CN101785369A - 用于产生极紫外辐射的模块和方法 - Google Patents

用于产生极紫外辐射的模块和方法 Download PDF

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Publication number
CN101785369A
CN101785369A CN200880103760A CN200880103760A CN101785369A CN 101785369 A CN101785369 A CN 101785369A CN 200880103760 A CN200880103760 A CN 200880103760A CN 200880103760 A CN200880103760 A CN 200880103760A CN 101785369 A CN101785369 A CN 101785369A
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CN
China
Prior art keywords
radiation
module
mirror surface
flow
air
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Pending
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CN200880103760A
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English (en)
Chinese (zh)
Inventor
T·A·R·范因佩尔
V·Y·班宁
V·V·伊万诺夫
E·R·鲁普斯特拉
J·B·P·范斯库特
Y·J·G·范德维杰威
G·H·P·M·斯温克尔斯
H·G·诗密尔
D·莱伯斯克依
J·H·J·摩尔斯
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ASML Netherlands BV
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ASML Netherlands BV
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Filing date
Publication date
Priority claimed from US12/078,663 external-priority patent/US7763871B2/en
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of CN101785369A publication Critical patent/CN101785369A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
CN200880103760A 2007-08-23 2008-08-25 用于产生极紫外辐射的模块和方法 Pending CN101785369A (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US93564307P 2007-08-23 2007-08-23
US60/935,643 2007-08-23
US12/078,663 2008-04-02
US12/078,663 US7763871B2 (en) 2008-04-02 2008-04-02 Radiation source
US13614808P 2008-08-14 2008-08-14
US13614508P 2008-08-14 2008-08-14
US61/136,148 2008-08-14
US61/136,145 2008-08-14
PCT/NL2008/050567 WO2009025557A1 (en) 2007-08-23 2008-08-25 Module and method for producing extreme ultraviolet radiation

Publications (1)

Publication Number Publication Date
CN101785369A true CN101785369A (zh) 2010-07-21

Family

ID=39968777

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880103760A Pending CN101785369A (zh) 2007-08-23 2008-08-25 用于产生极紫外辐射的模块和方法

Country Status (4)

Country Link
JP (1) JP5191541B2 (enExample)
KR (1) KR101495208B1 (enExample)
CN (1) CN101785369A (enExample)
WO (1) WO2009025557A1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231935A (zh) * 2011-05-31 2011-11-02 长春理工大学 一种产生相干极紫外辐射的方法及装置
CN103064259A (zh) * 2012-12-10 2013-04-24 华中科技大学 一种极紫外激光等离子体光源碎屑的隔离方法及系统
CN103108481A (zh) * 2012-11-30 2013-05-15 中国科学院微电子研究所 一种集光系统防污染保护装置
CN105981482A (zh) * 2013-12-02 2016-09-28 Asml荷兰有限公司 激光产生等离子体euv光源中的源材料输送的设备和方法
TWI569689B (zh) * 2015-04-30 2017-02-01 台灣積體電路製造股份有限公司 極紫外光射線源模組、極紫外光微影系統以及極紫外光微影製程方法
CN109581819A (zh) * 2017-09-28 2019-04-05 台湾积体电路制造股份有限公司 放射源设备
CN114265285A (zh) * 2020-09-16 2022-04-01 极光先进雷射株式会社 极紫外光生成装置和电子器件的制造方法

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5732392B2 (ja) 2008-08-14 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． 放射源およびリソグラフィ装置
EP2414898A1 (en) * 2009-04-02 2012-02-08 ETH Zurich Extreme ultraviolet light source with a debris-mitigated and cooled collector optics
JP2013522889A (ja) 2010-03-18 2013-06-13 イーティーエイチ・チューリッヒ 極紫外線を集める光学コレクタ、そのような光学コレクタを動作させる方法、及びそのようなコレクタを備えるｅｕｖ源
WO2011116898A1 (en) 2010-03-25 2011-09-29 Eth Zurich Steering device for controlling the direction and/or velocity of droplets of a target material and extreme euv source with such a steering device
US20130134318A1 (en) 2010-03-25 2013-05-30 Reza Abhari Beam line for a source of extreme ultraviolet (euv) radiation
KR101819053B1 (ko) 2010-04-22 2018-01-16 에이에스엠엘 네델란즈 비.브이. 극자외 방사선을 생성하는 컬렉터 거울 조립체 및 방법
DE102011086565A1 (de) * 2011-11-17 2012-11-15 Carl Zeiss Smt Gmbh Kollektor
US9453801B2 (en) 2012-05-25 2016-09-27 Kla-Tencor Corporation Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems
US9662688B2 (en) 2012-07-09 2017-05-30 Kla-Tencor Corporation Apparatus and method for cross-flow purge for optical components in a chamber
WO2014090480A1 (en) * 2012-12-12 2014-06-19 Asml Netherlands B.V. Power source for a lithographic apparatus, and lithographic apparatus comprising such a power source
WO2015086232A1 (en) * 2013-12-09 2015-06-18 Asml Netherlands B.V. Radiation source device, lithographic apparatus and device manufacturing method
US10101664B2 (en) 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US10034362B2 (en) 2014-12-16 2018-07-24 Kla-Tencor Corporation Plasma-based light source
US9541840B2 (en) 2014-12-18 2017-01-10 Asml Netherlands B.V. Faceted EUV optical element
WO2017077641A1 (ja) * 2015-11-06 2017-05-11 ギガフォトン株式会社 極端紫外光生成装置
JP7311296B2 (ja) 2019-04-01 2023-07-19 ギガフォトン株式会社 Ｅｕｖチャンバ装置、極端紫外光生成システム、及び電子デバイスの製造方法
US11635700B2 (en) * 2021-02-17 2023-04-25 Kla Corporation Method and apparatus for EUV mask inspection

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020070353A1 (en) * 2000-10-20 2002-06-13 Martin Richardson EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
CN1497349A (zh) * 2002-09-19 2004-05-19 Asml 辐射源、光刻装置和器件的制造方法
US20060186356A1 (en) * 2004-09-09 2006-08-24 Yousuke Imai Extreme ultra violet light source device
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
US20070023705A1 (en) * 2005-06-27 2007-02-01 Cymer, Inc. EUV light source collector lifetime improvements
US20070069159A1 (en) * 2005-09-23 2007-03-29 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
US20070158597A1 (en) * 2004-03-10 2007-07-12 Fomenkov Igor V EUV light source

Family Cites Families (8)

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JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
DE102005015274B4 (de) * 2005-03-31 2012-02-23 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung kurzwelliger Strahlung
JP4710463B2 (ja) * 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
JP2007134166A (ja) * 2005-11-10 2007-05-31 Ushio Inc 極端紫外光光源装置
US7372049B2 (en) * 2005-12-02 2008-05-13 Asml Netherlands B.V. Lithographic apparatus including a cleaning device and method for cleaning an optical element
US7504643B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
JP5108367B2 (ja) * 2007-04-27 2012-12-26 ギガフォトン株式会社 極端紫外光源装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020070353A1 (en) * 2000-10-20 2002-06-13 Martin Richardson EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
CN1497349A (zh) * 2002-09-19 2004-05-19 Asml 辐射源、光刻装置和器件的制造方法
US20070158597A1 (en) * 2004-03-10 2007-07-12 Fomenkov Igor V EUV light source
US20060186356A1 (en) * 2004-09-09 2006-08-24 Yousuke Imai Extreme ultra violet light source device
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
US20070023705A1 (en) * 2005-06-27 2007-02-01 Cymer, Inc. EUV light source collector lifetime improvements
US20070069159A1 (en) * 2005-09-23 2007-03-29 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231935A (zh) * 2011-05-31 2011-11-02 长春理工大学 一种产生相干极紫外辐射的方法及装置
CN103108481A (zh) * 2012-11-30 2013-05-15 中国科学院微电子研究所 一种集光系统防污染保护装置
CN103064259A (zh) * 2012-12-10 2013-04-24 华中科技大学 一种极紫外激光等离子体光源碎屑的隔离方法及系统
CN103064259B (zh) * 2012-12-10 2014-11-12 华中科技大学 一种极紫外激光等离子体光源碎屑的隔离方法及系统
CN110062515A (zh) * 2013-12-02 2019-07-26 Asml荷兰有限公司 激光产生等离子体euv光源中的源材料输送的设备和方法
CN105981482B (zh) * 2013-12-02 2019-04-12 Asml荷兰有限公司 激光产生等离子体euv光源中的源材料输送的设备和方法
CN105981482A (zh) * 2013-12-02 2016-09-28 Asml荷兰有限公司 激光产生等离子体euv光源中的源材料输送的设备和方法
CN110062515B (zh) * 2013-12-02 2023-11-28 Asml荷兰有限公司 激光产生等离子体euv光源中的源材料输送的设备和方法
TWI569689B (zh) * 2015-04-30 2017-02-01 台灣積體電路製造股份有限公司 極紫外光射線源模組、極紫外光微影系統以及極紫外光微影製程方法
US9625824B2 (en) 2015-04-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd Extreme ultraviolet lithography collector contamination reduction
CN109581819A (zh) * 2017-09-28 2019-04-05 台湾积体电路制造股份有限公司 放射源设备
US11531278B2 (en) 2017-09-28 2022-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system and method for decreasing debris in EUV lithography system
CN109581819B (zh) * 2017-09-28 2024-03-22 台湾积体电路制造股份有限公司 放射源设备
CN114265285A (zh) * 2020-09-16 2022-04-01 极光先进雷射株式会社 极紫外光生成装置和电子器件的制造方法

Also Published As

Publication number Publication date
WO2009025557A1 (en) 2009-02-26
JP5191541B2 (ja) 2013-05-08
KR20100063082A (ko) 2010-06-10
JP2010537424A (ja) 2010-12-02
KR101495208B1 (ko) 2015-02-25

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Application publication date: 20100721

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