JP5295829B2 - 基板洗浄方法 - Google Patents
基板洗浄方法 Download PDFInfo
- Publication number
- JP5295829B2 JP5295829B2 JP2009059331A JP2009059331A JP5295829B2 JP 5295829 B2 JP5295829 B2 JP 5295829B2 JP 2009059331 A JP2009059331 A JP 2009059331A JP 2009059331 A JP2009059331 A JP 2009059331A JP 5295829 B2 JP5295829 B2 JP 5295829B2
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- substrate
- cleaning
- discharge electrode
- wafer
- aerosol
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- 238000004140 cleaning Methods 0.000 title claims abstract description 151
- 239000000758 substrate Substances 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 87
- 239000000443 aerosol Substances 0.000 claims abstract description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 238000009833 condensation Methods 0.000 claims abstract description 6
- 230000005494 condensation Effects 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract description 4
- 239000010419 fine particle Substances 0.000 claims description 43
- 239000007788 liquid Substances 0.000 claims description 35
- 239000007787 solid Substances 0.000 claims description 22
- 238000005406 washing Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 14
- 235000012431 wafers Nutrition 0.000 description 99
- 230000008569 process Effects 0.000 description 45
- 238000012545 processing Methods 0.000 description 43
- 230000007246 mechanism Effects 0.000 description 19
- 238000012546 transfer Methods 0.000 description 18
- 230000006870 function Effects 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008030 elimination Effects 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007590 electrostatic spraying Methods 0.000 description 2
- 238000011086 high cleaning Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011859 microparticle Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000008263 liquid aerosol Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000010407 vacuum cleaning Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
12 ウエハ反転ユニット
13 ローダーモジュール
17A,17B 洗浄ユニット
25 プロセスモジュール
27 ロード・ロックモジュール
40 オペレーションコントローラ
41 チャンバ
42 保持部材
43 放熱フィン
44 冷却機構
45 放電電極
46 対向電極
47 直流電源
51 チャンバ
52 ステージ
53 シリンジノズル
54 洗浄液供給ライン
55 洗浄液供給源
56 バルブ
57 直流電源
58 ヒータ
80 水微粒子
90 洗浄液微粒子
W (半導体)ウエハ
Claims (5)
- 代表長が0.1μm以下の溝又は穴を有する微細パターンが形成された基板を洗浄するための基板洗浄方法であって、
水分を含んだ空間において、所定位置に配置された対向電極を挟んで、鋭角状の先端部を有する冷却自在の放電電極の前記先端部に対して一定間隔で対面するように、前記基板を配置する基板配置ステップと、
前記放電電極を冷却して前記放電電極に結露を生じさせると共に、前記放電電極と前記対向電極との間に一定電圧を印加する洗浄ステップと、を有し、
前記洗浄ステップでは、前記放電電極の前記先端部で直径が10nm以下の水微粒子を含有するエアロゾルを発生させ、前記エアロゾルを前記基板に噴霧することにより前記基板を洗浄することを特徴とする基板洗浄方法。 - 前記対向電極として、各部位が前記放電電極の先端から均等な距離を保つように設置された円環状電極を用いることを特徴とする請求項1記載の基板洗浄方法。
- 前記洗浄ステップにおいて、前記放電電極に負電圧を印加し、前記基板を正帯電させることを特徴とする請求項1記載の基板洗浄方法。
- 代表長が0.1μm以下の溝又は穴を有する微細パターンが形成された基板を洗浄するための基板洗浄方法であって、
前記基板を、鋭角状の先端部を有する中空針状の放電電極の前記先端部に対して一定間隔で対面するように配置する基板配置ステップと、
前記放電電極へ洗浄液を供給すると共に、前記放電電極と前記基板との間に一定電圧を印加する洗浄ステップと、を有し、
前記洗浄ステップでは、前記洗浄液として直径10nm以下の固体微粒子を含有するゾルを用い、前記先端部に直径が10nm以下の前記洗浄液のエアロゾルを生成させ、前記エアロゾルが前記基板に到達するまでに前記エアロゾルから水分を蒸発させることにより、前記固体微粒子を前記基板に噴射して前記基板を洗浄することを特徴とする基板洗浄方法。 - 前記基板配置ステップの後であって前記洗浄ステップの前に、又は、前記洗浄ステップにおいて、処理雰囲気中のガス分子をイオン化させる軟X線又は光を前記基板に照射することを特徴とする請求項4記載の基板洗浄方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009059331A JP5295829B2 (ja) | 2009-03-12 | 2009-03-12 | 基板洗浄方法 |
PCT/JP2010/054482 WO2010104207A1 (ja) | 2009-03-12 | 2010-03-10 | 基板洗浄方法 |
