JP5207251B2 - 有機光電変換膜及びこれを含む電子素子 - Google Patents
有機光電変換膜及びこれを含む電子素子 Download PDFInfo
- Publication number
- JP5207251B2 JP5207251B2 JP2009056910A JP2009056910A JP5207251B2 JP 5207251 B2 JP5207251 B2 JP 5207251B2 JP 2009056910 A JP2009056910 A JP 2009056910A JP 2009056910 A JP2009056910 A JP 2009056910A JP 5207251 B2 JP5207251 B2 JP 5207251B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- organic
- conversion film
- film
- organic photoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 117
- 239000011368 organic material Substances 0.000 claims description 52
- 238000000576 coating method Methods 0.000 claims description 22
- 239000003960 organic solvent Substances 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 21
- 238000009835 boiling Methods 0.000 claims description 8
- 238000011282 treatment Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 229920002098 polyfluorene Polymers 0.000 claims description 4
- 150000003967 siloles Chemical class 0.000 claims description 4
- 239000010408 film Substances 0.000 description 107
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 22
- 239000000758 substrate Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 12
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 238000002156 mixing Methods 0.000 description 9
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 8
- 229920001940 conductive polymer Polymers 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000005361 soda-lime glass Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000007865 diluting Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000013557 residual solvent Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- VBVAVBCYMYWNOU-UHFFFAOYSA-N coumarin 6 Chemical compound C1=CC=C2SC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 VBVAVBCYMYWNOU-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- KTCXDIGJYUOQBJ-UHFFFAOYSA-N 1,1-dimethyl-2,3,4,5-tetraphenylsilole Chemical compound C[Si]1(C)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 KTCXDIGJYUOQBJ-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- 239000005964 Acibenzolar-S-methyl Substances 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Description
基板10としてソーダライムガラス(20mm×20mm×0.7mm)を用い、基板10の片側表面にスパッタリング法により、厚み150nm、シート抵抗15Ω・cmのITO膜を透明電極20として形成した。
基板10としてソーダライムガラス(20mm×20mm×0.7mm)を用い、基板10の片側表面にスパッタリング法により、厚み150nm、シート抵抗15Ω・cmのITO膜を透明電極20として形成した。
基板10としてソーダライムガラス(20mm×20mm×0.7mm)を用い、基板10の片側表面にスパッタリング法により、厚み150nm、シート抵抗15Ω・cmのITO膜を透明電極20として形成した。
基板10としてソーダライムガラス(20mm×20mm×0.7mm)を用い、基板10の片側表面にスパッタリング法により、厚み150nm、シート抵抗15Ω・cmのITO膜を透明電極20として形成した。
2 撮像素子
10 基板
10A 光入射面
20 透明電極
30 有機光電変換膜
31 ドナー性有機材料
32 アクセプター性有機材料
40 対向電極
41、42 画素電極
41A、42A a−SiTFT
100 信号読出回路
Claims (3)
- 電子供与性の第1有機材料と電子受容性の第2有機材料とを有機溶媒に溶解させて塗布する塗布処理により形成される有機光電変換膜において、
前記第1有機材料はポリフルオレン誘導体であり、前記第2有機材料はシロール誘導体であり、かつ、前記有機溶媒を膜内に含む、有機光電変換膜。 - 前記塗布処理の後に行う熱処理を前記有機溶媒の沸点以下の温度で行うことにより形成される、請求項1に記載の有機光電変換膜。
- 請求項1又は2記載の有機光電変換膜を含む電子素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009056910A JP5207251B2 (ja) | 2009-03-10 | 2009-03-10 | 有機光電変換膜及びこれを含む電子素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009056910A JP5207251B2 (ja) | 2009-03-10 | 2009-03-10 | 有機光電変換膜及びこれを含む電子素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010212455A JP2010212455A (ja) | 2010-09-24 |
JP5207251B2 true JP5207251B2 (ja) | 2013-06-12 |
Family
ID=42972329
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009056910A Expired - Fee Related JP5207251B2 (ja) | 2009-03-10 | 2009-03-10 | 有機光電変換膜及びこれを含む電子素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5207251B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012238774A (ja) * | 2011-05-13 | 2012-12-06 | Fujifilm Corp | 撮像装置 |
JP5673343B2 (ja) * | 2011-05-18 | 2015-02-18 | コニカミノルタ株式会社 | 有機光電変換素子およびその製造方法 |
US10516124B2 (en) * | 2015-06-11 | 2019-12-24 | Sony Corporation | Photoelectric conversion elements, method of manufacturing photoelectric conversion element, and solid-state imaging device |
JP7269308B2 (ja) * | 2018-03-07 | 2023-05-08 | 株式会社ジャパンディスプレイ | 検出装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4955954B2 (ja) * | 2005-03-04 | 2012-06-20 | パナソニック株式会社 | 積層型有機太陽電池 |
JP2006352044A (ja) * | 2005-06-20 | 2006-12-28 | Matsushita Electric Works Ltd | 機能性有機材料素子及び有機太陽電池 |
JP2008258320A (ja) * | 2007-04-03 | 2008-10-23 | Mitsubishi Chemicals Corp | 有機電界発光素子 |
JP2008305995A (ja) * | 2007-06-07 | 2008-12-18 | Fuji Xerox Co Ltd | 有機電界発光素子及び表示装置 |
-
2009
- 2009-03-10 JP JP2009056910A patent/JP5207251B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2010212455A (ja) | 2010-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Li et al. | Enhanced photoresponse of self-powered perovskite photodetector based on ZnO nanoparticles decorated CsPbBr3 films | |
Luo et al. | Iodide-reduced graphene oxide with dopant-free spiro-OMeTAD for ambient stable and high-efficiency perovskite solar cells | |
KR101165656B1 (ko) | 유기 광전 변환 소자의 제조 방법 및 유기 광전 변환 소자 | |
JP6219172B2 (ja) | ゲインを有する光検出器及びアップコンバージョン装置(ec) | |
Chen et al. | Graphene as a transparent and conductive electrode for organic optoelectronic devices | |
US8866265B2 (en) | Carbon-based semiconductors | |
EP1909341A1 (en) | Organic power generating device | |
JP6600670B2 (ja) | 光電変換素子、その製造方法、およびその製造装置 | |
WO2010114116A1 (ja) | 有機光電変換素子、それを用いた太陽電池および光センサアレイ | |
JP2008016834A (ja) | 有機光電変換素子の製造方法及び有機光電変換素子 | |
JP2017054939A (ja) | 有機光電変換素子、及び固体撮像素子 | |
WO2017115646A1 (ja) | 光電変換素子および撮像装置 | |
JP5207251B2 (ja) | 有機光電変換膜及びこれを含む電子素子 | |
JP5673343B2 (ja) | 有機光電変換素子およびその製造方法 | |
Kim et al. | High-performance nip-type perovskite photodetectors employing graphene-transparent conductive electrodes N-type doped with amine group molecules | |
JP5585066B2 (ja) | 有機薄膜型太陽電池及びその製造方法 | |
JP2006270061A (ja) | 光起電力素子 | |
JP2011054869A (ja) | 有機光電変換素子、及び、これを含むイメージセンサ | |
US9178171B2 (en) | Photovoltaic cell and method for manufacturing the same | |
Barbot et al. | Cesium carbonate-doped 1, 4, 5, 8-naphthalene-tetracarboxylic-dianhydride used as efficient electron transport material in polymer solar cells | |
JP5715796B2 (ja) | 有機光電変換素子の製造方法 | |
JP2015099810A (ja) | 有機光電変換素子の製造方法 | |
JP6032284B2 (ja) | 有機光電変換素子の製造方法 | |
Landerer et al. | New directions for organic thin-film solar cells: stability and performance | |
JP7470752B2 (ja) | 特定の波長を有する光を自己フィルタリングするフォトダイオードの構造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111007 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20111007 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130115 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130212 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160301 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |