JP5262069B2 - 電気素子デバイス及び電気素子デバイスの製造方法 - Google Patents

電気素子デバイス及び電気素子デバイスの製造方法 Download PDF

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JP5262069B2
JP5262069B2 JP2007285378A JP2007285378A JP5262069B2 JP 5262069 B2 JP5262069 B2 JP 5262069B2 JP 2007285378 A JP2007285378 A JP 2007285378A JP 2007285378 A JP2007285378 A JP 2007285378A JP 5262069 B2 JP5262069 B2 JP 5262069B2
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insulating film
protective insulating
electrode
protective
film
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JP2009117416A (ja
JP2009117416A5 (enExample
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靖雄 腰塚
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Casio Computer Co Ltd
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Casio Computer Co Ltd
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JP2007285378A 2007-11-01 2007-11-01 電気素子デバイス及び電気素子デバイスの製造方法 Expired - Fee Related JP5262069B2 (ja)

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JP2007285378A JP5262069B2 (ja) 2007-11-01 2007-11-01 電気素子デバイス及び電気素子デバイスの製造方法

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JP2007285378A JP5262069B2 (ja) 2007-11-01 2007-11-01 電気素子デバイス及び電気素子デバイスの製造方法

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JP2009117416A JP2009117416A (ja) 2009-05-28
JP2009117416A5 JP2009117416A5 (enExample) 2010-11-04
JP5262069B2 true JP5262069B2 (ja) 2013-08-14

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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011048925A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9252279B2 (en) * 2011-08-31 2016-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN110660816B (zh) * 2018-06-29 2022-06-10 京东方科技集团股份有限公司 一种平板探测器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130560A (ja) * 1985-12-03 1987-06-12 Fujitsu Ltd 密着型イメ−ジセンサの構造
JPH0745806A (ja) * 1993-08-03 1995-02-14 Matsushita Electron Corp 固体撮像装置およびその製造方法
JP3430759B2 (ja) * 1995-11-24 2003-07-28 ソニー株式会社 固体撮像装置の製造方法及び固体撮像装置
JP3587131B2 (ja) * 2000-05-24 2004-11-10 カシオ計算機株式会社 フォトセンサアレイおよびその製造方法
JP2004200490A (ja) * 2002-12-19 2004-07-15 Casio Comput Co Ltd 撮像装置及びその駆動方法
JP4974500B2 (ja) * 2004-09-15 2012-07-11 株式会社半導体エネルギー研究所 半導体装置、モジュール及び電子機器

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