JP5202236B2 - 微小電気機械スイッチ及びその作製方法 - Google Patents

微小電気機械スイッチ及びその作製方法 Download PDF

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Publication number
JP5202236B2
JP5202236B2 JP2008284391A JP2008284391A JP5202236B2 JP 5202236 B2 JP5202236 B2 JP 5202236B2 JP 2008284391 A JP2008284391 A JP 2008284391A JP 2008284391 A JP2008284391 A JP 2008284391A JP 5202236 B2 JP5202236 B2 JP 5202236B2
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Japan
Prior art keywords
electrode layer
drive electrode
switch
layer
overlap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2008284391A
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English (en)
Japanese (ja)
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JP2009140914A5 (enExample
JP2009140914A (ja
Inventor
真弓 三上
小波 泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008284391A priority Critical patent/JP5202236B2/ja
Publication of JP2009140914A publication Critical patent/JP2009140914A/ja
Publication of JP2009140914A5 publication Critical patent/JP2009140914A5/ja
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H59/00—Electrostatic relays; Electro-adhesion relays
    • H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
    • H01H2059/0072—Electrostatic relays; Electro-adhesion relays making use of micromechanics with stoppers or protrusions for maintaining a gap, reducing the contact area or for preventing stiction between the movable and the fixed electrode in the attracted position

Landscapes

  • Micromachines (AREA)
JP2008284391A 2007-11-13 2008-11-05 微小電気機械スイッチ及びその作製方法 Expired - Fee Related JP5202236B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008284391A JP5202236B2 (ja) 2007-11-13 2008-11-05 微小電気機械スイッチ及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007293964 2007-11-13
JP2007293964 2007-11-13
JP2008284391A JP5202236B2 (ja) 2007-11-13 2008-11-05 微小電気機械スイッチ及びその作製方法

Publications (3)

Publication Number Publication Date
JP2009140914A JP2009140914A (ja) 2009-06-25
JP2009140914A5 JP2009140914A5 (enExample) 2011-11-10
JP5202236B2 true JP5202236B2 (ja) 2013-06-05

Family

ID=40328452

Family Applications (1)

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JP2008284391A Expired - Fee Related JP5202236B2 (ja) 2007-11-13 2008-11-05 微小電気機械スイッチ及びその作製方法

Country Status (3)

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US (1) US8324694B2 (enExample)
EP (1) EP2061056B1 (enExample)
JP (1) JP5202236B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5100670B2 (ja) 2009-01-21 2012-12-19 株式会社半導体エネルギー研究所 タッチパネル、電子機器
US10183857B2 (en) * 2012-08-21 2019-01-22 Robert Bosch Gmbh MEMS pressure sensor with multiple membrane electrodes
CN110944936A (zh) 2017-06-19 2020-03-31 芬兰国家技术研究中心股份公司 电容性微结构
RU2705792C1 (ru) * 2018-12-26 2019-11-12 федеральное государственное автономное образовательное учреждение высшего образования "Южный федеральный университет" (Южный федеральный университет) Интегральный микроэлектромеханический переключатель

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60247622A (ja) 1984-05-23 1985-12-07 Oki Electric Ind Co Ltd 液晶表示装置
USRE33691E (en) * 1984-12-21 1991-09-17 General Electric Company Piezoelectric ceramic switching devices and systems and method of making the same
US4939401A (en) * 1989-07-17 1990-07-03 General Electric Company Method and system for activation of a piezoelectric bender switch
US5578976A (en) * 1995-06-22 1996-11-26 Rockwell International Corporation Micro electromechanical RF switch
JPH0992909A (ja) 1995-09-21 1997-04-04 Casio Comput Co Ltd スイッチング素子、スイッチング素子の製造方法、およびスイッチング素子を用いた表示装置
JPH11174994A (ja) 1997-12-11 1999-07-02 Sharp Corp 表示装置
US6037719A (en) * 1998-04-09 2000-03-14 Hughes Electronics Corporation Matrix-addressed display having micromachined electromechanical switches
JP3865942B2 (ja) 1998-07-17 2007-01-10 富士フイルムホールディングス株式会社 アクティブマトリクス素子、及びアクティブマトリクス素子を用いた発光素子、光変調素子、光検出素子、露光素子、表示装置
JP2000188049A (ja) * 1998-12-22 2000-07-04 Nec Corp マイクロマシンスイッチおよびその製造方法
JP3119255B2 (ja) * 1998-12-22 2000-12-18 日本電気株式会社 マイクロマシンスイッチおよびその製造方法
JP3590283B2 (ja) 1999-01-13 2004-11-17 日本電信電話株式会社 静電型可動接点素子の製造方法
JP3185793B2 (ja) 1999-07-19 2001-07-11 松下電器産業株式会社 液晶表示素子
US6515791B1 (en) * 2001-04-06 2003-02-04 Read-Rite Corporation Active reflection and anti-reflection optical switch
US7057251B2 (en) * 2001-07-20 2006-06-06 Reflectivity, Inc MEMS device made of transition metal-dielectric oxide materials
US20040031670A1 (en) 2001-10-31 2004-02-19 Wong Marvin Glenn Method of actuating a high power micromachined switch
US20030080839A1 (en) * 2001-10-31 2003-05-01 Wong Marvin Glenn Method for improving the power handling capacity of MEMS switches
US6657525B1 (en) 2002-05-31 2003-12-02 Northrop Grumman Corporation Microelectromechanical RF switch
KR100467318B1 (ko) * 2002-06-04 2005-01-24 한국전자통신연구원 저항식 전자기계적 접촉을 이용하는 미세전자기계적 소자
US7323805B2 (en) * 2004-01-28 2008-01-29 Kabushiki Kaisha Toshiba Piezoelectric thin film device and method for manufacturing the same
US7352266B2 (en) * 2004-02-20 2008-04-01 Wireless Mems, Inc. Head electrode region for a reliable metal-to-metal contact micro-relay MEMS switch
US7633213B2 (en) * 2005-03-15 2009-12-15 Panasonic Corporation Actuator, switch using the actuator, and method of controlling the actuator
US8043950B2 (en) * 2005-10-26 2011-10-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100693345B1 (ko) * 2005-11-30 2007-03-09 삼성전자주식회사 Ｍｅｍｓ 스위치
KR101092536B1 (ko) * 2005-11-30 2011-12-13 삼성전자주식회사 압전형 ｒｆ 멤스 소자 및 그 제조방법
US7679186B2 (en) * 2005-12-08 2010-03-16 Electronics And Telecommunications Research Institute Piezolectric micro electro-mechanical system switch, array of the switches, and method of fabricating the same
US7741687B2 (en) * 2006-03-10 2010-06-22 Semiconductor Energy Laboratory Co., Ltd. Microstructure, semiconductor device, and manufacturing method of the microstructure
JP2007293964A (ja) 2006-04-24 2007-11-08 Hitachi Global Storage Technologies Netherlands Bv 磁気ディスクの消磁装置及び消磁方法
KR101416512B1 (ko) * 2006-05-18 2014-07-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 미소 구조체, 마이크로머신, 미소 구조체 및 마이크로머신의 제조방법
EP1976015B1 (en) * 2007-03-26 2014-09-10 Semiconductor Energy Laboratory Co., Ltd. Switching element, method for manufacturing the same, and display device including switching element

Also Published As

Publication number Publication date
EP2061056A3 (en) 2010-03-03
US8324694B2 (en) 2012-12-04
US20090127081A1 (en) 2009-05-21
EP2061056A2 (en) 2009-05-20
JP2009140914A (ja) 2009-06-25
EP2061056B1 (en) 2015-09-30

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