JP5215183B2 - 金属錯体 - Google Patents
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- JP5215183B2 JP5215183B2 JP2008526396A JP2008526396A JP5215183B2 JP 5215183 B2 JP5215183 B2 JP 5215183B2 JP 2008526396 A JP2008526396 A JP 2008526396A JP 2008526396 A JP2008526396 A JP 2008526396A JP 5215183 B2 JP5215183 B2 JP 5215183B2
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- 0 CCC(CC)(*C1=C2****1)*(*)=C1C2=C(*=C)NC1(*)* Chemical compound CCC(CC)(*C1=C2****1)*(*)=C1C2=C(*=C)NC1(*)* 0.000 description 3
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Description
1.重大な欠陥は上記した化合物の低い熱的安定性である。例えば、ホモレプチック錯体であるfac−トリス(1−フェニルイソキノリン−C2,N)イリジウム(III)(Ir(piq)3)を分解することなく昇華させることができない。典型的な高い真空条件下(p<10-7mbar)でさえ、この化合物のかなりの分解が観察され、ここで、用いたIr(piq)3の量の約30重量%を占めるイリジウム含有灰に加えて、1−フェニルイソキノリンおよび他の低分子量化合物の遊離を検出することができる。この熱的分解は、再現することが実質的に不可能であるデバイス特性をもたらし、特に寿命に悪影響を与える。昇華による金属錯体の精製中に高い温度安定性が得られる錯体を有することも必要である。というのは、分解は錯体の大きな損失をもたらすからである。
2.動作寿命は一般的に余りにも低く、これまでは高品質で長寿命のデバイスへのリン光OLEDの導入を妨げてきた。
3.錯体はしばしば、有機溶媒への低い溶解度を有するにすぎず、これは再結晶またはクロマトグラフによる効率的な精製を非常に困難なものとするか、またはそれを妨げていた。このことは、特に、ディスプレイ製造において必要とされる比較的大量のものの精製にあてはまる。例えばポリマーの調製に用いられ得る臭素化錯体は特に低い溶解性を示すにすぎず、従って重合中に処理することが困難である。
4.従来技術に従う系のための配位子、特に赤色発光錯体のための配位子は複雑な、多工程のプロセスで得ることができるにすぎない。
(式中、以下が用いられる記号および添え字に適用される。すなわち、
Mは遷移金属であり、
Aは各々の出現について同一であるか異なり、NRまたはOであり、
Dは、A=NRの場合にはsp2混成炭素原子であり、これはMに結合し、またA=Oの場合には非結合電子対を有するヘテロ原子であり、これはMに配位し、
Eは各々の出現について同一であるか異なり、sp2混成炭素原子または窒素原子であり、
Cyは各々の出現について同一であるか異なり、同素環または複素環であり、これはsp2混成炭素原子または非結合電子対を有するヘテロ原子を介してMに結合しており、またこれには1つ以上のR基が任意に結合しており、
Yは、A=NRの場合には、各々の出現について同一であるか異なり、CR2、C(=O)、C(=NR)、C(=N−NR2)、C(=CR2)、SiR2、O、S、S(=O)、S(=O)2、Se、NR、PR、P(=O)R、AsR、As(=O)RまたはBRであり、A=Oの場合にはCR-であり、
R、R1は各々の出現について同一であるか異なり、H、F、Cl、Br、I、CN、B(OH)2、B(OR2)2、NO2、1〜40個のC原子を有する直鎖のアルキル基若しくはアルコキシ基、または3〜40個のC原子を有する分枝の若しくは環状のアルキル基若しくはアルコキシ基であり、ここで、1つ以上の非隣接のCH2基は、−R2C=CR2−、−C≡C−、Si(R2)2、Ge(R2)2、Sn(R2)2、−O−、−S−,−NR2−、−(C=O)−、−(C=NR2)−、−P=O(R2)−、または−CONR2−により置き換えられていてもよく、また1つ以上のH原子はF、Cl、Br若しくはIにより置き換えられていてもよく、または5〜40個のC原子を有する芳香族環系若しくは複素芳香族環系若しくはアリールオキシ基若しくはヘテロアリールオキシ基であり、これらは1つ以上の非芳香族基Rにより置換されていてもよく、ここでRはCyと共にさらなる脂肪族環系または芳香族環系を形成していてもよく、
R2は各々の出現について同一であるか異なり、Hまたは1〜20個のC原子を有する脂肪族炭化水素基又は芳香族炭化水素基であり、ここで個々のH原子はFにより置き換えられていてもよく、2つ以上のR2基は互いに環系を形成していてもよく、
nは1、2または3である)。
(式中、M、A、Y、R、R1、R2、L’、L’’、n、mおよびoは上記したものと同じ意味を有し、以下が他の記号には適用される:
Dは、A=NRの場合にはsp2混成炭素原子であり、これはMに結合し、またA=Oの場合には窒素またはリン、好ましくは窒素であり、これは非結合電子対によりMに配位しており、
Xは各々の出現について同一であるか異なり、CR1、NまたはPであり、または
(X−X)または(X=X)(すなわち、2つの隣り合うX)は、NR1、SまたはOを表し、または
(X−X)または(X=X)(すなわち、2つの隣り合うX)は、記号EがNを表す場合にはCR1、NまたはPを表し、但しCyは5員環または6員環を表し、
