JP5296956B2 - 金属を堆積させる方法、金属を堆積させるツール、配線を形成する方法及びプラズマスパッタリアクタ - Google Patents

金属を堆積させる方法、金属を堆積させるツール、配線を形成する方法及びプラズマスパッタリアクタ Download PDF

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Publication number
JP5296956B2
JP5296956B2 JP2003544237A JP2003544237A JP5296956B2 JP 5296956 B2 JP5296956 B2 JP 5296956B2 JP 2003544237 A JP2003544237 A JP 2003544237A JP 2003544237 A JP2003544237 A JP 2003544237A JP 5296956 B2 JP5296956 B2 JP 5296956B2
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Prior art keywords
sputtering
chamber
target
layer
plasma
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Expired - Fee Related
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Japanese (ja)
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JP2005510045A (ja
Inventor
ディン，ペイジュン
ロン タオ，
ゼン シュー，
ダニエル， シー． ルーベン，
サラジ レンガラジャン，
マイケル， エー． ミラー，
アルヴァンド サンダーラジャン，
シャンミン タン，
ジョン， シー． フォースター，
ジャンミン フ，
ロデリック， シー． モゼリー，
フセン チェン，
プラバラム ゴパルラジャ，
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from US09/993,543 external-priority patent/US6610184B2/en
Priority claimed from US10/202,778 external-priority patent/US20030116427A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority claimed from PCT/US2002/036940 external-priority patent/WO2003042424A1/en
Publication of JP2005510045A publication Critical patent/JP2005510045A/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3457—Sputtering using other particles than noble gas ions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2003544237A 2001-11-14 2002-11-14 金属を堆積させる方法、金属を堆積させるツール、配線を形成する方法及びプラズマスパッタリアクタ Expired - Fee Related JP5296956B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US09/993,543 2001-11-14
US09/993,543 US6610184B2 (en) 2001-11-14 2001-11-14 Magnet array in conjunction with rotating magnetron for plasma sputtering
US34260801P 2001-12-21 2001-12-21
US60/342,608 2001-12-21
US10/202,778 2002-07-25
US10/202,778 US20030116427A1 (en) 2001-08-30 2002-07-25 Self-ionized and inductively-coupled plasma for sputtering and resputtering
PCT/US2002/036940 WO2003042424A1 (en) 2000-10-10 2002-11-14 Self-ionized and inductively-coupled plasma for sputtering and resputtering

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010153219A Division JP5876213B2 (ja) 2001-11-14 2010-07-05 配線を形成する方法及びプラズマスパッタリアクタ
JP2013082450A Division JP5960087B2 (ja) 2001-11-14 2013-04-10 スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ

Publications (2)

Publication Number Publication Date
JP2005510045A JP2005510045A (ja) 2005-04-14
JP5296956B2 true JP5296956B2 (ja) 2013-09-25

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JP2003544237A Expired - Fee Related JP5296956B2 (ja) 2001-11-14 2002-11-14 金属を堆積させる方法、金属を堆積させるツール、配線を形成する方法及びプラズマスパッタリアクタ
JP2010153219A Expired - Lifetime JP5876213B2 (ja) 2001-11-14 2010-07-05 配線を形成する方法及びプラズマスパッタリアクタ
JP2013082450A Expired - Lifetime JP5960087B2 (ja) 2001-11-14 2013-04-10 スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ
JP2015125418A Expired - Fee Related JP6336945B2 (ja) 2001-11-14 2015-06-23 スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ

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JP2010153219A Expired - Lifetime JP5876213B2 (ja) 2001-11-14 2010-07-05 配線を形成する方法及びプラズマスパッタリアクタ
JP2013082450A Expired - Lifetime JP5960087B2 (ja) 2001-11-14 2013-04-10 スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ
JP2015125418A Expired - Fee Related JP6336945B2 (ja) 2001-11-14 2015-06-23 スパッタリング及び再スパッタリングのための自己イオン化したプラズマ及び誘導結合したプラズマ

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JP (4) JP5296956B2 (ko)
KR (4) KR101179727B1 (ko)
CN (2) CN1656243B (ko)

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Also Published As

Publication number Publication date
CN101847598B (zh) 2012-06-20
JP5960087B2 (ja) 2016-08-02
CN1656243A (zh) 2005-08-17
JP6336945B2 (ja) 2018-06-06
JP2005510045A (ja) 2005-04-14
KR20100049710A (ko) 2010-05-12
JP2010283360A (ja) 2010-12-16
KR20100051882A (ko) 2010-05-18
CN101847598A (zh) 2010-09-29
CN1656243B (zh) 2010-06-16
KR101312690B1 (ko) 2013-09-27
KR101179727B1 (ko) 2012-09-04
JP2015201662A (ja) 2015-11-12
KR20120043163A (ko) 2012-05-03
KR101179726B1 (ko) 2012-09-04
KR20040065222A (ko) 2004-07-21
JP2013189711A (ja) 2013-09-26
JP5876213B2 (ja) 2016-03-02
KR100993046B1 (ko) 2010-11-08

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