JP5255739B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP5255739B2 JP5255739B2 JP2000243194A JP2000243194A JP5255739B2 JP 5255739 B2 JP5255739 B2 JP 5255739B2 JP 2000243194 A JP2000243194 A JP 2000243194A JP 2000243194 A JP2000243194 A JP 2000243194A JP 5255739 B2 JP5255739 B2 JP 5255739B2
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- Prior art keywords
- film
- laser
- laser light
- laser beam
- energy intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims description 76
- 230000001678 irradiating effect Effects 0.000 claims description 12
- 238000002425 crystallisation Methods 0.000 claims description 9
- 230000008025 crystallization Effects 0.000 claims description 9
- 230000002238 attenuated effect Effects 0.000 claims description 8
- 239000010408 film Substances 0.000 description 183
- 239000013078 crystal Substances 0.000 description 78
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 35
- 229920005591 polysilicon Polymers 0.000 description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 description 31
- 230000003287 optical effect Effects 0.000 description 24
- 238000002834 transmittance Methods 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 238000004626 scanning electron microscopy Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 238000005499 laser crystallization Methods 0.000 description 15
- 238000002474 experimental method Methods 0.000 description 12
- 239000010453 quartz Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 238000004627 transmission electron microscopy Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000000265 homogenisation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007715 excimer laser crystallization Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- Lasers (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000243194A JP5255739B2 (ja) | 1999-08-18 | 2000-08-10 | 半導体装置の作製方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1999231211 | 1999-08-18 | ||
| JP23121199 | 1999-08-18 | ||
| JP11-244204 | 1999-08-31 | ||
| JP24420499 | 1999-08-31 | ||
| JP1999244204 | 1999-08-31 | ||
| JP11-231211 | 1999-08-31 | ||
| JP2000243194A JP5255739B2 (ja) | 1999-08-18 | 2000-08-10 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001144015A JP2001144015A (ja) | 2001-05-25 |
| JP2001144015A5 JP2001144015A5 (enrdf_load_stackoverflow) | 2007-09-06 |
| JP5255739B2 true JP5255739B2 (ja) | 2013-08-07 |
Family
ID=27331739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000243194A Expired - Fee Related JP5255739B2 (ja) | 1999-08-18 | 2000-08-10 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5255739B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104718604B (zh) * | 2012-10-23 | 2017-06-30 | 富士电机株式会社 | 半导体装置的制造方法 |
| KR102516486B1 (ko) * | 2017-12-05 | 2023-04-03 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5815226A (ja) * | 1981-07-20 | 1983-01-28 | Nec Corp | レ−ザアニ−リング法 |
| JPH01155315A (ja) * | 1987-12-14 | 1989-06-19 | Nec Corp | レーザ分割ミラー装置及びこれを使用したレーザ分割装置 |
| JPH04364031A (ja) * | 1991-06-10 | 1992-12-16 | Ii & S:Kk | レーザアニール方法およびレーザアニール装置 |
| JPH0836144A (ja) * | 1994-07-22 | 1996-02-06 | Miyachi Technos Corp | レーザ分岐装置 |
| JPH09246555A (ja) * | 1996-03-04 | 1997-09-19 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
| JPH09260676A (ja) * | 1996-03-26 | 1997-10-03 | Sharp Corp | 薄膜トランジスタの製造方法 |
| JPH09266318A (ja) * | 1996-03-29 | 1997-10-07 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
| JP3204986B2 (ja) * | 1996-05-28 | 2001-09-04 | ザ トラスティース オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上の半導体膜領域の結晶化処理及びこの方法により製造されたデバイス |
-
2000
- 2000-08-10 JP JP2000243194A patent/JP5255739B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001144015A (ja) | 2001-05-25 |
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