Eは各々の出現について同一であるか異なり、CまたはNであり、但し記号EがNを表す場合に、Cyにおける正確に1つの単位X−X(すなわち二つの隣り合うX)はCR1、NまたはPである)。
(式中、M、Y、D、R、R1、R2、L’’、n、mおよびoは上記したものと同じ意味を有し、さらに、
Xは各々の出現について同一であるか異なり、CR1またはNであり、または
(X−X)または(X=X)(すなわち、2つの隣り合うX)は、NR1、SまたはOを表し、但しCyは5員環または6員環を表し、
Qは各々の出現について同一であるか異なり、−CR1=CR1−、−N=CR1−、−N=N−、NR1、OまたはSである)。
Zは各々の出現について同一であるか異なり、二価の基である−C(R1)2−、−C(=O)−、−C[=C(R1)2]−、−C(R1)2−C(R1)2−、−C(R1)2−C(R1)2−C(R1)2−、−C(R1)2−O−C(R1)2−、−C(R1)2−N(R1)−、−C(R1)=C(R1)−、−C(R1)=N−、−O−、−S−、−N(R1)−、−P(R1)−、−P(=O)(R1)−または−B(R1)−である)。
1.本発明による化合物は、高い温度安定性により特徴づけられる。つまり、低分子量化合物は分解を伴わずに高真空下で蒸発させることができ、オリゴマー、デンドリマーおよびポリマー化合物も非常に熱的に安定であり、デバイスを損傷なく熱的に処理することを可能にする。この性質は、OLEDの再現性ある製造のための基本的な必要条件であり、特に、動作寿命に対して好ましい効果を有する。従って、これらレアメタルの化合物の資源保護的な利用がさらに可能である。というのは、錯体を精製中に実質的に全く損失なく昇華させることができるためである。
以下の合成を、他に示さない限り、保護ガス雰囲気下で行う。出発材料はアルドリッチまたはABCRから購入することができる。
本発明によるエレクトロルミネセンスデバイスを、例えばWO 05/003253に記載されるように製造することができる。2つの異なるOLEDについての結果をここで比較する。基本構造、用いた材料、ドープの程度、および層の厚さはより良い比較のために同一である。発光層におけるドーパントのみが異なる。例3は従来技術による比較標準を記載し、ここで発光層は、マトリックス材料CBPとゲスト材料であるトリス(フェニルイソキノリン)イリジウム(Ir(piq)3)から成る。マトリックス材料CBPとゲスト材料Ir1およびIr2から成る発光層を含むOLEDをさらに記載する(例4および5)。以下の構造を有するOLEDを上記した一般方法と同様にして製造する:
PEDOT 60nm(水からスピンコーティング;H.C.シュターク(Starck)、ゴスラーから購入したPEDOT;ポリ−[3,4−エチレンジオキシ−2,5−チオフェン])(HIL)
NaphDATA 20nm(蒸着;SynTecから購入したNaphDATA;4,4’,4’’−トリス(N−1−ナフチル−N−フェニルアミノ)トリフェニルアミン)(HTL)
S−TAD 20nm(蒸着;WO 99/12888に従って合成したS−TAD;2,2’,7,7’−テトラキス(ジフェニルアミノ)スピロビフルオレン)(HTL)
発光層:(EML)
CBP 20nm(蒸着;アルドリッチから購入したCBPをさらに精製し、最終的に2回昇華させる;4,4’−ビス(N−カルバゾリル)ビフェニル)
Ir1およびIr2 (10%ドープ、蒸着;例1および2に従って合成)
または
Ir(piq)3 (10%ドープ、蒸着;WO 03/0068526に従って合成)、比較例
BCP 10nm(蒸着;ABCRから購入したBCPをそのまま用いる;2,9−ジメチル−4,7−ジフェニル−1,10−フェナントロリン)(HBL)
AlQ3 10nm(蒸着;SynTecから購入したAlQ3;トリス(キノリナト)アルミニウム(III))(ETL)
LiF 1nm
Al 100nm。
本発明によるドーパントIr1およびIr2、および従来技術による比較材料Ir(piq)3を、WO 04/093207に記載されるマトリックス材料M1を含むOLEDにおいて試験する。以下の構造を有するOLEDを、例3〜5に記載した方法と同様にして製造する:
PEDOT 80nm(水からスピンコーティング;H.C.シュターク,ゴスラーから購入したPEDOT;ポリ−[3,4−エチレンジオキシ−2,5−チオフェン])(HIL)
NaphDATA 20nm(蒸着;SynTecから購入したNaphDATA;4,4’,4’’−トリス(N−1−ナフチル−N−フェニルアミノ)トリフェニルアミン)(HTL)
S−TAD 20nm(蒸着;WO 99/12888に従って合成したS−TAD;2,2’,7,7’−テトラキス(ジフェニルアミノ)スピロビフルオレン)(HTL)
発光層:(EML)
M1 ビス(9,9’−スピロビフルオレン−2−イル)ケトン(蒸着;WO 2004/093207に従って合成)
Ir1およびIr2(10%ドープ、蒸着;例1および2に従って合成)
または
Ir(piq)3 (10%ドープ、蒸着;WO 03/0068526に従って合成)
HBM1 2,7−ビス(4−ビフェニル−1−イル)−2’,7’−ジ−tert−ブチルスピロ−9,9’−ビフルオレン(蒸着;WO 05/011334に従って合成)
AlQ3 (蒸着;SynTecから購入したAlQ3;トリス(キノリナト)アルミニウム(III))(ETL)
Ba/Al 3nmのBa,この上に150nmのAl。
Claims (8)
- 式(1)
M(L)n(L’)m(L’’)o 式(1)
の化合物であって、
式(2b)
(式中、以下が用いられる記号および添え字に適用される:
Mはイリジウムである;
Yは、各々の出現について同一であるか異なり、CR2、C(=O)、またはC(=CR2)である;
Xは、各々の出現について同一であるか異なり、CR 1 またはNである;
