JP5285235B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5285235B2 JP5285235B2 JP2007116797A JP2007116797A JP5285235B2 JP 5285235 B2 JP5285235 B2 JP 5285235B2 JP 2007116797 A JP2007116797 A JP 2007116797A JP 2007116797 A JP2007116797 A JP 2007116797A JP 5285235 B2 JP5285235 B2 JP 5285235B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- region
- semiconductor
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Element Separation (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007116797A JP5285235B2 (ja) | 2006-04-28 | 2007-04-26 | 半導体装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006126636 | 2006-04-28 | ||
JP2006126636 | 2006-04-28 | ||
JP2007116797A JP5285235B2 (ja) | 2006-04-28 | 2007-04-26 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013114819A Division JP2013229612A (ja) | 2006-04-28 | 2013-05-31 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007318112A JP2007318112A (ja) | 2007-12-06 |
JP2007318112A5 JP2007318112A5 (zh) | 2010-05-27 |
JP5285235B2 true JP5285235B2 (ja) | 2013-09-11 |
Family
ID=38851659
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007116797A Expired - Fee Related JP5285235B2 (ja) | 2006-04-28 | 2007-04-26 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5285235B2 (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8643124B2 (en) | 2007-05-25 | 2014-02-04 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8633537B2 (en) | 2007-05-25 | 2014-01-21 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US9449831B2 (en) | 2007-05-25 | 2016-09-20 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US20090179253A1 (en) | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8940645B2 (en) | 2007-05-25 | 2015-01-27 | Cypress Semiconductor Corporation | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
JP2009302310A (ja) * | 2008-06-13 | 2009-12-24 | Sharp Corp | メモリ素子、半導体記憶装置及びその動作方法 |
KR101591613B1 (ko) * | 2009-10-21 | 2016-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR102026603B1 (ko) * | 2010-02-05 | 2019-10-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8519387B2 (en) * | 2010-07-26 | 2013-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing |
KR20130102581A (ko) * | 2010-09-03 | 2013-09-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전계 효과 트랜지스터 및 반도체 장치의 제조 방법 |
TWI593115B (zh) | 2010-11-11 | 2017-07-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
WO2012090799A1 (en) | 2010-12-28 | 2012-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US9911858B2 (en) * | 2010-12-28 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI570809B (zh) * | 2011-01-12 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8421071B2 (en) * | 2011-01-13 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
TWI534897B (zh) * | 2011-01-14 | 2016-05-21 | 賽普拉斯半導體公司 | 具有多重氮氧化物層之氧化物-氮化物-氧化物堆疊 |
TWI787452B (zh) * | 2011-01-26 | 2022-12-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US9023684B2 (en) * | 2011-03-04 | 2015-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US8541781B2 (en) * | 2011-03-10 | 2013-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US8797303B2 (en) * | 2011-03-21 | 2014-08-05 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
CN102213693B (zh) * | 2011-04-08 | 2012-10-10 | 北京大学 | 无衬底引出半导体器件的栅介质层陷阱密度的测试方法 |
US9111795B2 (en) | 2011-04-29 | 2015-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor connected to memory element through oxide semiconductor film |
US8946066B2 (en) * | 2011-05-11 | 2015-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US9105749B2 (en) * | 2011-05-13 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9171840B2 (en) * | 2011-05-26 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP5814712B2 (ja) * | 2011-09-15 | 2015-11-17 | 日本放送協会 | 薄膜デバイスの製造方法 |
TWI567985B (zh) * | 2011-10-21 | 2017-01-21 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US9379254B2 (en) | 2011-11-18 | 2016-06-28 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
US9653614B2 (en) * | 2012-01-23 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102414469B1 (ko) | 2014-03-14 | 2022-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 회로 시스템 |
KR102329498B1 (ko) * | 2014-09-04 | 2021-11-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN111063731B (zh) * | 2019-12-06 | 2023-07-11 | 国家纳米科学中心 | Cnt-igzo薄膜异质结双极晶体管及其制备方法和应用 |
JP7057400B2 (ja) * | 2020-08-20 | 2022-04-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3302187B2 (ja) * | 1994-08-18 | 2002-07-15 | キヤノン株式会社 | 薄膜トランジスタ、これを用いた半導体装置、液晶表示装置 |
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
US6599813B2 (en) * | 2001-06-29 | 2003-07-29 | International Business Machines Corporation | Method of forming shallow trench isolation for thin silicon-on-insulator substrates |
JP4942950B2 (ja) * | 2004-05-28 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2007
- 2007-04-26 JP JP2007116797A patent/JP5285235B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2007318112A (ja) | 2007-12-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5947935B2 (ja) | 半導体装置の作製方法 | |
JP5285235B2 (ja) | 半導体装置 | |
US8513072B2 (en) | Manufacturing method of semiconductor device with element isolation region formed within | |
JP5216360B2 (ja) | 半導体装置 | |
JP5252947B2 (ja) | 半導体装置の作製方法 | |
US7696562B2 (en) | Semiconductor device | |
US8294157B2 (en) | Semiconductor device and manufacturing method thereof | |
JP5461788B2 (ja) | 半導体装置及びその作製方法 | |
KR20100095397A (ko) | 불휘발성 반도체 기억장치 및 그 제작 방법 | |
JP5142550B2 (ja) | 半導体装置の作製方法 | |
JP5674856B2 (ja) | 半導体装置及び半導体装置の作製方法 | |
JP5271504B2 (ja) | 半導体装置の作製方法 | |
JP5137424B2 (ja) | 半導体装置及びその作製方法 | |
JP5259977B2 (ja) | 半導体装置及び半導体装置の作製方法 | |
JP5105915B2 (ja) | 半導体装置及びその作製方法 | |
JP2007006464A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100412 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100412 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120912 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120918 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121101 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130507 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130531 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5285235 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |