JP5291105B2 - 電界効果型トランジスタの製造方法 - Google Patents
電界効果型トランジスタの製造方法 Download PDFInfo
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- JP5291105B2 JP5291105B2 JP2010524761A JP2010524761A JP5291105B2 JP 5291105 B2 JP5291105 B2 JP 5291105B2 JP 2010524761 A JP2010524761 A JP 2010524761A JP 2010524761 A JP2010524761 A JP 2010524761A JP 5291105 B2 JP5291105 B2 JP 5291105B2
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- field effect
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000005669 field effect Effects 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- 238000000137 annealing Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910007541 Zn O Inorganic materials 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 238000005546 reactive sputtering Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 139
- 238000004544 sputter deposition Methods 0.000 abstract description 25
- 230000008569 process Effects 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 21
- 239000010409 thin film Substances 0.000 abstract description 17
- 230000007547 defect Effects 0.000 abstract description 7
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 95
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010524761A JP5291105B2 (ja) | 2008-08-15 | 2009-08-17 | 電界効果型トランジスタの製造方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008209277 | 2008-08-15 | ||
| JP2008209277 | 2008-08-15 | ||
| PCT/JP2009/064376 WO2010018875A1 (ja) | 2008-08-15 | 2009-08-17 | 電界効果型トランジスタの製造方法 |
| JP2010524761A JP5291105B2 (ja) | 2008-08-15 | 2009-08-17 | 電界効果型トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2010018875A1 JPWO2010018875A1 (ja) | 2012-01-26 |
| JP5291105B2 true JP5291105B2 (ja) | 2013-09-18 |
Family
ID=41669011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010524761A Active JP5291105B2 (ja) | 2008-08-15 | 2009-08-17 | 電界効果型トランジスタの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5291105B2 (zh) |
| KR (1) | KR101260147B1 (zh) |
| CN (2) | CN102165569B (zh) |
| TW (1) | TWI498970B (zh) |
| WO (1) | WO2010018875A1 (zh) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102906882B (zh) * | 2010-05-21 | 2015-11-25 | 株式会社半导体能源研究所 | 半导体装置及其制造方法 |
| WO2011145634A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5739257B2 (ja) | 2010-08-05 | 2015-06-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US9546416B2 (en) * | 2010-09-13 | 2017-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming crystalline oxide semiconductor film |
| KR102424181B1 (ko) | 2010-12-17 | 2022-07-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 재료 및 반도체 장치 |
| KR101459502B1 (ko) * | 2011-07-13 | 2014-11-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 박막 트랜지스터 디바이스들을 제조하는 방법들 |
| CN102683193B (zh) * | 2012-03-30 | 2014-07-23 | 京东方科技集团股份有限公司 | 晶体管的制作方法、晶体管、阵列基板以及显示装置 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006186319A (ja) * | 2004-11-10 | 2006-07-13 | Canon Inc | 発光装置及び表示装置 |
| JP2007073311A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 発光素子 |
| WO2007040194A1 (ja) * | 2005-10-05 | 2007-04-12 | Idemitsu Kosan Co., Ltd. | Ｔｆｔ基板及びｔｆｔ基板の製造方法 |
| JP2007173489A (ja) * | 2005-12-21 | 2007-07-05 | Idemitsu Kosan Co Ltd | Ｔｆｔ基板及びｔｆｔ基板の製造方法 |
| WO2008096768A1 (ja) * | 2007-02-09 | 2008-08-14 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4560502B2 (ja) * | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
| JP4999400B2 (ja) * | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
| JP5127183B2 (ja) * | 2006-08-23 | 2013-01-23 | キヤノン株式会社 | アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法 |
-
2009
- 2009-08-17 WO PCT/JP2009/064376 patent/WO2010018875A1/ja active Application Filing
- 2009-08-17 KR KR1020117003050A patent/KR101260147B1/ko active IP Right Grant
- 2009-08-17 TW TW098127552A patent/TWI498970B/zh active
- 2009-08-17 CN CN200980137848.6A patent/CN102165569B/zh active Active
- 2009-08-17 CN CN201610010064.9A patent/CN105575803B/zh active Active
- 2009-08-17 JP JP2010524761A patent/JP5291105B2/ja active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006186319A (ja) * | 2004-11-10 | 2006-07-13 | Canon Inc | 発光装置及び表示装置 |
| JP2007073311A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 発光素子 |
| WO2007040194A1 (ja) * | 2005-10-05 | 2007-04-12 | Idemitsu Kosan Co., Ltd. | Ｔｆｔ基板及びｔｆｔ基板の製造方法 |
| JP2007173489A (ja) * | 2005-12-21 | 2007-07-05 | Idemitsu Kosan Co Ltd | Ｔｆｔ基板及びｔｆｔ基板の製造方法 |
| WO2008096768A1 (ja) * | 2007-02-09 | 2008-08-14 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102165569A (zh) | 2011-08-24 |
| TWI498970B (zh) | 2015-09-01 |
| KR101260147B1 (ko) | 2013-05-02 |
| KR20110028392A (ko) | 2011-03-17 |
| JPWO2010018875A1 (ja) | 2012-01-26 |
| CN105575803A (zh) | 2016-05-11 |
| CN102165569B (zh) | 2016-08-03 |
| WO2010018875A1 (ja) | 2010-02-18 |
| TW201017756A (en) | 2010-05-01 |
| CN105575803B (zh) | 2018-11-09 |
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