R、R1は各々の出現について同一であるか異なり、H、F、1〜40個のC原子を有する直鎖のアルキル基、または1〜40個のC原子を有する分枝の若しくは環状のアルキル基であり、ここで、1つ以上の非隣接のCH2基は、−R2C=CR2 −によりそれぞれ置き換えられていてもよく、また1つ以上のH原子はFにより置き換えられていてもよく、または5〜40個のC原子を有する芳香族環系であり、これらは1〜40個のC原子を有するアルキル基により置換されていてもよく、さらに、RはR 1と共に5員環または6員環をさらに形成してもよい、
R2は各々の出現について同一であるか異なり、Hまたは1〜20個のC原子を有する脂肪族炭化水素基または芳香族炭化水素基であり、ここで個々のH原子はFにより置き換えられていてもよく、
nは1、2または3である;
式(1)の配位子L’は、以下の式の配位子である
DはNであり;
Qは各々の出現について同一であるか異なり、−CR 1 =CR 1 −、または−N=CR 1 −である)
式(1)の配位子L’’は、1,3−ジケトナート配位子である;mおよびoは各々の出現について同一であるか異なり、0、1または2である;n+m+o=3である)。 - 添え字n=2または3であることを特徴とする請求項1または2に記載の化合物。
- 記号X=CR1であることを特徴とする請求項1〜3のいずれか一項に記載の化合物。
- 構造(1)〜(33)から選択され、これらはR1により置換されているか、または置換されていないことを特徴とする請求項1〜4のいずれか一項に記載の化合物。
- 電子部品における発光化合物としての請求項1〜5のいずれか一項に記載の化合物の使用。
- 請求項1〜5のいずれか一項に記載の1種以上の化合物を含む電子部品。
- 有機およびポリマー発光ダイオード(OLED、PLED)、有機電界効果トランジスタ(O−FET)、有機薄膜トランジスタ(O−TFT)、有機集積回路(O−IC)、有機電界クエンチデバイス(organic field-quench device)(O−FQD)、有機発光トランジスタ(O−LET)、発光電気化学セル(LEC)、有機太陽電池(O−SC)、および有機レーザダイオード(O−laser)の群から選択される請求項7に記載の電子部品。
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KR102512254B1 (ko) | 2014-11-26 | 2023-03-20 | 록히드 마틴 에너지, 엘엘씨 | 치환된 카테콜레이트의 금속 착물 및 이를 포함하는 레독스 플로우 배터리 |
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CN105070837A (zh) * | 2015-08-26 | 2015-11-18 | 电子科技大学 | 一种铱类配合物掺杂的三元太阳能电池 |
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US10644342B2 (en) | 2016-03-03 | 2020-05-05 | Lockheed Martin Energy, Llc | Coordination complexes containing monosulfonated catecholate ligands and methods for producing the same |
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US10377687B2 (en) | 2016-07-26 | 2019-08-13 | Lockheed Martin Energy, Llc | Processes for forming titanium catechol complexes |
US10343964B2 (en) | 2016-07-26 | 2019-07-09 | Lockheed Martin Energy, Llc | Processes for forming titanium catechol complexes |
US10065977B2 (en) | 2016-10-19 | 2018-09-04 | Lockheed Martin Advanced Energy Storage, Llc | Concerted processes for forming 1,2,4-trihydroxybenzene from hydroquinone |
US10930937B2 (en) | 2016-11-23 | 2021-02-23 | Lockheed Martin Energy, Llc | Flow batteries incorporating active materials containing doubly bridged aromatic groups |
US10497958B2 (en) | 2016-12-14 | 2019-12-03 | Lockheed Martin Energy, Llc | Coordinatively unsaturated titanium catecholate complexes and processes associated therewith |
US10741864B2 (en) | 2016-12-30 | 2020-08-11 | Lockheed Martin Energy, Llc | Aqueous methods for forming titanium catecholate complexes and associated compositions |
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