JP5264750B2 - 銅／ルテニウム／タンタル基板のｃｍｐ - Google Patents

銅／ルテニウム／タンタル基板のｃｍｐ Download PDF

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Publication number
JP5264750B2
JP5264750B2 JP2009535365A JP2009535365A JP5264750B2 JP 5264750 B2 JP5264750 B2 JP 5264750B2 JP 2009535365 A JP2009535365 A JP 2009535365A JP 2009535365 A JP2009535365 A JP 2009535365A JP 5264750 B2 JP5264750 B2 JP 5264750B2
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JP
Japan
Prior art keywords
polishing composition
polishing
copper
acid
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009535365A
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English (en)
Japanese (ja)
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JP2010509755A (ja
JP2010509755A5 (enExample
Inventor
ブルジック，ブラスタ
チョウ，レンチエ
トンプソン，クリストファー
フィーニー，ポール
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
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Publication of JP2010509755A publication Critical patent/JP2010509755A/ja
Publication of JP2010509755A5 publication Critical patent/JP2010509755A5/ja
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009535365A 2006-11-02 2007-11-01 銅／ルテニウム／タンタル基板のｃｍｐ Expired - Fee Related JP5264750B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/591,730 2006-11-02
US11/591,730 US20080105652A1 (en) 2006-11-02 2006-11-02 CMP of copper/ruthenium/tantalum substrates
PCT/US2007/023576 WO2008057593A1 (en) 2006-11-02 2007-11-01 Cmp of copper/ruthenium/tantalum substrates

Publications (3)

Publication Number Publication Date
JP2010509755A JP2010509755A (ja) 2010-03-25
JP2010509755A5 JP2010509755A5 (enExample) 2010-12-16
JP5264750B2 true JP5264750B2 (ja) 2013-08-14

Family

ID=39358870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009535365A Expired - Fee Related JP5264750B2 (ja) 2006-11-02 2007-11-01 銅／ルテニウム／タンタル基板のｃｍｐ

Country Status (10)

Country Link
US (1) US20080105652A1 (enExample)
EP (1) EP2087061B1 (enExample)
JP (1) JP5264750B2 (enExample)
KR (1) KR101250568B1 (enExample)
CN (1) CN101535442B (enExample)
IL (1) IL198373A (enExample)
MY (1) MY149382A (enExample)
SG (1) SG176441A1 (enExample)
TW (1) TWI358451B (enExample)
WO (1) WO2008057593A1 (enExample)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100814416B1 (ko) * 2006-09-28 2008-03-18 삼성전자주식회사 고 평탄화 슬러리 조성물 및 이를 이용한 화학 기계적 연마방법
JP5287720B2 (ja) * 2007-07-05 2013-09-11 日立化成株式会社 金属膜用研磨液及び研磨方法
US8008202B2 (en) * 2007-08-01 2011-08-30 Cabot Microelectronics Corporation Ruthenium CMP compositions and methods
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
US20090124173A1 (en) * 2007-11-09 2009-05-14 Cabot Microelectronics Corporation Compositions and methods for ruthenium and tantalum barrier cmp
CN101665661A (zh) * 2008-09-05 2010-03-10 安集微电子科技(上海)有限公司 胺类化合物的应用以及一种化学机械抛光液
CN101724347A (zh) * 2008-10-10 2010-06-09 安集微电子（上海）有限公司 一种化学机械抛光液
WO2010123300A2 (en) * 2009-04-22 2010-10-28 Lg Chem, Ltd. Slurry for chemical mechanical polishing
KR101701537B1 (ko) * 2009-05-08 2017-02-01 바스프 에스이 루테늄 비롯한 귀금속의 화학적 기계적 평탄화를 위한 산화 입자계 슬러리
JP5587620B2 (ja) * 2010-01-25 2014-09-10 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US20130005149A1 (en) * 2010-02-22 2013-01-03 Basf Se Chemical-mechanical planarization of substrates containing copper, ruthenium, and tantalum layers
JP5492603B2 (ja) * 2010-03-02 2014-05-14 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
JP5877940B2 (ja) * 2010-04-08 2016-03-08 株式会社フジミインコーポレーテッド 銅及びシリコンが表面に露出したウェーハの研磨方法
CN102373014A (zh) * 2010-08-24 2012-03-14 安集微电子（上海）有限公司 一种化学机械抛光液
KR101907860B1 (ko) * 2010-10-07 2018-10-15 바스프 에스이 수성 연마 조성물 및 패턴화 또는 비패턴화 저-ｋ 유전층을 갖는 기판의 화학적 기계적 연마 방법
US8623766B2 (en) * 2011-09-20 2014-01-07 Cabot Microelectronics Corporation Composition and method for polishing aluminum semiconductor substrates
KR102136432B1 (ko) * 2012-06-11 2020-07-21 캐보트 마이크로일렉트로닉스 코포레이션 몰리브덴을 연마하기 위한 조성물 및 방법
US8821215B2 (en) * 2012-09-07 2014-09-02 Cabot Microelectronics Corporation Polypyrrolidone polishing composition and method
JP6029916B2 (ja) * 2012-09-28 2016-11-24 株式会社フジミインコーポレーテッド 研磨用組成物
US20140134351A1 (en) 2012-11-09 2014-05-15 Applied Materials, Inc. Method to deposit cvd ruthenium
US9196283B1 (en) 2013-03-13 2015-11-24 Western Digital (Fremont), Llc Method for providing a magnetic recording transducer using a chemical buffer
US10647900B2 (en) 2013-07-11 2020-05-12 Basf Se Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
US9076846B2 (en) 2013-11-04 2015-07-07 GlobalFoundries, Inc. Methods for fabricating integrated circuits using surface modification to selectively inhibit etching
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
CN104745086A (zh) * 2013-12-25 2015-07-01 安集微电子（上海）有限公司 一种用于阻挡层平坦化的化学机械抛光液及其使用方法
JP6817186B6 (ja) * 2014-07-15 2021-02-10 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 化学機械研磨（ｃｍｐ）組成物
US9299585B2 (en) * 2014-07-28 2016-03-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method for chemical mechanical polishing substrates containing ruthenium and copper
TWI535835B (zh) * 2015-02-05 2016-06-01 盟智科技股份有限公司 化學機械拋光漿液
US10160884B2 (en) 2015-03-23 2018-12-25 Versum Materials Us, Llc Metal compound chemically anchored colloidal particles and methods of production and use thereof
JP2017038070A (ja) * 2016-09-28 2017-02-16 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
TWI664280B (zh) * 2016-10-11 2019-07-01 Fujifilm Electronic Materials U.S.A., Inc. 高溫cmp組成物及用於使用其之方法
US10522398B2 (en) 2017-08-31 2019-12-31 International Business Machines Corporation Modulating metal interconnect surface topography
US11043151B2 (en) * 2017-10-03 2021-06-22 Cmc Materials, Inc. Surface treated abrasive particles for tungsten buff applications
EP3775076A4 (en) * 2018-03-28 2021-12-22 FUJIFILM Electronic Materials U.S.A, Inc. CHEMICAL-MECHANICAL POLISHING SUSPENSION WITH RUTHENIUM BARRIER
US11286403B2 (en) 2018-07-20 2022-03-29 Dongjin Semichem Co., Ltd Chemical mechanical polishing composition, chemical mechanical polishing slurry and method for polishing substrate
KR102808137B1 (ko) * 2018-07-20 2025-05-16 주식회사 동진쎄미켐 화학적 기계적 연마 조성물, 화학적 기계적 연마 슬러리 및 기판의 연마 방법
EP3894496A1 (en) 2018-12-12 2021-10-20 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
EP3894494A1 (en) 2018-12-12 2021-10-20 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
EP3894495A1 (en) 2018-12-12 2021-10-20 Basf Se Chemical mechanical polishing of substrates containing copper and ruthenium
KR20200143144A (ko) 2019-06-14 2020-12-23 삼성전자주식회사 슬러리 조성물 및 이를 이용한 집적회로 소자의 제조 방법
CN113122145A (zh) * 2019-12-31 2021-07-16 安集微电子（上海）有限公司 一种化学机械抛光液
JP7715720B2 (ja) * 2020-02-13 2025-07-30 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 研磨組成物及びその使用方法
WO2021162980A1 (en) 2020-02-13 2021-08-19 Fujifilm Electronic Materials U.S.A, Inc. Polishing compositions and methods of use thereof
CN112872916B (zh) * 2020-12-28 2023-03-10 富联裕展科技(深圳)有限公司 抛光系统及抛光方法
WO2025231281A1 (en) * 2024-05-03 2025-11-06 Versum Materials Us, Llc Cmp formulations and methods for polishing ruthenium films

