JP5191541B2 - 極端紫外線を生成するモジュールおよび方法、並びにリソグラフィ投影装置 - Google Patents

極端紫外線を生成するモジュールおよび方法、並びにリソグラフィ投影装置 Download PDF

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Publication number
JP5191541B2
JP5191541B2 JP2010521804A JP2010521804A JP5191541B2 JP 5191541 B2 JP5191541 B2 JP 5191541B2 JP 2010521804 A JP2010521804 A JP 2010521804A JP 2010521804 A JP2010521804 A JP 2010521804A JP 5191541 B2 JP5191541 B2 JP 5191541B2
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Japan
Prior art keywords
extreme ultraviolet
radiation
module
mirror surface
mirror
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JP2010521804A
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English (en)
Japanese (ja)
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JP2010537424A (ja
JP2010537424A5 (enExample
Inventor
エンペル，ジャーコ，アドリアーン，ルドルフ ヴァン
バニエ，バディム，エヴィジェンエビッチ
イヴァノヴ，ブラディミア，ヴィタレヴィッチ
ループストラ，エリック，ルーロフ
スホート，ジャン，ベルナルド，プレヘルムス ヴァン
デ ヴィホヴァー，ユリ，ヨハネス，ガブリエル ヴァン
スウィンケルズ，ゲラルドス，ヒューベルタス，ペトラス，マリア
シメール，ヘンドリカス，ジスバータス
ラベッツスキ，ドズミトリ
モールス，ヨハネス，フベルトゥス，ヨセフィナ
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
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Priority claimed from US12/078,663 external-priority patent/US7763871B2/en
Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2010537424A publication Critical patent/JP2010537424A/ja
Publication of JP2010537424A5 publication Critical patent/JP2010537424A5/ja
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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
JP2010521804A 2007-08-23 2008-08-25 極端紫外線を生成するモジュールおよび方法、並びにリソグラフィ投影装置 Active JP5191541B2 (ja)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US93564307P 2007-08-23 2007-08-23
US60/935,643 2007-08-23
US12/078,663 US7763871B2 (en) 2008-04-02 2008-04-02 Radiation source
US12/078,663 2008-04-02
US13614808P 2008-08-14 2008-08-14
US13614508P 2008-08-14 2008-08-14
US61/136,148 2008-08-14
US61/136,145 2008-08-14
PCT/NL2008/050567 WO2009025557A1 (en) 2007-08-23 2008-08-25 Module and method for producing extreme ultraviolet radiation

Publications (3)

Publication Number Publication Date
JP2010537424A JP2010537424A (ja) 2010-12-02
JP2010537424A5 JP2010537424A5 (enExample) 2011-10-13
JP5191541B2 true JP5191541B2 (ja) 2013-05-08

Family

ID=39968777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010521804A Active JP5191541B2 (ja) 2007-08-23 2008-08-25 極端紫外線を生成するモジュールおよび方法、並びにリソグラフィ投影装置

Country Status (4)

