JP5248179B2 - 電子装置の製造方法 - Google Patents
電子装置の製造方法 Download PDFInfo
- Publication number
- JP5248179B2 JP5248179B2 JP2008107582A JP2008107582A JP5248179B2 JP 5248179 B2 JP5248179 B2 JP 5248179B2 JP 2008107582 A JP2008107582 A JP 2008107582A JP 2008107582 A JP2008107582 A JP 2008107582A JP 5248179 B2 JP5248179 B2 JP 5248179B2
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- JP
- Japan
- Prior art keywords
- substrate
- metal
- alloy
- electronic device
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 232
- 239000002184 metal Substances 0.000 claims abstract description 198
- 229910052751 metal Inorganic materials 0.000 claims abstract description 198
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 69
- 239000000956 alloy Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 57
- 238000002844 melting Methods 0.000 claims abstract description 44
- 230000008018 melting Effects 0.000 claims abstract description 43
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 229910000846 In alloy Inorganic materials 0.000 claims description 25
- 229910017980 Ag—Sn Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910017755 Cu-Sn Inorganic materials 0.000 claims description 11
- 229910017927 Cu—Sn Inorganic materials 0.000 claims description 11
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 11
- 239000000155 melt Substances 0.000 claims description 7
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 122
- 239000000463 material Substances 0.000 description 43
- 229910000679 solder Inorganic materials 0.000 description 41
- 229910015363 Au—Sn Inorganic materials 0.000 description 34
- 229910052710 silicon Inorganic materials 0.000 description 27
- 239000010703 silicon Substances 0.000 description 27
- 239000011521 glass Substances 0.000 description 17
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 238000007747 plating Methods 0.000 description 12
- 230000001133 acceleration Effects 0.000 description 9
- 229910017482 Cu 6 Sn 5 Inorganic materials 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 8
- 229920000647 polyepoxide Polymers 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008107582A JP5248179B2 (ja) | 2008-04-17 | 2008-04-17 | 電子装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008107582A JP5248179B2 (ja) | 2008-04-17 | 2008-04-17 | 電子装置の製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009260049A JP2009260049A (ja) | 2009-11-05 |
JP2009260049A5 JP2009260049A5 (enrdf_load_stackoverflow) | 2011-02-24 |
JP5248179B2 true JP5248179B2 (ja) | 2013-07-31 |
Family
ID=41387100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008107582A Active JP5248179B2 (ja) | 2008-04-17 | 2008-04-17 | 電子装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5248179B2 (enrdf_load_stackoverflow) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130155629A1 (en) * | 2011-12-19 | 2013-06-20 | Tong Hsing Electronic Industries, Ltd. | Hermetic Semiconductor Package Structure and Method for Manufacturing the same |
JP6041731B2 (ja) | 2013-03-27 | 2016-12-14 | 新光電気工業株式会社 | インターポーザ、及び電子部品パッケージ |
WO2015046209A1 (ja) * | 2013-09-27 | 2015-04-02 | 京セラ株式会社 | 蓋体、パッケージおよび電子装置 |
US10453786B2 (en) | 2016-01-19 | 2019-10-22 | General Electric Company | Power electronics package and method of manufacturing thereof |
KR102367619B1 (ko) * | 2017-02-09 | 2022-02-28 | 제네럴 일렉트릭 컴퍼니 | 전력 전자 패키지 및 그 제조 방법 |
JP2022102015A (ja) * | 2020-12-25 | 2022-07-07 | 株式会社大真空 | パッケージ、リッド及びパッケージの製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH105990A (ja) * | 1996-06-17 | 1998-01-13 | Matsushita Electric Ind Co Ltd | 電子部品の製造方法 |
US5945735A (en) * | 1997-01-31 | 1999-08-31 | International Business Machines Corporation | Hermetic sealing of a substrate of high thermal conductivity using an interposer of low thermal conductivity |
JP2001044239A (ja) * | 1999-07-29 | 2001-02-16 | Matsushita Electric Ind Co Ltd | 電子部品の混載実装方法及びその混載実装工程に用いる部材 |
JP3905041B2 (ja) * | 2003-01-07 | 2007-04-18 | 株式会社日立製作所 | 電子デバイスおよびその製造方法 |
JP4513513B2 (ja) * | 2004-11-09 | 2010-07-28 | 株式会社村田製作所 | 電子部品の製造方法 |
US7745897B2 (en) * | 2005-05-27 | 2010-06-29 | Aptina Imaging Corporation | Methods for packaging an image sensor and a packaged image sensor |
US7569926B2 (en) * | 2005-08-26 | 2009-08-04 | Innovative Micro Technology | Wafer level hermetic bond using metal alloy with raised feature |
-
2008
- 2008-04-17 JP JP2008107582A patent/JP5248179B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2009260049A (ja) | 2009-11-05 |
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