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5156672A (en) * 1990-07-13 1992-10-20 Mcgean-Rohco, Inc. Mechanical plating paste
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6248143B1 (en) * 1998-01-27 2001-06-19 Showa Denko Kabushiki Kaisha Composition for polishing glass and polishing method
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
CN100335580C (zh) * 1999-08-13 2007-09-05 卡伯特微电子公司 含有阻化化合物的抛光系统及其使用方法
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
JP2001115146A (ja) * 1999-10-18 2001-04-24 Tokuyama Corp バリア膜用研磨剤
JP2001187876A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
US7582564B2 (en) * 2001-03-14 2009-09-01 Applied Materials, Inc. Process and composition for conductive material removal by electrochemical mechanical polishing
US6811680B2 (en) * 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7232514B2 (en) * 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
US20030189186A1 (en) * 2002-03-29 2003-10-09 Everlight Usa, Inc. Chemical-mechanical polishing composition for metal layers
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US6974777B2 (en) * 2002-06-07 2005-12-13 Cabot Microelectronics Corporation CMP compositions for low-k dielectric materials
US20040007690A1 (en) * 2002-07-12 2004-01-15 Cabot Microelectronics Corp. Methods for polishing fiber optic connectors
US7485241B2 (en) * 2003-09-11 2009-02-03 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US20050079803A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition having PVNO and associated method for use
US20050076580A1 (en) * 2003-10-10 2005-04-14 Air Products And Chemicals, Inc. Polishing composition and use thereof
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US20050211950A1 (en) * 2004-03-24 2005-09-29 Cabot Microelectronics Corporation Chemical-mechanical polishing composition and method for using the same
US7790618B2 (en) * 2004-12-22 2010-09-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective slurry for chemical mechanical polishing

Also Published As

Publication number Publication date
EP2087061B1 (en) 2012-08-22
EP2087061A1 (en) 2009-08-12
JP2010509755A (ja) 2010-03-25
KR20090086421A (ko) 2009-08-12
US20080105652A1 (en) 2008-05-08
TW200833826A (en) 2008-08-16
CN101535442B (zh) 2013-07-03
WO2008057593A1 (en) 2008-05-15
MY149382A (en) 2013-08-30
EP2087061A4 (en) 2011-02-09
IL198373A (en) 2014-03-31
SG176441A1 (en) 2011-12-29
IL198373A0 (en) 2010-02-17
KR101250568B1 (ko) 2013-04-03
TWI358451B (en) 2012-02-21
CN101535442A (zh) 2009-09-16

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