JP5202941B2 - 複数の狭区画レイアウトを用いたひずみデバイス及びその製造方法 - Google Patents
複数の狭区画レイアウトを用いたひずみデバイス及びその製造方法 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Description
Ito等、「Mechanical Stress Effect of Etch-Stop Nitride and Its Impact on Deep Submicron Transistor Design」、IEDM-2001、2001年、433-436頁
Claims (20)
- ソース領域及びドレイン領域を有する基板を設ける工程であり、該ソース領域及び該ドレイン領域の各々が複数の分離された区画を含む、工程;
前記ソース領域の各2つの分離された区画間及び前記ドレイン領域の各2つの分離された区画間にSTI領域を作り出す工程であり、該STI領域は前記ソース領域の頂面及び前記ドレイン領域の頂面より下方に頂面を有する、工程;
前記基板上で前記ソース領域と前記ドレイン領域との間に1つのゲート積層体を形成する工程;
前記STI領域を形成した後に、前記ソース領域及び前記ドレイン領域内にそれぞれソース及びドレインを作り出すために前記基板に注入する工程;及び
前記基板上に引張応力誘起層を形成する工程であり、該引張応力誘起層は、前記STI領域、前記ソース領域及び前記ドレイン領域の直上に形成される、工程;
を有する半導体デバイスの製造方法。 - 前記基板上に前記引張応力誘起層を形成する工程に先立って、前記ソース領域、前記ドレイン領域及び前記ゲート積層体上にシリサイド層を形成する工程;
をさらに有する請求項1に記載の製造方法。 - 前記ゲート積層体は、ゲート誘電体膜上に形成されたゲート電極層を含む、請求項1に記載の製造方法。
- 前記ソース領域、前記ドレイン領域及び前記ゲート積層体へのコンタクトを作り出す工程;
をさらに有する請求項1に記載の製造方法。 - 前記引張応力誘起層は窒化物エッチング停止層である、請求項1に記載の製造方法。
- 前記引張応力誘起層は前記基板のチャネル領域に引張応力を導入する、請求項1に記載の製造方法。
- 前記基板は、シリコンを有する基板、単結晶シリコン基板、ゲルマニウムシリコン基板及びシリコン・オン・インシュレータ基板の何れかである、請求項1に記載の製造方法。
- 前記引張応力誘起層が約25nmと約150nmとの間の厚さに到達するまで、前記基板上に前記引張応力誘起層を形成する工程を継続することをさらに有する請求項1に記載の製造方法。
- 前記引張応力誘起層は、前記基板に約200MPaと約300MPaとの間の範囲の引張応力を導入する、請求項1に記載の製造方法。
- 前記引張応力誘起層の形状が前記基板の露出表面に従う、請求項1に記載の製造方法。
- ソース領域及びドレイン領域を有する基板であり、該ソース領域及び該ドレイン領域の各々が複数の分離された区画を含む、基板;
前記ソース領域の各2つの分離された区画間及び前記ドレイン領域の各2つの分離された区画間に形成されたSTI領域であり、前記ソース領域の頂面及び前記ドレイン領域の頂面より下方に頂面を有するSTI領域;
前記基板上で前記ソース領域と前記ドレイン領域との間に形成された1つのゲート積層体;及び
前記基板上に形成された、前記STI領域、前記ソース領域及び前記ドレイン領域の直上の引張応力誘起層;
を有する半導体デバイス。 - 前記ソース領域、前記ドレイン領域及び前記ゲート積層体上に形成されたシリサイド層であり、前記基板上に形成された前記引張応力誘起層が該シリサイド層上に形成されている、シリサイド層;
をさらに有する請求項11に記載の半導体デバイス。 - 前記ゲート積層体はゲート電極層及びゲート誘電体膜を含む、請求項11に記載の半導体デバイス。
- 前記ソース領域、前記ドレイン領域及び前記ゲート積層体に相互接続されたコンタクト;
をさらに有する請求項11に記載の半導体デバイス。 - 前記引張応力誘起層は窒化物エッチング停止層である、請求項11に記載の半導体デバイス。
- 前記引張応力誘起層は前記基板のチャネル領域に引張応力を導入している、請求項11に記載の半導体デバイス。
- 前記基板は、シリコンを有する基板、単結晶シリコン基板、ゲルマニウムシリコン基板及びシリコン・オン・インシュレータ基板の何れかである、請求項11に記載の半導体デバイス。
- 前記引張応力誘起層は約25nmと約150nmとの間の厚さを有する、請求項11に記載の半導体デバイス。
- 前記引張応力誘起層は、前記基板に約200MPaと約300MPaとの間の範囲の引張応力を導入している、請求項11に記載の半導体デバイス。
- 前記引張応力誘起層は等方的な層である、請求項11に記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/815,911 US7101765B2 (en) | 2004-03-31 | 2004-03-31 | Enhancing strained device performance by use of multi narrow section layout |
US10/815,911 | 2004-03-31 | ||
PCT/US2005/010159 WO2005098962A1 (en) | 2004-03-31 | 2005-03-25 | Enhancing strained device performance by use of multi narrow section layout |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007531323A JP2007531323A (ja) | 2007-11-01 |
JP5202941B2 true JP5202941B2 (ja) | 2013-06-05 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007506400A Expired - Fee Related JP5202941B2 (ja) | 2004-03-31 | 2005-03-25 | 複数の狭区画レイアウトを用いたひずみデバイス及びその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7101765B2 (ja) |
EP (1) | EP1730786B1 (ja) |
JP (1) | JP5202941B2 (ja) |
CN (1) | CN1957475B (ja) |
AT (1) | ATE467233T1 (ja) |
DE (1) | DE602005021076D1 (ja) |
TW (1) | TWI267118B (ja) |
WO (1) | WO2005098962A1 (ja) |
Families Citing this family (14)
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US7642205B2 (en) | 2005-04-08 | 2010-01-05 | Mattson Technology, Inc. | Rapid thermal processing using energy transfer layers |
US20070010070A1 (en) * | 2005-07-05 | 2007-01-11 | International Business Machines Corporation | Fabrication of strained semiconductor-on-insulator (ssoi) structures by using strained insulating layers |
US7420202B2 (en) | 2005-11-08 | 2008-09-02 | Freescale Semiconductor, Inc. | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device |
JP4951978B2 (ja) * | 2006-01-13 | 2012-06-13 | ソニー株式会社 | 半導体装置及びその製造方法 |
US7538002B2 (en) * | 2006-02-24 | 2009-05-26 | Freescale Semiconductor, Inc. | Semiconductor process integrating source/drain stressors and interlevel dielectric layer stressors |
US20100224941A1 (en) * | 2006-06-08 | 2010-09-09 | Nec Corporation | Semiconductor device |
US7541239B2 (en) | 2006-06-30 | 2009-06-02 | Intel Corporation | Selective spacer formation on transistors of different classes on the same device |
US7824968B2 (en) * | 2006-07-17 | 2010-11-02 | Chartered Semiconductor Manufacturing Ltd | LDMOS using a combination of enhanced dielectric stress layer and dummy gates |
US8569858B2 (en) | 2006-12-20 | 2013-10-29 | Freescale Semiconductor, Inc. | Semiconductor device including an active region and two layers having different stress characteristics |
US7843011B2 (en) | 2007-01-31 | 2010-11-30 | Freescale Semiconductor, Inc. | Electronic device including insulating layers having different strains |
CN101320711B (zh) * | 2007-06-05 | 2010-11-17 | 联华电子股份有限公司 | 金属氧化物半导体晶体管及其制作方法 |
US8877576B2 (en) * | 2007-08-23 | 2014-11-04 | Infineon Technologies Ag | Integrated circuit including a first channel and a second channel |
JP5712985B2 (ja) * | 2012-08-27 | 2015-05-07 | ソニー株式会社 | 半導体装置 |
KR102404973B1 (ko) | 2015-12-07 | 2022-06-02 | 삼성전자주식회사 | 반도체 장치 |
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JPH08130295A (ja) * | 1994-09-08 | 1996-05-21 | Mitsubishi Electric Corp | 半導体記憶装置および半導体装置 |
US6607948B1 (en) * | 1998-12-24 | 2003-08-19 | Kabushiki Kaisha Toshiba | Method of manufacturing a substrate using an SiGe layer |
JP2001085691A (ja) * | 1999-09-17 | 2001-03-30 | Toshiba Corp | 半導体装置 |
JP2001185721A (ja) * | 1999-12-22 | 2001-07-06 | Nec Corp | 半導体装置 |
US6368931B1 (en) * | 2000-03-27 | 2002-04-09 | Intel Corporation | Thin tensile layers in shallow trench isolation and method of making same |
US6563152B2 (en) * | 2000-12-29 | 2003-05-13 | Intel Corporation | Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channel |
JP2003060076A (ja) * | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
EP1428262A2 (en) * | 2001-09-21 | 2004-06-16 | Amberwave Systems Corporation | Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same |
JP2003179157A (ja) * | 2001-12-10 | 2003-06-27 | Nec Corp | Mos型半導体装置 |
JP3997089B2 (ja) * | 2002-01-10 | 2007-10-24 | 株式会社ルネサステクノロジ | 半導体装置 |
US6492216B1 (en) * | 2002-02-07 | 2002-12-10 | Taiwan Semiconductor Manufacturing Company | Method of forming a transistor with a strained channel |
JP4173672B2 (ja) * | 2002-03-19 | 2008-10-29 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
JP4030383B2 (ja) * | 2002-08-26 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
US6573172B1 (en) * | 2002-09-16 | 2003-06-03 | Advanced Micro Devices, Inc. | Methods for improving carrier mobility of PMOS and NMOS devices |
US6657223B1 (en) * | 2002-10-29 | 2003-12-02 | Advanced Micro Devices, Inc. | Strained silicon MOSFET having silicon source/drain regions and method for its fabrication |
US6882025B2 (en) * | 2003-04-25 | 2005-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained-channel transistor and methods of manufacture |
US7205206B2 (en) * | 2004-03-03 | 2007-04-17 | International Business Machines Corporation | Method of fabricating mobility enhanced CMOS devices |
-
2004
- 2004-03-31 US US10/815,911 patent/US7101765B2/en not_active Expired - Fee Related
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2005
- 2005-03-25 AT AT05731209T patent/ATE467233T1/de not_active IP Right Cessation
- 2005-03-25 CN CN200580010842.4A patent/CN1957475B/zh not_active Expired - Fee Related
- 2005-03-25 EP EP05731209A patent/EP1730786B1/en not_active Not-in-force
- 2005-03-25 DE DE602005021076T patent/DE602005021076D1/de active Active
- 2005-03-25 WO PCT/US2005/010159 patent/WO2005098962A1/en not_active Application Discontinuation
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Publication number | Publication date |
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CN1957475A (zh) | 2007-05-02 |
US7482670B2 (en) | 2009-01-27 |
EP1730786A1 (en) | 2006-12-13 |
CN1957475B (zh) | 2010-05-12 |
US7101765B2 (en) | 2006-09-05 |
US20050221566A1 (en) | 2005-10-06 |
US20060208337A1 (en) | 2006-09-21 |
TWI267118B (en) | 2006-11-21 |
TW200535975A (en) | 2005-11-01 |
WO2005098962A1 (en) | 2005-10-20 |
EP1730786B1 (en) | 2010-05-05 |
JP2007531323A (ja) | 2007-11-01 |
ATE467233T1 (de) | 2010-05-15 |
DE602005021076D1 (de) | 2010-06-17 |
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