JP5218285B2 - 熱電変換材料 - Google Patents
熱電変換材料 Download PDFInfo
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- JP5218285B2 JP5218285B2 JP2009134835A JP2009134835A JP5218285B2 JP 5218285 B2 JP5218285 B2 JP 5218285B2 JP 2009134835 A JP2009134835 A JP 2009134835A JP 2009134835 A JP2009134835 A JP 2009134835A JP 5218285 B2 JP5218285 B2 JP 5218285B2
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Description
Z=α2×σ/κ
<1>Zn、Al、GaおよびBを含有する複合酸化物からなることを特徴とする熱電変換材料。
<2>Zn、Al、GaおよびBの総モル量を1としたときの、Bのモル量が0.0001以上0.01以下である前記<1>記載の熱電変換材料。
<3>Zn、Al、GaおよびBの総モル量を1としたときの、Alのモル量が0.001以上0.1以下である前記<1>または<2>記載の熱電変換材料。
<4>Zn、Al、GaおよびBの総モル量を1としたときの、Gaのモル量が0.001以上0.1以下である前記<1>〜<3>のいずれかに記載の熱電変換材料。
<5>相対密度が95%以上である前記<1>〜<4>のいずれかに記載の熱電変換材料。
<6>表面の少なくとも一部が、皮膜でコーティングされている前記<1>〜<5>のいずれかに記載の熱電変換材料。
<7>複数のn型熱電変換材料および複数のp型熱電変換材料と、前記複数のp型熱電変換材料及び複数のn型熱電変換材料をp型n型交互に電気的に直列に接続させる複数の電極とを備える熱電変換モジュールであって、前記n型熱電変換材料が、前記<1>〜<6>のいずれかに記載の熱電変換材料であることを特徴とする熱電変換モジュール。
本発明における熱電変換材料は、原料化合物の混合物を焼結することにより製造することができる。具体的には、本発明における複合酸化物に対応するZn、Al、Ga、Bを含有する化合物を所定の組成となるように秤量、混合して得られる混合物を焼結することにより製造することができる。
相対密度(%)=γ/β×100
また、本発明の熱電変換材料の表面の少なくとも一部は、皮膜でコーティングされていてもよい。皮膜でコーティングされることにより、高温雰囲気下において、熱電変換材料におけるZnの蒸発を抑制することができ、また、例えば、雰囲気ガスが大気等の酸化性ガスである場合のように、熱電変換材料が酸化しやすい雰囲気下であっても、熱電変換材料の特性低下を抑制することができる。皮膜は、シリカ、アルミナ、又は炭化珪素のうち少なくとも1つを主材料とすることが好ましい。
次に、熱電変換モジュールについて説明する。本発明の熱電変換モジュールは、複数のn型熱電変換材料および複数のp型熱電変換材料と、前記複数のp型熱電変換材料及び複数のn型熱電変換材料をp型n型交互に電気的に直列に接続させる複数の電極とを備え、前記n型熱電変換材料として、上記の本発明の熱電変換材料を用いる。
ZnO粉末(株式会社高純度化学研究所製)とAl2O3粉末(株式会社高純度化学研究所製)とGa2O3粉末(株式会社高純度化学研究所製)とB2O3粉末(株式会社高純度化学研究所製)を用いて、Zn:Al:Ga:Bが、モル比で、0.959:0.02:0.02:0.001となるように秤量し、エタノールおよびZrO2ボールとともに樹脂ポットに入れ、ボールミルにて20時間混合して、乾燥して、混合物を得た。この混合物について、金型を用いて、一軸プレスで直方体状に成形し、さらにプレス機(コベルコ製CIP)を用いて、静水圧プレスを1800kgf/cm2の圧力で1分間行って得られた成形体を、窒素雰囲気において1200℃で10時間保持して焼結を行った。
ZnO粉末(株式会社高純度化学研究所製)とAl2O3粉末(株式会社高純度化学研究所製)とGa2O3粉末(株式会社高純度化学研究所製)を用いて、Zn:Al:Gaが、モル比で、0.96:0.02:0.02となるように秤量し、エタノールおよびZrO2ボールとともに樹脂ポットに入れ、ボールミルにて20時間混合して、乾燥して、混合物を得た。この混合物について、金型を用いて、一軸プレスで直方体状に成形し、さらにプレス機(コベルコ製CIP)を用いて、静水圧プレスを1800kgf/cm2の圧力で1分間行って得られた成形体を、窒素雰囲気において1200℃で10時間保持して焼結を行った。
Zn:Al:Ga:Bが、モル比で、0.9599:0.02:0.02:0.0001となるように秤量した以外は、実施例1と同様にして、複合酸化物からなる焼結体を得た。
Zn:Al:Ga:Bが、モル比で、0.95:0.02:0.02:0.01となるように秤量した以外は、実施例1と同様にして、複合酸化物からなる焼結体を得た。
Claims (7)
- Zn、Al、GaおよびBを含有する複合酸化物からなることを特徴とする熱電変換材料。
- Zn、Al、GaおよびBの総モル量を1としたときの、Bのモル量が0.0001以上0.01以下である請求項1記載の熱電変換材料。
- Zn、Al、GaおよびBの総モル量を1としたときの、Alのモル量が0.001以上0.1以下である請求項1または2記載の熱電変換材料。
- Zn、Al、GaおよびBの総モル量を1としたときの、Gaのモル量が0.001以上0.1以下である請求項1〜3のいずれかに記載の熱電変換材料。
- 相対密度が95%以上である請求項1〜4のいずれかに記載の熱電変換材料。
- 表面の少なくとも一部が、皮膜でコーティングされている請求項1〜5のいずれかに記載の熱電変換材料。
- 複数のn型熱電変換材料および複数のp型熱電変換材料と、前記複数のp型熱電変換材料及び複数のn型熱電変換材料をp型n型交互に電気的に直列に接続させる複数の電極とを備える熱電変換モジュールであって、前記n型熱電変換材料が、請求項1〜6のいずれかに記載の熱電変換材料であることを特徴とする熱電変換モジュール。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009134835A JP5218285B2 (ja) | 2009-06-04 | 2009-06-04 | 熱電変換材料 |
CN2010800244379A CN102460753A (zh) | 2009-06-04 | 2010-05-28 | 热电转换材料 |
PCT/JP2010/059482 WO2010140669A1 (ja) | 2009-06-04 | 2010-05-28 | 熱電変換材料 |
US13/322,940 US20120118347A1 (en) | 2009-06-04 | 2010-05-28 | Thermoelectric conversion material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009134835A JP5218285B2 (ja) | 2009-06-04 | 2009-06-04 | 熱電変換材料 |
Publications (2)
Publication Number | Publication Date |
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JP2010283112A JP2010283112A (ja) | 2010-12-16 |
JP5218285B2 true JP5218285B2 (ja) | 2013-06-26 |
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JP2009134835A Expired - Fee Related JP5218285B2 (ja) | 2009-06-04 | 2009-06-04 | 熱電変換材料 |
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Country | Link |
---|---|
US (1) | US20120118347A1 (ja) |
JP (1) | JP5218285B2 (ja) |
CN (1) | CN102460753A (ja) |
WO (1) | WO2010140669A1 (ja) |
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KR101713281B1 (ko) * | 2010-12-17 | 2017-03-07 | 삼성전자주식회사 | 코팅층 함유 열전재료, 그의 제조방법과 이를 포함하는 열전장치 |
RU189447U1 (ru) * | 2019-02-13 | 2019-05-22 | Федеральное государственное бюджетное учреждение науки Институт химии твердого тела Уральского отделения Российской академии наук | Термоэлектрический модуль |
CN112038478B (zh) * | 2020-09-15 | 2023-09-26 | 上海商皓电子科技有限公司 | 一种半导体制冷元件的制造工艺及元件 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US4589918A (en) * | 1984-03-28 | 1986-05-20 | National Research Institute For Metals | Thermal shock resistant thermoelectric material |
WO2002016973A2 (en) * | 2000-08-25 | 2002-02-28 | Microcoating Technologies, Inc. | Electronic and optical devices and methods of forming these devices |
JP2002094131A (ja) * | 2000-09-13 | 2002-03-29 | Sumitomo Special Metals Co Ltd | 熱電変換素子 |
DE10392993B4 (de) * | 2002-07-29 | 2011-03-24 | National Institute Of Advanced Industrial Science And Technology | Thermoelektrisches Material enthaltend Stickstoff |
JP2004134454A (ja) * | 2002-10-08 | 2004-04-30 | Toyota Central Res & Dev Lab Inc | 熱電変換材料及びその製造方法 |
JP2005072391A (ja) * | 2003-08-26 | 2005-03-17 | Kyocera Corp | N型熱電材料及びその製造方法並びにn型熱電素子 |
JP2005200249A (ja) * | 2004-01-14 | 2005-07-28 | Toyota Central Res & Dev Lab Inc | 焼結体の製造方法 |
JP4266228B2 (ja) * | 2006-03-24 | 2009-05-20 | 株式会社東芝 | 熱電変換モジュールおよびその製造方法 |
JP4745183B2 (ja) * | 2006-09-29 | 2011-08-10 | 株式会社東芝 | 熱電変換材料とそれを用いた熱電変換モジュール |
JP5388266B2 (ja) * | 2008-03-19 | 2014-01-15 | 国立大学法人岩手大学 | ZnO系ターゲット及びその製造方法並び導電性薄膜の製造方法及び導電性薄膜 |
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2009
- 2009-06-04 JP JP2009134835A patent/JP5218285B2/ja not_active Expired - Fee Related
-
2010
- 2010-05-28 US US13/322,940 patent/US20120118347A1/en not_active Abandoned
- 2010-05-28 CN CN2010800244379A patent/CN102460753A/zh active Pending
- 2010-05-28 WO PCT/JP2010/059482 patent/WO2010140669A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US20120118347A1 (en) | 2012-05-17 |
CN102460753A (zh) | 2012-05-16 |
JP2010283112A (ja) | 2010-12-16 |
WO2010140669A1 (ja) | 2010-12-09 |
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