JP5285235B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP5285235B2
JP5285235B2 JP2007116797A JP2007116797A JP5285235B2 JP 5285235 B2 JP5285235 B2 JP 5285235B2 JP 2007116797 A JP2007116797 A JP 2007116797A JP 2007116797 A JP2007116797 A JP 2007116797A JP 5285235 B2 JP5285235 B2 JP 5285235B2
Authority
JP
Japan
Prior art keywords
film
insulating film
region
semiconductor
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007116797A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007318112A (ja
JP2007318112A5 (zh
Inventor
敦生 磯部
圭恵 高野
康行 荒井
郁子 寺澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2007116797A priority Critical patent/JP5285235B2/ja
Publication of JP2007318112A publication Critical patent/JP2007318112A/ja
Publication of JP2007318112A5 publication Critical patent/JP2007318112A5/ja
Application granted granted Critical
Publication of JP5285235B2 publication Critical patent/JP5285235B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
JP2007116797A 2006-04-28 2007-04-26 半導体装置 Expired - Fee Related JP5285235B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007116797A JP5285235B2 (ja) 2006-04-28 2007-04-26 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006126636 2006-04-28
JP2006126636 2006-04-28
JP2007116797A JP5285235B2 (ja) 2006-04-28 2007-04-26 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013114819A Division JP2013229612A (ja) 2006-04-28 2013-05-31 半導体装置

Publications (3)

Publication Number Publication Date
JP2007318112A JP2007318112A (ja) 2007-12-06
JP2007318112A5 JP2007318112A5 (zh) 2010-05-27
JP5285235B2 true JP5285235B2 (ja) 2013-09-11

Family

ID=38851659

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007116797A Expired - Fee Related JP5285235B2 (ja) 2006-04-28 2007-04-26 半導体装置

Country Status (1)

Country Link
JP (1) JP5285235B2 (zh)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8643124B2 (en) 2007-05-25 2014-02-04 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8633537B2 (en) 2007-05-25 2014-01-21 Cypress Semiconductor Corporation Memory transistor with multiple charge storing layers and a high work function gate electrode
US9449831B2 (en) 2007-05-25 2016-09-20 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US20090179253A1 (en) 2007-05-25 2009-07-16 Cypress Semiconductor Corporation Oxide-nitride-oxide stack having multiple oxynitride layers
US8940645B2 (en) 2007-05-25 2015-01-27 Cypress Semiconductor Corporation Radical oxidation process for fabricating a nonvolatile charge trap memory device
JP2009302310A (ja) * 2008-06-13 2009-12-24 Sharp Corp メモリ素子、半導体記憶装置及びその動作方法
KR101591613B1 (ko) * 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102026603B1 (ko) * 2010-02-05 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8519387B2 (en) * 2010-07-26 2013-08-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing
KR20130102581A (ko) * 2010-09-03 2013-09-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 반도체 장치의 제조 방법
TWI593115B (zh) 2010-11-11 2017-07-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9911858B2 (en) * 2010-12-28 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI570809B (zh) * 2011-01-12 2017-02-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8421071B2 (en) * 2011-01-13 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Memory device
TWI534897B (zh) * 2011-01-14 2016-05-21 賽普拉斯半導體公司 具有多重氮氧化物層之氧化物-氮化物-氧化物堆疊
TWI787452B (zh) * 2011-01-26 2022-12-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9023684B2 (en) * 2011-03-04 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8541781B2 (en) * 2011-03-10 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8797303B2 (en) * 2011-03-21 2014-08-05 Qualcomm Mems Technologies, Inc. Amorphous oxide semiconductor thin film transistor fabrication method
CN102213693B (zh) * 2011-04-08 2012-10-10 北京大学 无衬底引出半导体器件的栅介质层陷阱密度的测试方法
US9111795B2 (en) 2011-04-29 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor connected to memory element through oxide semiconductor film
US8946066B2 (en) * 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US9105749B2 (en) * 2011-05-13 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9171840B2 (en) * 2011-05-26 2015-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5814712B2 (ja) * 2011-09-15 2015-11-17 日本放送協会 薄膜デバイスの製造方法
TWI567985B (zh) * 2011-10-21 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US9379254B2 (en) 2011-11-18 2016-06-28 Qualcomm Mems Technologies, Inc. Amorphous oxide semiconductor thin film transistor fabrication method
US9653614B2 (en) * 2012-01-23 2017-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102414469B1 (ko) 2014-03-14 2022-06-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 회로 시스템
KR102329498B1 (ko) * 2014-09-04 2021-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN111063731B (zh) * 2019-12-06 2023-07-11 国家纳米科学中心 Cnt-igzo薄膜异质结双极晶体管及其制备方法和应用
JP7057400B2 (ja) * 2020-08-20 2022-04-19 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3302187B2 (ja) * 1994-08-18 2002-07-15 キヤノン株式会社 薄膜トランジスタ、これを用いた半導体装置、液晶表示装置
JP2003050405A (ja) * 2000-11-15 2003-02-21 Matsushita Electric Ind Co Ltd 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル
US6599813B2 (en) * 2001-06-29 2003-07-29 International Business Machines Corporation Method of forming shallow trench isolation for thin silicon-on-insulator substrates
JP4942950B2 (ja) * 2004-05-28 2012-05-30 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2007318112A (ja) 2007-12-06

Similar Documents

Publication Publication Date Title
JP5947935B2 (ja) 半導体装置の作製方法
JP5285235B2 (ja) 半導体装置
US8513072B2 (en) Manufacturing method of semiconductor device with element isolation region formed within
JP5216360B2 (ja) 半導体装置
JP5252947B2 (ja) 半導体装置の作製方法
US7696562B2 (en) Semiconductor device
US8294157B2 (en) Semiconductor device and manufacturing method thereof
JP5461788B2 (ja) 半導体装置及びその作製方法
KR20100095397A (ko) 불휘발성 반도체 기억장치 및 그 제작 방법
JP5142550B2 (ja) 半導体装置の作製方法
JP5674856B2 (ja) 半導体装置及び半導体装置の作製方法
JP5271504B2 (ja) 半導体装置の作製方法
JP5137424B2 (ja) 半導体装置及びその作製方法
JP5259977B2 (ja) 半導体装置及び半導体装置の作製方法
JP5105915B2 (ja) 半導体装置及びその作製方法
JP2007006464A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100412

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100412

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120912

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120918

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121101

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130507

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130531

R150 Certificate of patent or registration of utility model

Ref document number: 5285235

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees