JP5284182B2 - 基板処理装置および半導体装置の製造方法 - Google Patents

基板処理装置および半導体装置の製造方法

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Publication number
JP5284182B2
JP5284182B2 JP2009134148A JP2009134148A JP5284182B2 JP 5284182 B2 JP5284182 B2 JP 5284182B2 JP 2009134148 A JP2009134148 A JP 2009134148A JP 2009134148 A JP2009134148 A JP 2009134148A JP 5284182 B2 JP5284182 B2 JP 5284182B2
Authority
JP
Japan
Prior art keywords
gas
inner tube
substrate
exhaust port
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009134148A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010050439A5 (https=
JP2010050439A (ja
Inventor
慎太郎 小倉
雄二 竹林
篤彦 足谷
格 岡田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Hitachi Kokusai Electric Inc
Kokusai Denki Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc, Kokusai Denki Electric Inc filed Critical Hitachi Kokusai Electric Inc
Priority to JP2009134148A priority Critical patent/JP5284182B2/ja
Priority to KR1020090065232A priority patent/KR101063855B1/ko
Priority to US12/458,816 priority patent/US20100083898A1/en
Publication of JP2010050439A publication Critical patent/JP2010050439A/ja
Publication of JP2010050439A5 publication Critical patent/JP2010050439A5/ja
Application granted granted Critical
Publication of JP5284182B2 publication Critical patent/JP5284182B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69395—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing zirconium, e.g. ZrO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2009134148A 2008-07-23 2009-06-03 基板処理装置および半導体装置の製造方法 Active JP5284182B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009134148A JP5284182B2 (ja) 2008-07-23 2009-06-03 基板処理装置および半導体装置の製造方法
KR1020090065232A KR101063855B1 (ko) 2008-07-23 2009-07-17 기판 처리 장치
US12/458,816 US20100083898A1 (en) 2008-07-23 2009-07-23 Substrate processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008190241 2008-07-23
JP2008190241 2008-07-23
JP2009134148A JP5284182B2 (ja) 2008-07-23 2009-06-03 基板処理装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2010050439A JP2010050439A (ja) 2010-03-04
JP2010050439A5 JP2010050439A5 (https=) 2012-07-12
JP5284182B2 true JP5284182B2 (ja) 2013-09-11

Family

ID=42067253

Family Applications (1)

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Country Status (3)

Country Link
US (1) US20100083898A1 (https=)
JP (1) JP5284182B2 (https=)
KR (1) KR101063855B1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180029915A (ko) 2016-09-13 2018-03-21 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR20180034253A (ko) 2016-09-27 2018-04-04 도쿄엘렉트론가부시키가이샤 가스 도입 기구 및 처리 장치
KR20180102498A (ko) 2017-03-07 2018-09-17 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR20190034093A (ko) 2017-09-22 2019-04-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
US11976362B2 (en) 2020-09-14 2024-05-07 Kioxia Corporation Substrate processing apparatus and method for manufacturing semiconductor device

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US20090197424A1 (en) * 2008-01-31 2009-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5222652B2 (ja) * 2008-07-30 2013-06-26 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5616737B2 (ja) * 2009-11-20 2014-10-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5529634B2 (ja) * 2010-06-10 2014-06-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板の製造方法
JP5687547B2 (ja) * 2010-06-28 2015-03-18 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5735304B2 (ja) * 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
JP5595963B2 (ja) * 2011-03-31 2014-09-24 東京エレクトロン株式会社 縦型バッチ式成膜装置
JP5720406B2 (ja) * 2011-05-10 2015-05-20 東京エレクトロン株式会社 ガス供給装置、熱処理装置、ガス供給方法及び熱処理方法
ES2467145T3 (es) * 2011-07-18 2014-06-12 Essilor International (Compagnie Générale d'Optique) Máquina para revestir un artículo óptico con una composición de revestimiento antisuciedad y procedimiento para utilizar la máquina
KR101364701B1 (ko) * 2011-11-17 2014-02-20 주식회사 유진테크 위상차를 갖는 반응가스를 공급하는 기판 처리 장치
JP5921168B2 (ja) * 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
KR20140081067A (ko) * 2012-12-21 2014-07-01 삼성전자주식회사 웨이퍼 처리 장치 및 웨이퍼 처리 방법
KR102123942B1 (ko) * 2014-09-30 2020-06-17 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 반응관
KR101682153B1 (ko) * 2015-04-14 2016-12-02 주식회사 유진테크 기판처리장치
WO2017037937A1 (ja) * 2015-09-04 2017-03-09 株式会社日立国際電気 反応管、基板処理装置および半導体装置の製造方法
KR101760316B1 (ko) * 2015-09-11 2017-07-21 주식회사 유진테크 기판처리장치
JP6568828B2 (ja) * 2016-08-01 2019-08-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ティーチング治具、基板処理装置及びティーチング方法
JP6602332B2 (ja) * 2017-03-28 2019-11-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR101910085B1 (ko) * 2017-06-08 2018-10-22 주식회사 유진테크 기판처리장치
JP6867496B2 (ja) * 2017-08-25 2021-04-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、反応管、基板処理方法、および、半導体装置の製造方法
JP6820816B2 (ja) * 2017-09-26 2021-01-27 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、反応管、半導体装置の製造方法、及びプログラム
US10903096B2 (en) * 2018-04-06 2021-01-26 Varian Semiconductor Equipment Associates, Inc. System and apparatus for process chamber window cooling
KR102349037B1 (ko) * 2018-09-17 2022-01-10 주식회사 원익아이피에스 웨이퍼 공정용 리액터의 가스 제어 장치
KR102644283B1 (ko) * 2019-10-16 2024-03-06 주식회사 원익아이피에스 기판처리장치
JP7446189B2 (ja) * 2020-09-17 2024-03-08 東京エレクトロン株式会社 処理装置及び処理方法
JP7290684B2 (ja) * 2021-03-26 2023-06-13 株式会社Kokusai Electric 反応管、処理装置、および半導体装置の製造方法
US12060651B2 (en) * 2021-05-11 2024-08-13 Applied Materials, Inc. Chamber architecture for epitaxial deposition and advanced epitaxial film applications
CN116516316A (zh) * 2022-01-24 2023-08-01 盛美半导体设备(上海)股份有限公司 用于薄膜沉积的炉管、薄膜沉积方法及加工设备
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Publication number Priority date Publication date Assignee Title
KR20180029915A (ko) 2016-09-13 2018-03-21 도쿄엘렉트론가부시키가이샤 기판 처리 장치
US10475641B2 (en) 2016-09-13 2019-11-12 Tokyo Electron Limited Substrate processing apparatus
KR20180034253A (ko) 2016-09-27 2018-04-04 도쿄엘렉트론가부시키가이샤 가스 도입 기구 및 처리 장치
KR20180102498A (ko) 2017-03-07 2018-09-17 도쿄엘렉트론가부시키가이샤 기판 처리 장치
JP2018148099A (ja) * 2017-03-07 2018-09-20 東京エレクトロン株式会社 基板処理装置
US11208721B2 (en) 2017-03-07 2021-12-28 Tokyo Electron Limited Substrate processing apparatus
KR20190034093A (ko) 2017-09-22 2019-04-01 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
US11560628B2 (en) 2017-09-22 2023-01-24 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US12054828B2 (en) 2017-09-22 2024-08-06 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US12281389B2 (en) 2017-09-22 2025-04-22 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US11976362B2 (en) 2020-09-14 2024-05-07 Kioxia Corporation Substrate processing apparatus and method for manufacturing semiconductor device

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Publication number Publication date
JP2010050439A (ja) 2010-03-04
KR101063855B1 (ko) 2011-09-08
KR20100010906A (ko) 2010-02-02
US20100083898A1 (en) 2010-04-08

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