Country Link
JP (1) JP5191541B2 (enExample)
KR (1) KR101495208B1 (enExample)
CN (1) CN101785369A (enExample)
WO (1) WO2009025557A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9207548B2 (en) 2008-08-14 2015-12-08 Asml Netherlands B.V. Radiation source with a debris mitigation system, lithographic apparatus with a debris mitigation system, method for preventing debris from depositing on collector mirror, and device manufacturing method
EP2414898A1 (en) 2009-04-02 2012-02-08 ETH Zurich Extreme ultraviolet light source with a debris-mitigated and cooled collector optics
WO2011113591A2 (en) 2010-03-18 2011-09-22 Eth Zurich Optical collector for collecting extreme ultraviolet radiation, method for operating such an optical collector, and euv source with such a collector
WO2011116898A1 (en) 2010-03-25 2011-09-29 Eth Zurich Steering device for controlling the direction and/or velocity of droplets of a target material and extreme euv source with such a steering device
WO2011116897A1 (en) 2010-03-25 2011-09-29 Eth Zurich A beam line for a source of extreme ultraviolet (euv) radiation
WO2011131431A1 (en) * 2010-04-22 2011-10-27 Asml Netherlands B.V. Collector mirror assembly and method for producing extreme ultraviolet radiation
CN102231935A (zh) * 2011-05-31 2011-11-02 长春理工大学 一种产生相干极紫外辐射的方法及装置
DE102011086565A1 (de) * 2011-11-17 2012-11-15 Carl Zeiss Smt Gmbh Kollektor
US9453801B2 (en) 2012-05-25 2016-09-27 Kla-Tencor Corporation Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems
US9662688B2 (en) 2012-07-09 2017-05-30 Kla-Tencor Corporation Apparatus and method for cross-flow purge for optical components in a chamber
CN103108481B (zh) * 2012-11-30 2016-03-30 中国科学院微电子研究所 一种集光系统防污染保护装置
CN103064259B (zh) * 2012-12-10 2014-11-12 华中科技大学 一种极紫外激光等离子体光源碎屑的隔离方法及系统
WO2014090480A1 (en) * 2012-12-12 2014-06-19 Asml Netherlands B.V. Power source for a lithographic apparatus, and lithographic apparatus comprising such a power source
US9301382B2 (en) * 2013-12-02 2016-03-29 Asml Netherlands B.V. Apparatus for and method of source material delivery in a laser produced plasma EUV light source
WO2015086232A1 (en) 2013-12-09 2015-06-18 Asml Netherlands B.V. Radiation source device, lithographic apparatus and device manufacturing method
US10101664B2 (en) 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US10034362B2 (en) 2014-12-16 2018-07-24 Kla-Tencor Corporation Plasma-based light source
US9541840B2 (en) * 2014-12-18 2017-01-10 Asml Netherlands B.V. Faceted EUV optical element
US9625824B2 (en) 2015-04-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd Extreme ultraviolet lithography collector contamination reduction
JP6556250B2 (ja) * 2015-11-06 2019-08-07 ギガフォトン株式会社 極端紫外光生成装置
US10495987B2 (en) 2017-09-28 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Radiation source apparatus, EUV lithography system, and method for decreasing debris in EUV lithography system
JP7311296B2 (ja) 2019-04-01 2023-07-19 ギガフォトン株式会社 Ｅｕｖチャンバ装置、極端紫外光生成システム、及び電子デバイスの製造方法
JP7553296B2 (ja) * 2020-09-16 2024-09-18 ギガフォトン株式会社 極端紫外光生成装置、及び電子デバイスの製造方法
US11635700B2 (en) * 2021-02-17 2023-04-25 Kla Corporation Method and apparatus for EUV mask inspection

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US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
SG153664A1 (en) * 2002-09-19 2009-07-29 Asml Netherlands Bv Radiation source, lithographic apparatus, and device manufacturing method
US7164144B2 (en) * 2004-03-10 2007-01-16 Cymer Inc. EUV light source
JP4578901B2 (ja) * 2004-09-09 2010-11-10 株式会社小松製作所 極端紫外光源装置
JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
DE102005015274B4 (de) * 2005-03-31 2012-02-23 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung kurzwelliger Strahlung
US7365349B2 (en) * 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
JP4710463B2 (ja) * 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
JP2007134166A (ja) * 2005-11-10 2007-05-31 Ushio Inc 極端紫外光光源装置
US7372049B2 (en) * 2005-12-02 2008-05-13 Asml Netherlands B.V. Lithographic apparatus including a cleaning device and method for cleaning an optical element
US7504643B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
JP5108367B2 (ja) * 2007-04-27 2012-12-26 ギガフォトン株式会社 極端紫外光源装置

Also Published As

Publication number Publication date
KR101495208B1 (ko) 2015-02-25
KR20100063082A (ko) 2010-06-10
JP2010537424A (ja) 2010-12-02
CN101785369A (zh) 2010-07-21
WO2009025557A1 (en) 2009-02-26

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