JP5244274B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5244274B2
JP5244274B2 JP2001127014A JP2001127014A JP5244274B2 JP 5244274 B2 JP5244274 B2 JP 5244274B2 JP 2001127014 A JP2001127014 A JP 2001127014A JP 2001127014 A JP2001127014 A JP 2001127014A JP 5244274 B2 JP5244274 B2 JP 5244274B2
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Japan
Prior art keywords
film
region
silicon film
laser
crystalline
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Expired - Lifetime
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JP2001127014A
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Japanese (ja)
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JP2002016015A (ja
JP2002016015A5 (enExample
Inventor
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001127014A priority Critical patent/JP5244274B2/ja
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Publication of JP2002016015A5 publication Critical patent/JP2002016015A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001127014A 2000-04-28 2001-04-25 半導体装置の作製方法 Expired - Lifetime JP5244274B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001127014A JP5244274B2 (ja) 2000-04-28 2001-04-25 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000130782 2000-04-28
JP2000130782 2000-04-28
JP2000-130782 2000-04-28
JP2001127014A JP5244274B2 (ja) 2000-04-28 2001-04-25 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002016015A JP2002016015A (ja) 2002-01-18
JP2002016015A5 JP2002016015A5 (enExample) 2008-05-08
JP5244274B2 true JP5244274B2 (ja) 2013-07-24

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JP2001127014A Expired - Lifetime JP5244274B2 (ja) 2000-04-28 2001-04-25 半導体装置の作製方法

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JP (1) JP5244274B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005045209A (ja) * 2003-07-09 2005-02-17 Mitsubishi Electric Corp レーザアニール方法
JP4935059B2 (ja) * 2005-02-17 2012-05-23 三菱電機株式会社 半導体装置の製造方法
JP5094138B2 (ja) * 2007-01-23 2012-12-12 株式会社半導体エネルギー研究所 結晶性半導体膜の作製方法
JP2008211093A (ja) * 2007-02-27 2008-09-11 Sumitomo Heavy Ind Ltd レーザアニール装置及びレーザアニール方法
JP4993292B2 (ja) * 2007-07-18 2012-08-08 カシオ計算機株式会社 表示パネル及びその製造方法
JP5236929B2 (ja) * 2007-10-31 2013-07-17 富士フイルム株式会社 レーザアニール方法
CN103984176B (zh) * 2009-10-09 2016-01-20 株式会社半导体能源研究所 液晶显示装置及包括该液晶显示装置的电子设备
KR20110114089A (ko) * 2010-04-12 2011-10-19 삼성모바일디스플레이주식회사 박막 트랜지스터, 이의 제조 방법 및 이를 포함하는 표시 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59202622A (ja) * 1983-05-04 1984-11-16 Hitachi Ltd 単結晶薄膜の製造方法
JPS6354715A (ja) * 1986-08-25 1988-03-09 Seiko Instr & Electronics Ltd 半導体薄膜のビ−ムアニ−ル方法
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
JP3210313B2 (ja) * 1989-08-11 2001-09-17 ソニー株式会社 多結晶シリコン薄膜の特性改善方法
JPH10244392A (ja) * 1997-03-04 1998-09-14 Semiconductor Energy Lab Co Ltd レーザー照射装置
JP2000260731A (ja) * 1999-03-10 2000-09-22 Mitsubishi Electric Corp レーザ熱処理方法、レーザ熱処理装置および半導体デバイス
JP2000269133A (ja) * 1999-03-16 2000-09-29 Seiko Epson Corp 薄膜半導体装置の製造方法
US6884699B1 (en) * 2000-10-06 2005-04-26 Mitsubishi Denki Kabushiki Kaisha Process and unit for production of polycrystalline silicon film

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JP2002016015A (ja) 2002-01-18

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