JP5289667B2 - ワンチップ高電圧光電池の製造方法 - Google Patents

ワンチップ高電圧光電池の製造方法 Download PDF

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Publication number
JP5289667B2
JP5289667B2 JP2005087035A JP2005087035A JP5289667B2 JP 5289667 B2 JP5289667 B2 JP 5289667B2 JP 2005087035 A JP2005087035 A JP 2005087035A JP 2005087035 A JP2005087035 A JP 2005087035A JP 5289667 B2 JP5289667 B2 JP 5289667B2
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Japan
Prior art keywords
silicon
hole
printed circuit
circuit board
layer electrode
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Expired - Fee Related
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JP2005087035A
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Japanese (ja)
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JP2006237543A (ja
JP2006237543A5 (enExample
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三郎 下川
俊彦 川口
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Geosystem Co Ltd Japan
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Geosystem Co Ltd Japan
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Priority to JP2005087035A priority Critical patent/JP5289667B2/ja
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Publication of JP2006237543A5 publication Critical patent/JP2006237543A5/ja
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
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JP2005087035A 2005-02-25 2005-02-25 ワンチップ高電圧光電池の製造方法 Expired - Fee Related JP5289667B2 (ja)

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JP2005087035A JP5289667B2 (ja) 2005-02-25 2005-02-25 ワンチップ高電圧光電池の製造方法

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JP2005087035A JP5289667B2 (ja) 2005-02-25 2005-02-25 ワンチップ高電圧光電池の製造方法

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JP2006237543A JP2006237543A (ja) 2006-09-07
JP2006237543A5 JP2006237543A5 (enExample) 2007-05-17
JP5289667B2 true JP5289667B2 (ja) 2013-09-11

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JP2005087035A Expired - Fee Related JP5289667B2 (ja) 2005-02-25 2005-02-25 ワンチップ高電圧光電池の製造方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8084684B2 (en) * 2006-10-09 2011-12-27 Solexel, Inc. Three-dimensional thin-film solar cells
JP5132191B2 (ja) * 2007-01-30 2013-01-30 株式会社ゼオシステム ワンチップ高電圧光電池の製造方法
JP4989549B2 (ja) * 2007-08-24 2012-08-01 三洋電機株式会社 太陽電池及び太陽電池モジュール
JP5242338B2 (ja) * 2008-10-29 2013-07-24 シャープ株式会社 太陽電池モジュールの製造方法および太陽電池モジュールの製造装置
JP2012060018A (ja) * 2010-09-10 2012-03-22 Sharp Corp 太陽電池モジュールの製造方法
JP5232213B2 (ja) * 2010-12-03 2013-07-10 シャープ株式会社 裏面電極型太陽電池セル、太陽電池モジュール、太陽電池ウェハおよび太陽電池モジュールの製造方法
JP2015050413A (ja) * 2013-09-04 2015-03-16 アン，ヒョン・ウー Ｐｃｂを利用した太陽電池
US9666733B2 (en) 2013-09-04 2017-05-30 Hyeon Woo AHN Solar cell using printed circuit board

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5394194A (en) * 1977-01-28 1978-08-17 Toshiba Corp Substrate for photoelectric transducer
JPH01125563U (enExample) * 1988-02-22 1989-08-28
JPH01176957U (enExample) * 1988-06-02 1989-12-18
JPH05304282A (ja) * 1991-07-25 1993-11-16 Nec Corp 集積回路装置
JPH08298334A (ja) * 1995-04-26 1996-11-12 Mitsubishi Electric Corp 太陽電池板
JPH1140832A (ja) * 1997-07-17 1999-02-12 Ion Kogaku Kenkyusho:Kk 薄膜太陽電池およびその製造方法
DE19854269B4 (de) * 1998-11-25 2004-07-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Dünnschichtsolarzellenanordnung sowie Verfahren zur Herstellung derselben
JP2001007236A (ja) * 1999-06-17 2001-01-12 Nitto Denko Corp ウェハー状積層体および半導体素子パッケージならびにウェハー状積層体の製造方法
JP2001196331A (ja) * 2000-01-12 2001-07-19 Nec Kansai Ltd チップサイズパッケージの製造方法
JP2003101049A (ja) * 2001-09-27 2003-04-04 Sanyo Electric Co Ltd 光電変換装置の製造方法
JP3922172B2 (ja) * 2002-12-17 2007-05-30 トヨタ自動車株式会社 電子部品の放熱性検査方法及びその装置
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
JP2007019334A (ja) * 2005-07-08 2007-01-25 Mitsubishi Electric Corp 太陽電池装置

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