245 B TWI425245 B TW I425245B TW 096129912 A TW096129912 A TW 096129912A TW 96129912 A TW96129912 A TW 96129912A TW I425245 B TWI425245 B TW I425245B
- Authority
- TW
- Taiwan
- Prior art keywords
- lens
- lens elements
- projection objective
- elements
- optical axis
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 74
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000011029 spinel Substances 0.000 claims abstract description 5
- 229910052596 spinel Inorganic materials 0.000 claims abstract description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 3
- 239000011777 magnesium Substances 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 77
- 238000003384 imaging method Methods 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 12
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 4
- 229910020068 MgAl Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- HVOWEHOJFWHPOV-UHFFFAOYSA-J lithium lanthanum(3+) tetrafluoride Chemical compound [F-].[Li+].[La+3].[F-].[F-].[F-] HVOWEHOJFWHPOV-UHFFFAOYSA-J 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 abstract 1
- 238000007654 immersion Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 241000234282 Allium Species 0.000 description 3
- 235000002732 Allium cepa var. cepa Nutrition 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- PXXNTAGJWPJAGM-VCOUNFBDSA-N Decaline Chemical compound C=1([C@@H]2C3)C=C(OC)C(OC)=CC=1OC(C=C1)=CC=C1CCC(=O)O[C@H]3C[C@H]1N2CCCC1 PXXNTAGJWPJAGM-VCOUNFBDSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- -1 lithium niobium fluoride Chemical compound 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Lenses (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Microscoopes, Condenser (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82242706P | 2006-08-15 | 2006-08-15 | |
| DE102006038398A DE102006038398A1 (de) | 2006-08-15 | 2006-08-15 | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200831943A TW200831943A (en) | 2008-08-01 |
| TWI425245B true TWI425245B (zh) | 2014-02-01 |
Family
ID=38954802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096129912A TWI425245B (zh) | 2006-08-15 | 2007-08-14 | 微影成像投影曝光裝置之投影物鏡 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7679831B2 (enExample) |
| EP (1) | EP1890193B1 (enExample) |
| JP (1) | JP5317156B2 (enExample) |
| KR (1) | KR101388297B1 (enExample) |
| CN (1) | CN101126907B (enExample) |
| AT (1) | ATE486302T1 (enExample) |
| DE (2) | DE102006038398A1 (enExample) |
| TW (1) | TWI425245B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008087827A1 (ja) * | 2007-01-16 | 2008-07-24 | Nikon Corporation | 結像光学系、露光装置、およびデバイス製造方法 |
| JP2008216498A (ja) * | 2007-03-01 | 2008-09-18 | Canon Inc | 投影光学系、露光装置及びデバイス製造方法 |
| JP2009031603A (ja) * | 2007-07-27 | 2009-02-12 | Canon Inc | 投影光学系、露光装置及びデバイス製造方法 |
| JP2009086038A (ja) * | 2007-09-27 | 2009-04-23 | Canon Inc | 投影光学系、露光装置及びデバイス製造方法 |
| CN111302297A (zh) * | 2020-02-17 | 2020-06-19 | 福建晶安光电有限公司 | 图形化镥铝石榴石晶片结构及其制备方法、包括该结构的发光装置封装件和投影仪 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW591242B (en) * | 2001-05-15 | 2004-06-11 | Zeiss Carl Semiconductor Mfg | Objective with fluoride crystal lenses |
| US20050036201A1 (en) * | 2001-06-01 | 2005-02-17 | Asml Netherlands B.V. | Correction of birefringence in cubic crystalline optical systems |
| US20060109560A1 (en) * | 2004-11-22 | 2006-05-25 | Vladimir Kamenov | Method of determining lens materials for a projection exposure apparatus |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2699706A (en) * | 1949-11-08 | 1955-01-18 | Boone Philip | Ornamental object having birefringent and polarizing layers |
| JPH1020197A (ja) * | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系及びその調整方法 |
| EP1277073B1 (en) * | 2000-04-25 | 2006-11-15 | ASML Holding N.V. | Optical reduction system with control of illumination polarization |
| DE10040998A1 (de) * | 2000-08-22 | 2002-03-14 | Zeiss Carl | Projektionsbelichtungsanlage |
| US6775063B2 (en) * | 2001-07-10 | 2004-08-10 | Nikon Corporation | Optical system and exposure apparatus having the optical system |
| DE10133841A1 (de) * | 2001-07-18 | 2003-02-06 | Zeiss Carl | Objektiv mit Kristall-Linsen |
| US6844972B2 (en) * | 2001-10-30 | 2005-01-18 | Mcguire, Jr. James P. | Reducing aberration in optical systems comprising cubic crystalline optical elements |
| US6958864B2 (en) * | 2002-08-22 | 2005-10-25 | Asml Netherlands B.V. | Structures and methods for reducing polarization aberration in integrated circuit fabrication systems |
| WO2006089919A1 (en) * | 2005-02-25 | 2006-08-31 | Carl Zeiss Smt Ag | Optical system, in particular objective or illumination system for a microlithographic projection exposure apparatus |
| DE102006013560A1 (de) * | 2005-04-19 | 2006-10-26 | Carl Zeiss Smt Ag | Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage sowie Verfahren zu dessen Herstellung |
| DE102006025044A1 (de) * | 2005-08-10 | 2007-02-15 | Carl Zeiss Smt Ag | Abbildungssystem, insbesondere Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage |
-
2006
- 2006-08-15 DE DE102006038398A patent/DE102006038398A1/de not_active Ceased
-
2007
- 2007-08-10 DE DE602007010060T patent/DE602007010060D1/de active Active
- 2007-08-10 EP EP07114145A patent/EP1890193B1/en not_active Not-in-force
- 2007-08-10 AT AT07114145T patent/ATE486302T1/de not_active IP Right Cessation
- 2007-08-14 TW TW096129912A patent/TWI425245B/zh not_active IP Right Cessation
- 2007-08-14 CN CN200710152722.9A patent/CN101126907B/zh not_active Expired - Fee Related
- 2007-08-15 US US11/838,995 patent/US7679831B2/en not_active Expired - Fee Related
- 2007-08-15 JP JP2007211846A patent/JP5317156B2/ja not_active Expired - Fee Related
- 2007-08-16 KR KR1020070082272A patent/KR101388297B1/ko not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW591242B (en) * | 2001-05-15 | 2004-06-11 | Zeiss Carl Semiconductor Mfg | Objective with fluoride crystal lenses |
| US20050036201A1 (en) * | 2001-06-01 | 2005-02-17 | Asml Netherlands B.V. | Correction of birefringence in cubic crystalline optical systems |
| US20060109560A1 (en) * | 2004-11-22 | 2006-05-25 | Vladimir Kamenov | Method of determining lens materials for a projection exposure apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1890193A1 (en) | 2008-02-20 |
| KR101388297B1 (ko) | 2014-04-22 |
| CN101126907A (zh) | 2008-02-20 |
| JP5317156B2 (ja) | 2013-10-16 |
| US20080043331A1 (en) | 2008-02-21 |
| TW200831943A (en) | 2008-08-01 |
| EP1890193B1 (en) | 2010-10-27 |
| CN101126907B (zh) | 2013-06-12 |
| KR20080015755A (ko) | 2008-02-20 |
| ATE486302T1 (de) | 2010-11-15 |
| US7679831B2 (en) | 2010-03-16 |
| DE102006038398A1 (de) | 2008-02-21 |
| JP2008046641A (ja) | 2008-02-28 |
| DE602007010060D1 (de) | 2010-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |