CN101785369A - Module and method for producing extreme ultraviolet radiation - Google Patents
Module and method for producing extreme ultraviolet radiation Download PDFInfo
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- CN101785369A CN101785369A CN200880103760A CN200880103760A CN101785369A CN 101785369 A CN101785369 A CN 101785369A CN 200880103760 A CN200880103760 A CN 200880103760A CN 200880103760 A CN200880103760 A CN 200880103760A CN 101785369 A CN101785369 A CN 101785369A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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Abstract
A module (1) for producing extreme ultraviolet radiation includes a supply configured to supply droplets of an ignition material to a predetermined target ignition position and a laser (6) arranged to be focused on the predetermined target ignition position and to produce a plasma by hitting such a droplet (4) which is located at the predetermined target ignition position in order to change the droplet into an extreme ultraviolet producing plasma. Also, the module includes a collector mirror (12) having a mirror surface (14) constructed and arranged to reflect the radiation in order to focus the radiation on a focal point (FP). A fluid supply (2) is constructed and arranged to form a gas flow (GF) flowing away from the mirror surface in a direction transverse with respect to the mirror surface in order to mitigate particle debris produced by the plasma.
Description
Technical field
The present invention relates to be used to produce the module and the method for extreme ultraviolet radiation.Described module and method can be used for lithographic equipment and device making method.
Background technology
Lithographic equipment is a kind of required pattern to be applied on the substrate, normally the machine on the target of the substrate part.For example, lithographic equipment can be used in the manufacturing of integrated circuit (IC).In this case, the pattern that is called mask or mask alternatively can be formed device and be used to be created on circuit pattern to be formed on the individual layer of described IC.This design transfer can be arrived on the target part (for example, comprising a part of tube core, one or more tube core) on the substrate (for example, silicon wafer).Usually, the transfer of pattern is to be undertaken by pattern being imaged onto on radiation-sensitive materials (resist) layer that is provided on the substrate.Usually, independent substrate will comprise the adjacent target network partly that is formed pattern continuously.Known lithographic equipment comprises: so-called stepper, in described stepper, by exposing an entire pattern onto described target each the target part of radiation of partly coming up; And so-called scanner, in described scanner, scan described pattern, come each target part of radiation along the described substrate of parallel or antiparallel scanning direction with this direction simultaneously along assigned direction (" scanning " direction) by radiation beam.Also can be to transfer on the substrate by pattern impression (imprinting) is formed device with pattern from pattern to the mode on the substrate.
For ever-reduced structure being projected on the substrate, proposed to use the extreme ultraviolet radiation of wavelength in the 10-20nm scope, preferably wavelength is in the 13-14nm scope.
In order to produce such radiation, by with laser focusing to drop, can produce plasma, thereby drop (being preferably borne tin droplets) is transformed into the plasma that is used to produce extreme ultraviolet radiation.Usually, so-called collection speculum can be used for radiation is focused on focus.
Except extreme ultraviolet radiation, plasma produces into the fragment of particle form usually, for example thermalization atom, ion, neutron, nanocluster and/or microparticle.Fragment may cause damage to collecting speculum and other lithographic equipment.In order to prevent that fragment from causing damage, buffer gas can be used for the near zone of plasma, be used to slow down fragment.In addition, have been found that the collection speculum can deterioration and deformation when producing extreme ultraviolet radiation.
Summary of the invention
Distortion and deterioration that expectation prevents to collect speculum.
According to an aspect of the present invention, provide a kind of module that is used to produce extreme ultraviolet radiation, this module comprises: supply with, one or more drop that this supply is configured to ignition-material supplies on the predetermined target ignition position; Laser, this laser are arranged to focus on that predeterminated target is lighted on the position and to produce plasma by the bump drop when being positioned at predeterminated target at drop and lighting the position, are used for drop is become the plasma that extreme ultraviolet produces; Collect speculum, this collection speculum has mirror surface, and this mirror surface is configured and arranges with reflected radiation, is used for radiation is focused on focus; Supply with fluid, this fluid is supplied with to be configured on transverse to the direction of mirror surface and is formed the air-flow that flows away from mirror surface, is used to alleviate the granular debris by plasma generation.
According to a further aspect in the invention, such module can be included in the lithographic projection apparatus, and this lithographic projection apparatus is arranged so that pattern is formed device from pattern and projects on the substrate, and particularly in such equipment, comprise: irradiation system, this irradiation system is configured to the adjusting radiation beam; Strutting piece, this strutting piece are configured to support pattern and form device, and described pattern forms device can give radiation beam with pattern on the cross section of radiation beam, to form patterned beam of radiation; Be configured the substrate table that keeps substrate; And optical projection system, this optical projection system is configured to patterned beam of radiation is projected on the target part of substrate.
According to a further aspect in the invention, a kind of method that is used to produce extreme ultraviolet radiation is provided, wherein radiation beam for example laser beam be focused on the drop of ignition-material, drop is positioned at and is used on the predetermined target ignition position drop is become the plasma that extreme ultraviolet radiation produces; Use has the collection mirror reflects radiation of mirror surface, is used for radiation is focused on focus; With the air-flow that flows away from mirror surface is provided on the direction transverse to mirror surface, be used to alleviate granular debris by plasma generation.
According to an aspect of the present invention, provide a kind of module that is used to produce extreme ultraviolet radiation, having comprised: fuel supply, it is configured to the position that ignition-material is supplied to the expectation of the axis in the close chamber; Be configured to the radiation source of output radiation bundle, radiation beam is directed to the position of expectation, so that the point of irradiation combustible material, is configured to the plasma of emitter ultra-violet radiation with formation; Collect speculum, this collection speculum comprises the mirror surface that is positioned in the chamber, and mirror surface is configured and arranges extreme ultraviolet radiation is reflected and focus on the focus of locating near axis; Supply with fluid, this fluid is supplied with the direction that is configured to along axis and is supplied with air-flow, to alleviate the granular debris by plasma generation.
Description of drawings
Only by the mode of example, with reference to schematic figures embodiments of the invention are described below, wherein corresponding reference marker is represented corresponding parts in the schematic figures, in the accompanying drawings:
Fig. 1 illustrates lithographic equipment according to an embodiment of the invention;
Fig. 2 illustrates the schematic diagram according to the embodiment of module of the present invention;
Fig. 3 is the front view according to the gatherer of another embodiment of module of the present invention;
Fig. 4 is the end view of the gatherer among Fig. 3; With
Fig. 5 is the also end view of an embodiment according to module of the present invention;
Fig. 6 and 7 is the another embodiment according to module of the present invention;
Fig. 8 is the radiator of the module among Fig. 6; With
Fig. 9 is the radiator of the module among Fig. 7.
Embodiment
Fig. 1 schematically shows lithographic equipment according to an embodiment of the invention.Described lithographic equipment comprises: irradiation system (irradiator) IL, and its configuration is used to regulate radiation beam B (for example, extreme ultraviolet (EUV) radiation); Supporting construction or strutting piece (for example mask platform) MT, it is configured to support pattern and forms device (for example mask) MA, and is used for accurately locating the first positioner PM that pattern forms device according to the parameter of determining with configuration and links to each other; Substrate table (for example wafer station) WT, it is configured to keep substrate (for example being coated with the wafer of resist) W, and with configuration be used for according to the parameter of determining accurately the second positioner PW of position substrate W link to each other; And optical projection system (for example refraction type projection lens system) PS, its configuration is used for giving the target portion C of the graphic pattern projection of radiation beam B to substrate W (for example comprising one or more tube core) with formed device MA by pattern.
Irradiation system can comprise various types of opticses, and for example optics of refractive, reflection-type, magnetic type, electromagnetic type, electrostatic or other type or its combination in any are with guiding, be shaped or the control radiation.
Described supporting construction is with the design of the direction that depends on pattern and form device, lithographic equipment and form the mode whether device remain on medium other condition of vacuum environment such as pattern and keep pattern to form device.Described supporting construction can adopt machinery, vacuum, static or other clamping technology keeps pattern to form device.Described supporting construction can be framework or platform, and for example, it can become fixing or movably as required.Described supporting construction can guarantee that pattern forms device and is positioned at (for example with respect to optical projection system) on the desired position.The term of any use here " mask " or " mask " can be thought and more upper term " pattern formation device " synonym.
Here employed term " pattern formation device " should be broadly interpreted as to represent can be used in is giving radiation beam on the cross section of radiation beam so that form any device of pattern on the target part at substrate with pattern.Should be noted that the pattern that is endowed radiation beam may be not conform to (if for example this pattern comprises phase shift feature or so-called supplemental characteristic) fully with required pattern on the target part of substrate.Usually, the pattern that is endowed radiation beam will be corresponding with the specific functional layer in the device that forms on the target part, for example integrated circuit.
It can be transmission-type or reflective that pattern forms device.The example that pattern forms device comprises mask, array of programmable mirrors and liquid crystal display able to programme (LCD) panel.Mask is known in photolithography, and comprises the mask-type such as binary mask type, alternate type phase shifting mask type, attenuation type phase shifting mask type and various hybrid mask types.The example of array of programmable mirrors adopts the matrix arrangements of small reflector, and each small reflector can tilt independently, so that reflect the radiation beam of incident along different directions.The described speculum that has tilted gives pattern by described speculum matrix radiation reflected bundle.
Term used herein " optical projection system " should broadly be interpreted as comprising the optical projection system of any type, comprise refractive, reflection-type, reflection-refraction type, magnetic type, electromagnetic type and electrostatic optical systems or its combination in any, as for employed exposing radiation was fit to or for such as use immersion liquid or use the vacuum other factors was fit to.Term used herein " projecting lens " can be thought and more upper term " optical projection system " synonym.
As shown here, described equipment is reflection-type (for example, adopting reflection type mask).Alternatively, described equipment can be transmission-type (for example, adopting transmissive mask).
Described lithographic equipment can be the type with two (two platforms) or more substrate tables (and/or two or more mask platform).In this " many " machine, can use additional platform concurrently, or can on one or more platform, carry out in the preliminary step, be used for exposure with one or more other.
Lithographic equipment is this type also, and wherein at least a portion of substrate is covered by high refractive index liquid (for example, water) relatively, so that fill the space between optical projection system and the substrate.Immersion liquid also can be applied to other space of lithographic equipment, for example between mask and optical projection system.The numerical aperture that immersion technique is used to improve optical projection system is being known in the art.Employed herein term " submergence " is not meant that structure (for example substrate) must be immersed in the liquid, but only refer to liquid between exposure period between optical projection system and substrate.
With reference to Fig. 1, described irradiator IL receives the radiation beam that sends from radiation source S O.This source and described lithographic equipment can be discrete entities (for example when this source is excimer laser).In this case, this source can be considered to a part that forms lithographic equipment, and the help of the bundle transmission system BD (not showing in Fig. 1) by comprising for example suitable directional mirror and/or beam expander is passed to described irradiator IL with described radiation beam from described source SO.In other cases, described source can be the part (for example when described source is mercury lamp) of described lithographic equipment.The described bundle transmission system BD of can be with described source SO and described irradiator IL and being provided with if desired the time is called radiating system together.
Described irradiator IL can comprise that configuration is used for adjusting the adjuster AD (not showing at Fig. 1) of the angle intensity distributions of described radiation beam.Usually, can adjust the described at least outside and/or the inner radial scope (generally being called σ-outside and σ-inside) of the intensity distributions in the pupil plane of described irradiator IL.In addition, described irradiator IL can comprise various other parts, for example integrator IN (not showing in Fig. 1) and concentrator CO (not showing in Fig. 1).Described irradiator can be used to regulate described radiation beam, in its cross section, to have required uniformity and intensity distributions.
Described radiation beam B incides the described pattern that remains on the supporting construction (for example, mask table MT) and forms on the device (for example, mask MA), and forms pattern by described pattern formation device MA.After being formed device (for example mask) MA reflection by pattern, described radiation beam B is by optical projection system PS, and described optical projection system PS focuses on radiation beam on the target portion C of described substrate W.By the second positioner PW and position transducer IF2 (for example, interferometric device, linear encoder or capacitance sensor) help, can accurately move described substrate table WT, for example so that different target portion C is positioned in the path of described radiation beam B.Similarly, for example after the machinery from the mask storehouse obtains, or in scan period, the described first positioner PM and another position transducer IF1 can be used for accurately locating pattern with respect to the path of described radiation beam B and form device (for example mask) MA.The long stroke module (coarse positioning) of a part that usually, can be by forming the described first positioner PM and the help of short stroke module (fine positioning) realize that supporting construction (for example mask platform) MT's is mobile.Similarly, can adopt the long stroke module of a part that forms the described second positioner PW and short stroke module to realize moving of described substrate table WT.Under the situation of stepper (opposite with scanner), supporting construction (for example mask platform) MT can only link to each other with short-stroke actuator, perhaps can fix.Can use mask alignment mark M1, M2 and substrate alignment mark P1, P2 to come aligned pattern to form device (for example mask) MA and substrate W.Although shown substrate alignment mark has occupied the application-specific target part, they can be in the space between the target part (these be known as the line alignment mark).Similarly, under the situation that will be arranged on more than one tube core on pattern formation device (for example mask) MA, described mask alignment mark can be between described tube core.
Shown equipment can be used in following pattern at least a:
1. in step mode, supporting construction (for example mask platform) MT and substrate table WT are remained static substantially in, the whole pattern of giving described radiation beam is once projected on the target portion C (that is, single static exposure).Then, described substrate table WT is moved along X and/or Y direction, make and to expose to the different target portion C.In step mode, the full-size of exposure field has limited the size of the described target portion C of imaging in single static exposure.
2. in scan pattern, when supporting construction (for example mask platform) MT and substrate table WT are synchronously scanned, with the graphic pattern projection of giving described radiation beam on the target portion C (that is, single dynamic exposure).Substrate table WT can determine by (dwindling) magnification ratio and the image inversion characteristic of described optical projection system PS with respect to speed and the direction of supporting construction (for example mask platform) MT.In scan pattern, the full-size of exposure field has limited the width (along non-scanning direction) of the part of target described in the single dynamic exposure, and the length of described scanning motion has been determined the height (along described scanning direction) of described target part.
3. in another pattern, remain supporting construction (for example mask platform) MT that keeps pattern able to programme to form device static substantially, and when described substrate table WT is moved or scans, will give the graphic pattern projection of described radiation beam on the target portion C.In this pattern, adopt impulse radiation source usually, and after the moving each time of described substrate table WT or between the continuous radiation pulse in scan period, upgrade described pattern able to programme as required and form device.This operator scheme can be easy to be applied to utilize pattern able to programme to form in the maskless lithography art of device (for example, the array of programmable mirrors of type) as mentioned above.
Also can adopt the combination and/or the variant of above-mentioned use pattern, or diverse use pattern.
Fig. 2 demonstrates the schematic diagram that is configured to the module 1 that produces extreme ultraviolet radiation according to an embodiment of the invention.Module 1 can be suitable as source SO and radiation beam is provided for irradiator IL.Module 1 comprises supply (for example fluid supply) device 2, and its one or more drop 4 that is configured to ignition-material supplies to predetermined target ignition position TIP.In addition, for example the radiation source 6 of laser or lasing light emitter is comprised in the module 1, laser 6 is arranged with generation and is focused bundle on the predetermined target ignition position TIP, so that the drop 4 that is arranged on predetermined target ignition position TIP place by bump produces the plasma 8 that is used to produce extreme ultraviolet.In one embodiment, drop may be set at the position near the axis in chamber.Module 1 also comprises: comprise the chamber 10 of collecting speculum 12, this collection speculum 12 comprises the mirror surface 14 that is configured and is arranged with reflected radiation, so that radiation is focused on the focal point F P; With fluid supply apparatus 16, the direction D that described fluid supply apparatus 16 is configured to be formed on transverse to mirror surface 14 goes up the air-flow GF that flows away from mirror surface 14, so that slow down the granular debris by plasma generation.
Preferably by using pendant Klatt (Peclet) effect to realize slowing down of granular debris.So-called Peclet number is described convection current ratio and its diffusion (normally thermal diffusion) ratio that flows.Under the thermal diffusion situation, it equals the product of Reynolds (Reynold) number and Prandtl (Prandtl) number, and under the situation of mass diffusion, it equals the product of Reynolds number and Schmidt (Schmidt) number.Convection current is sufficiently high flows by producing, and it is very high that Peclet number will become, and makes that arriving the granular debris of collecting speculum will enough lack.The speed that is fit to that is used for air-flow can be found to be the speed greater than about 5m/s.With the speed of about 5m/s and Geng Gao, for example SnH
4Hydride can be transmitted away from collecting mirror surface 14.Typically, the speed of air-flow can be 100m/s.
In an embodiment, focus can be positioned at the position near axis.This axis can be an optical axis.Air-flow GF can supply with by hole 18 during waiting stripped generation continuously.
Because distortion and deterioration that near the heat load of the static buffer gas more or less in the target ignition position will cause collecting speculum, so form air-flow when the module of describing 1 is in the operation in Fig. 2, air-flow GF flows away from mirror surface 14, thereby has reduced the gas among the air-flow GF and the amount of the thermo-contact between the mirror surface 14.
One or more hole 18 as fluid supply apparatus 16 can be arranged in the speculum 12, and each hole is configured to and allows at least a portion of air-flow GF to pass through.Preferably, one or more hole 20 can be arranged in the laser 6, pass through with at least a portion that allows air-flow GF.In another embodiment, air-flow GF is fed in the chamber 10 of a plurality of fluid supply apparatus (or fluid feed unit) 22 that have in module of being disposed in 1.Each fluid supply apparatus 22 is arranged so that the son stream (subflow) of gas to be provided, and each son stream is by towards the central area guiding, and making provides air-flow away from mirror surface by the collision between the son stream that occurs in the central area.
Be comprised in situation in the lithographic projection apparatus (for example equipment that shows among Fig. 1) in module, pump 24 can be used for preventing that air-flow GF from flowing into the other parts of equipment, for example arrives irradiation system IL.
As previously mentioned, air-flow can comprise molecular state and/or atom state hydrogen or any other gas that is fit to.Can come supply gas by the fluid supply apparatus 16 of supply gas.Fluid supply apparatus can also feed fluid, and described liquid is transformed into gas phase in entering chamber 10 time.
With reference to figure 3, the alternate embodiment of the embodiment of Fig. 2 is disclosed.The embodiment of Fig. 3 is similar to the embodiment of Fig. 2.Difference is that in the embodiments of figure 3, fluid is supplied with 2 and comprised locational one or more manifold 26 that is arranged near the mirror surface 14 of collecting speculum 12.Manifold 26 is configured to by a plurality of holes 18 and supplies with air-flow.By adopting manifold 26, eliminated the needs that the hole is provided in collecting speculum 12, described manifold 26 can be and collect speculum 12 separated structures.This has increased the manufacturability according to module of the present invention significantly.
In the embodiments of figure 3, manifold 26 is positioned in the chamber 10, makes hole 18 light location guide gas towards the plasma target.
Fig. 4 is the end view of the collection speculum 12 of Fig. 3.Yet in Fig. 4, lasing light emitter 6 is shown and extends through hole 28 (also can referring to Fig. 3).
Fig. 5 is the also end view of an embodiment of module.The embodiment of Fig. 5 is very similar to the embodiment of Fig. 2.Yet in Fig. 5, module 1 additionally comprises gas gathering system 30, and described gas gathering system 30 is configured to collect and comprises the air-flow of described at least a portion from least a portion in the particle of granular debris.As Fig. 5 finding, gas gathering system is configured in the position with respect to target ignition position and fluid supply apparatus opposite and collects air-flow.Fluid supply apparatus 16 and gas gathering system are arranged the speed that makes air-flow can reach about 100m/s or any other the flow velocity in the scope of 10m/s to 1000m/s.
As can be seen, the air-flow of being supplied with by fluid supply apparatus 16 in Fig. 5 is the jet that is rather narrow.The use of gas gathering system 30 can be respectively combines with the type in hole 16 of embodiment in Fig. 2 and 3.By this way, can obtain more homogeneous and broader air-flow, air-flow as a setting.
Fig. 6 and 7 discloses an also module 101 that is used to produce extreme ultraviolet (EUV) radiation.This module comprises the extreme ultraviolet radiation emission source, and described source is provided with the feedway that the fluid of ignition-material is supplied to predetermined target ignition position TIP.Though for reason does not clearly demonstrate in Fig. 6 and 7, described feedway can be identical or similar with it at least with the feedway 2 that demonstrates among Fig. 2.
Described source also can be provided with target and light mechanism 106, is laser among each embodiment in Fig. 6 and 7, and it is configured and arranges to light the position in target and produces plasma from ignition-material, described plasma emission EUV radiation.In this case, described source is plasma (LPP) source of induced with laser and extends through hole in the collection speculum 112 with mirror surface 114.Such source of another type is plasma (DPP) source of discharge generation.
Gatherer 112 is comprised in the module 101, and be configured and arrange will focus on focal point F P by the radiation of plasma emission, radiator 132 has transfer of heat energy surface 134, and this surface 134 is configured and arranges so that heat energy wide ignition position TIP is shifted.Advantageously, radiator 132 can be arranged on the position near the target ignition position, shown in Fig. 6 and 7.
In the embodiment of Fig. 6 and 7, described module comprises chamber (not demonstrating its integral body in the accompanying drawings), and source, collection speculum 112 and radiator 132 are arranged in the described chamber.Described chamber can comprise molecule state hydrogen, hydrogen root or their mixture.
In two embodiment of Fig. 6 and 7, radiator 132 is positioned in the section, described section avoids being directed to by collection speculum 112 radiation of focal point F P, and this is the reflection of avoiding the mirror surface 114 of speculum 112 because this section is collected non-reflectivity part 136 shieldings in the speculum.This part 136 of collecting speculum lacks reflectivity, is to light the position that mechanism 106 (being laser) extends through collection speculum 112 places because it is in target.Therefore, radiator 132 does not stop by any EUV radiation of collecting speculum 112 reflections, and therefore the EUV radiation intensity at focusing FP place can not produce deleterious effects.
Though being described in detail in detail in this article, lithographic equipment is used in manufacturing IC (integrated circuit), but should be understood that lithographic equipment described here can have other application, for example make the guiding of integrated optics system, magnetic domain memory and check pattern, flat-panel monitor, LCD (LCD), film magnetic head etc.One skilled in the art would recognize that in the situation of this alternate application, any term " wafer " or " tube core " that use can be thought respectively and more upper term " substrate " or " target part " synonym herein.Here the substrate of indication can be handled before or after exposure, for example in track (a kind ofly typically resist layer is coated onto on the substrate, and the instrument that the resist that has exposed is developed), measuring tool and/or the instruments of inspection.Under applicable situation, described disclosure can be applied in this and other substrate processing instrument.In addition, more than described substrate can be handled once, for example, make described term used herein " substrate " also can represent to have comprised the substrate of a plurality of processing layers for producing multilayer IC.
Though below made concrete reference, in the situation of optical lithography, use embodiments of the invention, it should be understood that the present invention can have other application, for example imprint lithography, and the situation of needing only allows, and is not limited to optical lithography.In imprint lithography, the topology that pattern forms in the device defines the pattern that produces on substrate.The topology that described pattern can be formed device is printed onto in the resist layer that offers described substrate, makes up described resist is solidified by applying electromagnetic radiation, heat, pressure or its thereon.After described resist solidified, described pattern formed device and removes from described resist, and stays pattern in resist.
Term used herein " radiation " and " bundle " comprise the electromagnetic radiation of all types, comprise: ultraviolet (UV) radiation (for example have about 365,355,248,193,157 or the wavelength of 126nm) and extreme ultraviolet (EUV) radiation (for example, have in the 5-20nm scope wavelength) and the particle beams (for example ion beam or electron beam).
Under situation about allowing, term " lens " can refer to any one or the combination in the dissimilar opticses, comprises refraction type, reflective, magnetic, electromagnetic type and electrostatic optics.
Although below described certain embodiments of the present invention, it should be understood that the present invention can be to realize with above-mentioned different form.For example, the present invention can take to comprise the form of the computer program of one or more sequence of machine-readable instruction that is used to describe above-mentioned disclosed method, perhaps take to have the form (for example, semiconductor memory, disk or CD) of the data storage medium of this computer program of storage therein.
More than describe and be intended to make an explanation, rather than restrictive.Thereby, one with ordinary skill in the art would appreciate that under the prerequisite of the protection range that does not depart from following claim and can make amendment described invention.
Claims (35)
1. method that is used to produce extreme ultraviolet radiation, described method comprises step:
With radiation beam, for example laser beam is directed on the drop of ignition-material, and described drop is positioned at predeterminated target to be lighted on the position, is configured to the plasma that produces extreme ultraviolet radiation so that drop become;
Use comprises that the collection speculum of mirror surface reflects described radiation so that described radiation is focused on the focus; With
Air-flow is provided, and described air-flow flows being substantially transverse on the direction of described mirror surface away from described mirror surface, to slow down the granular debris by described plasma generation.
2. method according to claim 1, wherein said air-flow comprises molecule state hydrogen and/or atom state hydrogen.
3. method according to claim 1 and 2, wherein said target ignition position and described speculum are arranged in a chamber.
4. method according to claim 3, wherein the air pressure in described chamber is maintained at about between 10Pa and the 400Pa.
5. method according to claim 4, wherein said air pressure is between about 20Pa and 200Pa.
6. according to each the described method in the aforementioned claim, wherein, described speculum comprises one or more hole, and each described hole is configured to and allows at least a portion of described air-flow to pass through.
7. according to each the described method in the aforementioned claim, wherein, the laser of outgoing laser beam is provided with one or more hole, and each described hole is configured to and allows at least a portion of described air-flow to pass through.
8. according to each the described method in the aforementioned claim, wherein, a plurality of son streams of gas are provided, in the described son stream each is by towards the central area guiding, and making provides air-flow away from described mirror surface by the collision between the described son stream that appears in the described central area.
9. according to each the described method in the aforementioned claim, wherein, mobile described air-flow away from described mirror surface is provided by one or more manifold of arranging in the position of close described collection speculum.
10. method according to claim 9 is collected comprising the described air-flow from least a portion of the described particle of described granular debris.
11. method according to claim 10, wherein, collected in the position relative with described mirror surface with respect to described target ignition position described comprising from the air-flow of described at least a portion of the particle of described granular debris.
12. a module that is used to produce extreme ultraviolet radiation, described module comprises:
Feedway, described feedway are configured to one or more drop with ignition-material and supply to predeterminated target and light on the position;
Radiation source, described radiation source is configured to the supply laser beam, described laser beam is arranged to be focused that predeterminated target is lighted on the position and to be positioned at described predeterminated target by bump and lights the drop of position and produce plasma, so that described drop become the plasma that is used to produce extreme ultraviolet;
Collect speculum, described collection speculum comprises mirror surface, and described mirror surface is configured and arranges to reflect described radiation, is used for described radiation is focused on the focus place; With
Fluid supply apparatus, described fluid supply apparatus is configured to form air-flow, and described air-flow flows being substantially transverse on the direction of described mirror surface away from described mirror surface, to slow down the granular debris by described plasma generation.
13. module according to claim 12, wherein, described gas comprises molecule state hydrogen and/or atom state hydrogen.
14. according to claim 12 or 13 described modules, wherein, described module comprises a chamber, described target ignition position and described speculum are arranged in described chamber.
15. module according to claim 14, wherein, described module comprises one or more pump that is arranged with gas bleeding from described chamber.
16. according to claim 14 or 15 described modules, wherein, described module is provided with pressure controller, described pressure controller is configured to the gas pressure in the described chamber is maintained at about between 10Pa and the 400Pa.
17. module according to claim 16, wherein, described gas pressure 20 and 200Pa between.
18. according to each described module among the claim 14-17, wherein, described module comprises: one or more pump is arranged with gas bleeding from described chamber; And pressure controller, be arranged to control described one or more pump, so that the gas pressure in the described chamber is maintained at about between 10Pa and the 400Pa.
19. module according to claim 18, wherein said gas pressure is between about 20Pa and 200Pa.
20. according to each described module among the claim 12-19, wherein, described speculum comprises one or more hole, each described hole is configured to and allows at least a portion of described air-flow to pass through.
21. according to each described module among the claim 12-20, wherein, described lasing light emitter is provided with one or more hole, each described hole is configured to and allows at least a portion of described air-flow to pass through.
22. according to each described module among the claim 12-21, wherein, described module comprises a plurality of fluid supply apparatus, each described fluid supply apparatus is arranged so that the son stream of gas to be provided, and each in the described son stream is by towards the central area guiding, and making provides air-flow away from described mirror surface by the collision between the described son stream that appears in the described central area.
23. a module that is used to produce extreme ultraviolet radiation, described module comprises:
Fuel supply system, described fuel supply system are configured to fire fuel are supplied on the position near the expectation of the axis in the chamber;
Radiation source, described radiation source is configured to the output radiation bundle, and described radiation beam is directed to the position of described expectation, so that the described ignition-material of radiation, is configured to the plasma of emitter ultra-violet radiation with formation;
Collect speculum, described collection speculum comprises the mirror surface that is positioned in the described chamber, and described mirror surface is configured and arranges described extreme ultraviolet radiation is reflected and focus on and is positioned near on the focus at described axis place; With
Fluid supply apparatus, described fluid supply apparatus are configured to roughly supply with air-flow along the direction of described axis, to slow down the granular debris by described plasma generation.
24. module according to claim 23, wherein, described air-flow is roughly parallel to described axis and flows.
25. according to claim 23 or 24 described modules, wherein, described air-flow is configured to away from described mirror surface and towards described focus and flows.
26. according to claim 23,24 or 25 described modules, wherein, described fluid supply apparatus comprises being configured to and produces the first fluid feed unit and the second fluid feed unit that the first son stream and second son flow respectively, the described first son stream and the second son stream quilt are towards the central area guiding near the described mirror surface of described axis, to form described air-flow.
