JP5221674B2 - 裏面コンタクト太陽電池用の高光吸収層を有する反射防止膜 - Google Patents

裏面コンタクト太陽電池用の高光吸収層を有する反射防止膜 Download PDF

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JP5221674B2
JP5221674B2 JP2010538044A JP2010538044A JP5221674B2 JP 5221674 B2 JP5221674 B2 JP 5221674B2 JP 2010538044 A JP2010538044 A JP 2010538044A JP 2010538044 A JP2010538044 A JP 2010538044A JP 5221674 B2 JP5221674 B2 JP 5221674B2
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solar cell
back contact
light absorption
silicon nitride
absorption layer
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JP2011518422A5 (enExample
JP2011518422A (ja
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ルーアン、シン−チャオ
ケスター、デニス デ
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サンパワー コーポレイション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Energy (AREA)
JP2010538044A 2007-12-14 2008-12-02 裏面コンタクト太陽電池用の高光吸収層を有する反射防止膜 Active JP5221674B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US775807P 2007-12-14 2007-12-14
US61/007,758 2007-12-14
US12/325,878 2008-12-01
US12/325,878 US8198528B2 (en) 2007-12-14 2008-12-01 Anti-reflective coating with high optical absorption layer for backside contact solar cells
PCT/US2008/085241 WO2009079199A1 (en) 2007-12-14 2008-12-02 Anti-reflective coating with high optical absorption layer for backside contact solar cells

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JP2013045365A Division JP5478750B2 (ja) 2007-12-14 2013-03-07 裏面コンタクト太陽電池用の高光吸収層を有する反射防止膜

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JP2011518422A JP2011518422A (ja) 2011-06-23
JP2011518422A5 JP2011518422A5 (enExample) 2012-01-19
JP5221674B2 true JP5221674B2 (ja) 2013-06-26

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JP2013045365A Active JP5478750B2 (ja) 2007-12-14 2013-03-07 裏面コンタクト太陽電池用の高光吸収層を有する反射防止膜

