JP2002016015A5 - - Google Patents
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- JP2002016015A5 JP2002016015A5 JP2001127014A JP2001127014A JP2002016015A5 JP 2002016015 A5 JP2002016015 A5 JP 2002016015A5 JP 2001127014 A JP2001127014 A JP 2001127014A JP 2001127014 A JP2001127014 A JP 2001127014A JP 2002016015 A5 JP2002016015 A5 JP 2002016015A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001127014A JP5244274B2 (ja) | 2000-04-28 | 2001-04-25 | 半導体装置の作製方法 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000130782 | 2000-04-28 | ||
| JP2000130782 | 2000-04-28 | ||
| JP2000-130782 | 2000-04-28 | ||
| JP2001127014A JP5244274B2 (ja) | 2000-04-28 | 2001-04-25 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002016015A JP2002016015A (ja) | 2002-01-18 |
| JP2002016015A5 true JP2002016015A5 (enExample) | 2008-05-08 |
| JP5244274B2 JP5244274B2 (ja) | 2013-07-24 |
Family
ID=26591228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001127014A Expired - Lifetime JP5244274B2 (ja) | 2000-04-28 | 2001-04-25 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5244274B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005045209A (ja) * | 2003-07-09 | 2005-02-17 | Mitsubishi Electric Corp | レーザアニール方法 |
| JP4935059B2 (ja) * | 2005-02-17 | 2012-05-23 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP5094138B2 (ja) * | 2007-01-23 | 2012-12-12 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
| JP2008211093A (ja) * | 2007-02-27 | 2008-09-11 | Sumitomo Heavy Ind Ltd | レーザアニール装置及びレーザアニール方法 |
| JP4993292B2 (ja) * | 2007-07-18 | 2012-08-08 | カシオ計算機株式会社 | 表示パネル及びその製造方法 |
| JP5236929B2 (ja) * | 2007-10-31 | 2013-07-17 | 富士フイルム株式会社 | レーザアニール方法 |
| CN103984176B (zh) * | 2009-10-09 | 2016-01-20 | 株式会社半导体能源研究所 | 液晶显示装置及包括该液晶显示装置的电子设备 |
| KR20110114089A (ko) * | 2010-04-12 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 포함하는 표시 장치 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59202622A (ja) * | 1983-05-04 | 1984-11-16 | Hitachi Ltd | 単結晶薄膜の製造方法 |
| JPS6354715A (ja) * | 1986-08-25 | 1988-03-09 | Seiko Instr & Electronics Ltd | 半導体薄膜のビ−ムアニ−ル方法 |
| US4915772A (en) * | 1986-10-01 | 1990-04-10 | Corning Incorporated | Capping layer for recrystallization process |
| JP3210313B2 (ja) * | 1989-08-11 | 2001-09-17 | ソニー株式会社 | 多結晶シリコン薄膜の特性改善方法 |
| JPH10244392A (ja) * | 1997-03-04 | 1998-09-14 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
| JP2000260731A (ja) * | 1999-03-10 | 2000-09-22 | Mitsubishi Electric Corp | レーザ熱処理方法、レーザ熱処理装置および半導体デバイス |
| JP2000269133A (ja) * | 1999-03-16 | 2000-09-29 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
| US6884699B1 (en) * | 2000-10-06 | 2005-04-26 | Mitsubishi Denki Kabushiki Kaisha | Process and unit for production of polycrystalline silicon film |
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2001
- 2001-04-25 JP JP2001127014A patent/JP5244274B2/ja not_active Expired - Lifetime