JP5313487B2 - 不揮発性半導体記憶素子および不揮発性半導体記憶装置 - Google Patents
不揮発性半導体記憶素子および不揮発性半導体記憶装置 Download PDFInfo
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- JP5313487B2 JP5313487B2 JP2007301370A JP2007301370A JP5313487B2 JP 5313487 B2 JP5313487 B2 JP 5313487B2 JP 2007301370 A JP2007301370 A JP 2007301370A JP 2007301370 A JP2007301370 A JP 2007301370A JP 5313487 B2 JP5313487 B2 JP 5313487B2
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 230000015654 memory Effects 0.000 claims description 192
- 238000000034 method Methods 0.000 claims description 37
- 125000006850 spacer group Chemical group 0.000 claims description 16
- 239000002784 hot electron Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 7
- 239000007924 injection Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000013500 data storage Methods 0.000 description 35
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- 239000000969 carrier Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
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- 229910000664 lithium aluminum titanium phosphates (LATP) Inorganic materials 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
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- 239000000758 substrate Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 230000003068 static effect Effects 0.000 description 1
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Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007301370A JP5313487B2 (ja) | 2007-11-21 | 2007-11-21 | 不揮発性半導体記憶素子および不揮発性半導体記憶装置 |
| US12/246,193 US8106443B2 (en) | 2007-10-09 | 2008-10-06 | Non-volatile semiconductor memory device |
| US12/782,378 US8492826B2 (en) | 2007-10-09 | 2010-05-18 | Non-volatile semiconductor memory device and manufacturing method thereof |
| US13/350,703 US20120112265A1 (en) | 2007-10-09 | 2012-01-13 | Non-volatile semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007301370A JP5313487B2 (ja) | 2007-11-21 | 2007-11-21 | 不揮発性半導体記憶素子および不揮発性半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009129487A JP2009129487A (ja) | 2009-06-11 |
| JP2009129487A5 JP2009129487A5 (https=) | 2011-01-27 |
| JP5313487B2 true JP5313487B2 (ja) | 2013-10-09 |
Family
ID=40820262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007301370A Expired - Fee Related JP5313487B2 (ja) | 2007-10-09 | 2007-11-21 | 不揮発性半導体記憶素子および不揮発性半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5313487B2 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5522296B2 (ja) * | 2013-06-03 | 2014-06-18 | 凸版印刷株式会社 | 不揮発性半導体記憶装置 |
| JP6220041B2 (ja) * | 2016-12-15 | 2017-10-25 | ローム株式会社 | 半導体不揮発記憶回路及びその試験方法 |
| US20220254799A1 (en) * | 2021-02-05 | 2022-08-11 | Macronix International Co., Ltd. | Semiconductor device and operation method thereof |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257561A (ja) * | 1984-06-04 | 1985-12-19 | Mitsubishi Electric Corp | 半導体装置 |
| US5029131A (en) * | 1988-06-29 | 1991-07-02 | Seeq Technology, Incorporated | Fault tolerant differential memory cell and sensing |
| JPH0482093A (ja) * | 1990-07-23 | 1992-03-16 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| JPH05101683A (ja) * | 1991-10-08 | 1993-04-23 | Nec Corp | 不揮発性半導体記憶装置 |
| JP4601287B2 (ja) * | 2002-12-26 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP4601316B2 (ja) * | 2004-03-31 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| JP2007004911A (ja) * | 2005-06-24 | 2007-01-11 | Sharp Corp | 半導体記憶装置 |
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2007
- 2007-11-21 JP JP2007301370A patent/JP5313487B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2009129487A (ja) | 2009-06-11 |
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