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US (3) US8198528B2 (enExample)
EP (1) EP2220688A1 (enExample)
JP (2) JP5221674B2 (enExample)
KR (1) KR101513758B1 (enExample)
CN (2) CN101897032B (enExample)
WO (1) WO2009079199A1 (enExample)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US20080202577A1 (en) 2007-02-16 2008-08-28 Henry Hieslmair Dynamic design of solar cell structures, photovoltaic modules and corresponding processes
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells
KR20110086098A (ko) 2008-10-23 2011-07-27 알타 디바이씨즈, 인크. 광전지 장치
WO2010057060A2 (en) 2008-11-13 2010-05-20 Solexel, Inc. Methods and systems for manufacturing thin-film solar cells
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
KR101142861B1 (ko) 2009-02-04 2012-05-08 엘지전자 주식회사 태양 전지 및 그 제조 방법
WO2010091466A1 (en) * 2009-02-11 2010-08-19 Newsouth Innovations Pty Limited Photovoltaic device structure and method
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
JP4951088B2 (ja) * 2009-05-21 2012-06-13 韓國電子通信研究院 輻射熱を熱源として利用する熱電素子及びその製造方法
US8525018B2 (en) 2009-09-07 2013-09-03 Lg Electronics Inc. Solar cell
US9064999B2 (en) 2009-09-07 2015-06-23 Lg Electronics Inc. Solar cell and method for manufacturing the same
US9691921B2 (en) 2009-10-14 2017-06-27 Alta Devices, Inc. Textured metallic back reflector
US9502594B2 (en) 2012-01-19 2016-11-22 Alta Devices, Inc. Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching
US9136422B1 (en) * 2012-01-19 2015-09-15 Alta Devices, Inc. Texturing a layer in an optoelectronic device for improved angle randomization of light
US20150380576A1 (en) 2010-10-13 2015-12-31 Alta Devices, Inc. Optoelectronic device with dielectric layer and method of manufacture
US11271128B2 (en) 2009-10-23 2022-03-08 Utica Leaseco, Llc Multi-junction optoelectronic device
US9768329B1 (en) 2009-10-23 2017-09-19 Alta Devices, Inc. Multi-junction optoelectronic device
US20170141256A1 (en) 2009-10-23 2017-05-18 Alta Devices, Inc. Multi-junction optoelectronic device with group iv semiconductor as a bottom junction
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
CN102148588A (zh) * 2010-02-05 2011-08-10 胜华科技股份有限公司 太阳能模块
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
US20110272024A1 (en) * 2010-04-13 2011-11-10 Applied Materials, Inc. MULTI-LAYER SiN FOR FUNCTIONAL AND OPTICAL GRADED ARC LAYERS ON CRYSTALLINE SOLAR CELLS
KR101381305B1 (ko) * 2010-04-23 2014-04-07 솔렉셀, 인크. 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치
US8211731B2 (en) 2010-06-07 2012-07-03 Sunpower Corporation Ablation of film stacks in solar cell fabrication processes
US8263899B2 (en) 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
KR101275575B1 (ko) * 2010-10-11 2013-06-14 엘지전자 주식회사 후면전극형 태양전지 및 이의 제조 방법
CN102610661A (zh) * 2011-01-25 2012-07-25 东方电气集团(宜兴)迈吉太阳能科技有限公司 单晶硅太阳能电池前表面用叠层复合钝化膜
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
US8586403B2 (en) 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US9748414B2 (en) 2011-05-20 2017-08-29 Arthur R. Zingher Self-activated front surface bias for a solar cell
US8692111B2 (en) 2011-08-23 2014-04-08 Sunpower Corporation High throughput laser ablation processes and structures for forming contact holes in solar cells
DE102011111511A1 (de) * 2011-08-31 2013-02-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Erzeugen einer Honeycomb-Textur an einer Oberfläche eines Substrates
DE102011084644A1 (de) * 2011-10-17 2013-04-18 Osram Gmbh Verfahren zur herstellung eines photovoltaischen elements mit einer siliziumdioxidschicht
US8822262B2 (en) 2011-12-22 2014-09-02 Sunpower Corporation Fabricating solar cells with silicon nanoparticles
WO2013130179A2 (en) * 2012-01-03 2013-09-06 Applied Materials, Inc. Buffer layer for improving the performance and stability of surface passivation of si solar cells
US11038080B2 (en) 2012-01-19 2021-06-15 Utica Leaseco, Llc Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching
US8513045B1 (en) 2012-01-31 2013-08-20 Sunpower Corporation Laser system with multiple laser pulses for fabrication of solar cells
WO2014000826A1 (en) * 2012-06-29 2014-01-03 Ecole Polytechnique Federale De Lausanne (Epfl) Solar cell
WO2014071417A2 (en) * 2012-11-05 2014-05-08 Solexel, Inc. Systems and methods for monolithically isled solar photovoltaic cells and modules
CN103151400B (zh) * 2013-02-18 2017-02-08 陈琦 一种带诱电体天线的电磁波能电池
KR102045001B1 (ko) * 2013-06-05 2019-12-02 엘지전자 주식회사 태양 전지 및 이의 제조 방법
US20160268462A1 (en) * 2013-10-25 2016-09-15 Sharp Kabushiki Kaisha Photoelectric conversion element
US20150280043A1 (en) * 2014-03-27 2015-10-01 David D. Smith Solar cell with trench-free emitter regions
US20150349180A1 (en) * 2014-05-30 2015-12-03 David D. Smith Relative dopant concentration levels in solar cells
CN104064609A (zh) * 2014-05-30 2014-09-24 晶澳（扬州）太阳能科技有限公司 一种背接触太阳能电池组件及其制备方法
CN104241403A (zh) * 2014-09-01 2014-12-24 奥特斯维能源（太仓）有限公司 一种晶硅电池多层钝化减反膜及其制作方法
JP6700654B2 (ja) * 2014-10-21 2020-05-27 シャープ株式会社 ヘテロバックコンタクト型太陽電池とその製造方法
CN104900722A (zh) * 2014-12-09 2015-09-09 杭州大和热磁电子有限公司 一种具有三层减反射膜的晶体硅太阳能电池及其制备方法
US9997652B2 (en) * 2015-03-23 2018-06-12 Sunpower Corporation Deposition approaches for emitter layers of solar cells
KR101795142B1 (ko) * 2015-07-31 2017-11-07 현대자동차주식회사 눈부심 방지 다층코팅을 구비한 투명기판
US11522091B2 (en) * 2016-01-27 2022-12-06 Shangrao Jinko Solar Technology Development Co., Ltd Solar cell
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US20180138328A1 (en) * 2016-11-11 2018-05-17 Sunpower Corporation Uv-curing of light-receiving surfaces of solar cells
CN107068774A (zh) * 2017-03-30 2017-08-18 中国科学院半导体研究所 太阳能电池减反钝化膜及其制备方法及太阳能电池片
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
CN109192809B (zh) * 2018-07-20 2019-10-11 常州大学 一种全背电极电池及其高效陷光和选择性掺杂制造方法
CN109326673B (zh) * 2018-08-10 2024-09-20 正泰新能科技股份有限公司 P型晶体硅perc电池及其制备方法
WO2020111422A1 (ko) * 2018-11-29 2020-06-04 울산과학기술원 무색 투명 반도체 기판 및 이의 제조방법
KR102253547B1 (ko) 2018-11-29 2021-05-18 울산과학기술원 무색 투명 반도체 기판 및 이의 제조방법
CN109755350A (zh) * 2019-01-14 2019-05-14 浙江晶科能源有限公司 一种太阳能电池及其制作方法
KR102735357B1 (ko) 2019-04-25 2024-11-28 진가오 솔라 컴퍼니 리미티드 태양 전지 및 그 제조 방법
EP3859795A1 (de) * 2020-01-28 2021-08-04 (CNBM) Bengbu Design & Research Institute for Glass Industry Co., Ltd. Farbiges plattenförmiges bauteil mit strukturierter deckplatte und farbfilterschicht
KR102660816B1 (ko) * 2021-10-29 2024-04-24 고려대학교 산학협력단 광파장 흡수 제어가 가능한 에멀젼 스펙트럼 유체 필터 및 그 제조 방법
CN114038921B (zh) * 2021-11-05 2024-03-29 晶科能源(海宁)有限公司 太阳能电池及光伏组件

