JP5306705B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5306705B2 JP5306705B2 JP2008135796A JP2008135796A JP5306705B2 JP 5306705 B2 JP5306705 B2 JP 5306705B2 JP 2008135796 A JP2008135796 A JP 2008135796A JP 2008135796 A JP2008135796 A JP 2008135796A JP 5306705 B2 JP5306705 B2 JP 5306705B2
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- Prior art keywords
- insulator
- integrated circuit
- layer
- semiconductor integrated
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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| TWI570809B (zh) * | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR101912888B1 (ko) * | 2011-10-07 | 2018-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 |
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