27. according to each described module among the claim 12-26, wherein, described fluid supply apparatus comprises one or more manifold, described manifold is disposed in the position near described collection speculum, and is configured to the described air-flow of supply.
28. according to each described module among the claim 12-27, wherein, described module comprises gas gathering system, and described gas gathering system is configured to collects the air-flow comprise from least a portion in described at least a portion of the particle of described granular debris.
29. module according to claim 28, wherein, described gas gathering system is configured to is collecting described air-flow with respect to the position on described target ignition position and described fluid supply apparatus opposite.
30. a lithographic projection apparatus, described lithographic projection apparatus are arranged so that pattern is formed device from pattern and project on the substrate, described lithographic equipment comprises:
Irradiation system, described irradiation system is configured to the adjusting radiation beam;
Strutting piece, described strutting piece are configured to keep pattern to form device, and described pattern forms device can give described radiation beam with pattern on the cross section of radiation beam, to form patterned beam of radiation;
Substrate table, described substrate table is configured to keep substrate;
Optical projection system, described optical projection system are configured to described patterned beam of radiation are projected on the target part of described substrate; With
According to each described module among the claim 12-29.
31. a method that is used to produce extreme ultraviolet radiation, described method comprises step:
With radiation beam radiant combustible material, be configured to the plasma of emitter ultra-violet radiation with formation;
The collection speculum that use comprises mirror surface is with described extreme ultraviolet radiation reflection and focus on the focus; With
Supply with away from described mirror surface airflow flowing, to slow down granular debris being substantially transverse on the direction of described mirror surface by described plasma generation.
33. a module that is used to produce extreme ultraviolet radiation, described module comprises:
The extreme ultraviolet radiation emission source, described source is provided with feedway and target is lighted mechanism, described feedway is configured to fluid with ignition-material and supplies to predeterminated target and light the position, described target is lighted mechanism and is configured and arranges to light the position in described target from described ignition-material generation plasma, the described extreme ultraviolet radiation of described plasma emission;
Collect speculum, described collection speculum is configured and arranges being focused on by the radiation of described plasma emission on the focus; With
Radiator, described radiator has the transfer of heat energy surface, and described transfer of heat energy surface is configured and arranges so that heat energy is shifted away from described target ignition position,
Wherein, described radiator is positioned at the position near described target ignition position.
34. module according to claim 33, described radiator are set in the section at least in part, described section avoids being guided to by described collection speculum the radiation of described focus.
35. module according to claim 34, wherein, the described section of avoiding radiation is partly limited with respect to the position of described target ignition position by the non-reflectivity part in the described collection speculum and the described non-reflectivity of described collection speculum.
36. according to claim 33,34 or 35 described modules, wherein said module comprises a chamber, described source, described gatherer and radiator are arranged in described chamber, and described chamber also comprises molecule state hydrogen and/or hydrogen root.
Applications Claiming Priority (9)
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| US93564307P | 2007-08-23 | 2007-08-23 | |
| US60/935,643 | 2007-08-23 | ||
| US12/078,663 | 2008-04-02 | ||
| US12/078,663 US7763871B2 (en) | 2008-04-02 | 2008-04-02 | Radiation source |
| US13614808P | 2008-08-14 | 2008-08-14 | |
| US13614508P | 2008-08-14 | 2008-08-14 | |
| US61/136,145 | 2008-08-14 | ||
| US61/136,148 | 2008-08-14 | ||
| PCT/NL2008/050567 WO2009025557A1 (en) | 2007-08-23 | 2008-08-25 | Module and method for producing extreme ultraviolet radiation |
Publications (1)
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| CN101785369A true CN101785369A (en) | 2010-07-21 |
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| CN200880103760A Pending CN101785369A (en) | 2007-08-23 | 2008-08-25 | Module and method for producing extreme ultraviolet radiation |
Country Status (4)
| Country | Link |
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| JP (1) | JP5191541B2 (en) |
| KR (1) | KR101495208B1 (en) |
| CN (1) | CN101785369A (en) |
| WO (1) | WO2009025557A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101495208B1 (en) | 2015-02-25 |
| WO2009025557A1 (en) | 2009-02-26 |
| KR20100063082A (en) | 2010-06-10 |
| JP5191541B2 (en) | 2013-05-08 |
| JP2010537424A (en) | 2010-12-02 |
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