CN201080011571.5A CN102349137B (zh) | 2009-03-12 | 2010-03-10 | 衬底清洗方法 |
KR1020117023695A KR101310513B1 (ko) | 2009-03-12 | 2010-03-10 | 기판 세정 방법 |
US13/255,758 US20120055506A1 (en) | 2009-03-12 | 2010-03-10 | Substrate cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009059331A JP5295829B2 (ja) | 2009-03-12 | 2009-03-12 | 基板洗浄方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010212586A JP2010212586A (ja) | 2010-09-24 |
JP5295829B2 true JP5295829B2 (ja) | 2013-09-18 |
Family
ID=42728485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009059331A Expired - Fee Related JP5295829B2 (ja) | 2009-03-12 | 2009-03-12 | 基板洗浄方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120055506A1 (ja) |
JP (1) | JP5295829B2 (ja) |
KR (1) | KR101310513B1 (ja) |
CN (1) | CN102349137B (ja) |
WO (1) | WO2010104207A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5783971B2 (ja) * | 2012-08-10 | 2015-09-24 | 株式会社東芝 | 塗布装置および塗布方法 |
JP6378890B2 (ja) * | 2013-03-01 | 2018-08-22 | 株式会社荏原製作所 | 基板処理方法 |
KR20160039957A (ko) * | 2014-10-02 | 2016-04-12 | 삼성전자주식회사 | 이온 발생기를 갖는 기판 이송 시스템 |
KR20160065226A (ko) | 2014-11-07 | 2016-06-09 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
CN107924795B (zh) * | 2015-08-20 | 2019-10-18 | 株式会社日立高新技术 | 离子束装置以及气体场致发射离子源的清洗方法 |
JP6764288B2 (ja) * | 2016-09-12 | 2020-09-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP6843089B2 (ja) * | 2018-04-09 | 2021-03-17 | 東京エレクトロン株式会社 | 結露防止方法および処理装置 |
JP7428780B2 (ja) * | 2021-12-24 | 2024-02-06 | セメス株式会社 | 基板処理装置及び方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5796111A (en) * | 1995-10-30 | 1998-08-18 | Phrasor Scientific, Inc. | Apparatus for cleaning contaminated surfaces using energetic cluster beams |
US6332470B1 (en) * | 1997-12-30 | 2001-12-25 | Boris Fishkin | Aerosol substrate cleaner |
JPH11330033A (ja) * | 1998-05-12 | 1999-11-30 | Fraser Scient Inc | エネルギーを有するクラスタ・ビームを使用して汚染表面を洗浄する方法および装置 |
JP4149568B2 (ja) * | 1998-07-01 | 2008-09-10 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US6554950B2 (en) * | 2001-01-16 | 2003-04-29 | Applied Materials, Inc. | Method and apparatus for removal of surface contaminants from substrates in vacuum applications |
JP4802002B2 (ja) * | 2006-01-30 | 2011-10-26 | 芝浦メカトロニクス株式会社 | 基板の洗浄処理装置及び洗浄処理方法 |
JP4754408B2 (ja) * | 2006-05-25 | 2011-08-24 | 大日本スクリーン製造株式会社 | 除電装置、除電方法および該除電装置を備えた基板処理装置 |
JP4954728B2 (ja) * | 2007-01-26 | 2012-06-20 | 東京エレクトロン株式会社 | ゲートバルブの洗浄方法及び基板処理システム |
US7837805B2 (en) * | 2007-08-29 | 2010-11-23 | Micron Technology, Inc. | Methods for treating surfaces |
-
2009
- 2009-03-12 JP JP2009059331A patent/JP5295829B2/ja not_active Expired - Fee Related
-
2010
- 2010-03-10 KR KR1020117023695A patent/KR101310513B1/ko not_active IP Right Cessation
- 2010-03-10 WO PCT/JP2010/054482 patent/WO2010104207A1/ja active Application Filing
- 2010-03-10 CN CN201080011571.5A patent/CN102349137B/zh not_active Expired - Fee Related
- 2010-03-10 US US13/255,758 patent/US20120055506A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR101310513B1 (ko) | 2013-09-25 |
US20120055506A1 (en) | 2012-03-08 |
KR20110122875A (ko) | 2011-11-11 |
WO2010104207A1 (ja) | 2010-09-16 |
CN102349137A (zh) | 2012-02-08 |
JP2010212586A (ja) | 2010-09-24 |
CN102349137B (zh) | 2014-04-16 |
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