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3743847A (en) * 1971-06-01 1973-07-03 Motorola Inc Amorphous silicon film as a uv filter
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4927770A (en) * 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
JP2808004B2 (ja) * 1989-01-30 1998-10-08 京セラ株式会社 太陽電池
US5053083A (en) * 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5057439A (en) * 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
US5030295A (en) * 1990-02-12 1991-07-09 Electric Power Research Institut Radiation resistant passivation of silicon solar cells
US5377045A (en) * 1990-05-10 1994-12-27 The Boc Group, Inc. Durable low-emissivity solar control thin film coating
US5164019A (en) * 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5360990A (en) * 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
US5369291A (en) * 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
JPH09512665A (ja) 1994-03-25 1997-12-16 アモコ／エンロン・ソーラー 高水素希釈低温プラズマ沈着によって製造される非晶質珪素ベースの器具の向上せしめられた安定化特性
US5641362A (en) * 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US6093757A (en) * 1995-12-19 2000-07-25 Midwest Research Institute Composition and method for encapsulating photovoltaic devices
US6274402B1 (en) * 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6423568B1 (en) * 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) * 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6387726B1 (en) * 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6313395B1 (en) * 2000-04-24 2001-11-06 Sunpower Corporation Interconnect structure for solar cells and method of making same
US6333457B1 (en) * 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
DE10060221A1 (de) * 2000-12-04 2002-06-13 Cfi Ceramics For Industry Gmbh Substrat auf Basis von Siliciumnitrid für Halbleiter-Bauelemente
JP4362273B2 (ja) 2001-12-03 2009-11-11 日本板硝子株式会社 基板の製造方法
CN1210761C (zh) * 2002-03-28 2005-07-13 联华电子股份有限公司 形成混合性抗反射层的方法
JP4118187B2 (ja) * 2003-05-09 2008-07-16 信越半導体株式会社 太陽電池の製造方法
JP4186725B2 (ja) * 2003-06-24 2008-11-26 トヨタ自動車株式会社 光電変換素子
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
JP2006216841A (ja) * 2005-02-04 2006-08-17 Toyota Motor Corp 光電変換素子
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
US7468485B1 (en) * 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
NO20061668L (no) * 2006-04-12 2007-10-15 Renewable Energy Corp Solcelle og fremgangsmate for fremstilling av samme
US8198528B2 (en) * 2007-12-14 2012-06-12 Sunpower Corporation Anti-reflective coating with high optical absorption layer for backside contact solar cells

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US8198528B2 (en) 2012-06-12
CN105679843A (zh) 2016-06-15
CN101897032A (zh) 2010-11-24
US20120255606A1 (en) 2012-10-11
CN101897032B (zh) 2016-02-10
EP2220688A1 (en) 2010-08-25
JP2011518422A (ja) 2011-06-23
US20140373910A1 (en) 2014-12-25
US9577120B2 (en) 2017-02-21
JP2013138250A (ja) 2013-07-11
JP5478750B2 (ja) 2014-04-23
CN105679843B (zh) 2018-05-22
US8748736B2 (en) 2014-06-10
WO2009079199A1 (en) 2009-06-25
KR20100097150A (ko) 2010-09-02
US20090151784A1 (en) 2009-06-18

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