JP5191541B2 - Module and method for generating extreme ultraviolet radiation and lithographic projection apparatus - Google Patents

Description

  The present invention relates to a module and method for generating extreme ultraviolet rays. This module and this method can be applied to lithographic apparatus and device manufacturing method.

  A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that case, a patterning device, also referred to as a mask or a reticle, may be used to generate a circuit pattern formed on an individual layer of the IC. This pattern can be transferred onto a target portion (eg including part of, one, or more dies) on a substrate (eg a silicon wafer). Usually, the pattern is transferred by imaging on a radiation-sensitive material (resist) layer provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers that irradiate each target portion by exposing the entire pattern onto the target portion at once, and simultaneously scanning the pattern in a certain direction (“scan” direction) with a radiation beam, A so-called scanner is included that irradiates each target portion by scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.

  [0003] In order to be able to project smaller structures onto a substrate, it has been proposed to use extreme ultraviolet radiation having a wavelength in the range of 10-20 nm, preferably in the range of 13-14 nm.

  [0004] To generate such radiation, the laser is focused on a droplet, thereby generating a plasma by converting the droplet, preferably a tin droplet, into a plasma that produces extreme ultraviolet radiation. May be. In many cases, so-called collector mirrors may be used to focus the radiation.

  [0005] In addition to extreme ultraviolet radiation, plasma typically produces debris in the form of particles such as heated atoms, ions, neutrons, nanoclusters, and / or particulates. Debris can damage the collector mirror and other optical components. In order to prevent debris from causing damage, a buffer gas may be used in the vicinity of the plasma to reduce the debris. Nevertheless, collector mirrors have been found to degrade and deform when extreme ultraviolet light is generated.

  [0006] It is desirable to prevent deformation and deterioration of the collector mirror.

[0007] In one aspect of the present invention, the supply configured to provide one or more droplets of an ignition material to a predetermined target ignition position, the focus is adjusted to the predetermined target ignition position, Jo Tokoro target combining a radiation source for supplying a laser beam to generate plasma Ru changing the droplets extreme ultraviolet generating plasma by colliding with the droplet that is disposed in the ignition position, the extreme ultraviolet to reflect extreme ultraviolet radiation to the focal And a collector mirror including a mirror surface configured to form a gas flow that flows away from the mirror surface in a direction substantially transverse to the mirror surface to reduce particle debris generated by the plasma. A module for generating extreme ultraviolet radiation is provided.
The gas may comprise molecular and / or atomic hydrogen. The module may include one or more pumps that deliver gas from the chamber, and / or the module may be provided with a pressure controller that maintains the gas pressure in the chamber between about 10 Pa and 400 Pa. The gas pressure may be between 20 Pa and 200 Pa. The module may include one or more pumps that deliver gas from the chamber and a pressure controller that controls the one or more pumps to maintain the gas pressure in the chamber between about 10 Pa and 400 Pa. The gas pressure may be between about 20 Pa and 200 Pa.
In another aspect of the present invention, a module for generating extreme ultraviolet radiation, a fuel supply source for supplying an igniting substance to a desired position close to an axis in the chamber, and a radiation source for outputting a radiation beam, A collector mirror comprising a radiation source and a mirror surface positioned within the chamber, wherein the radiation beam is directed to a desired location thereby forming a plasma that irradiates the ignition material and emits extreme ultraviolet radiation Reflects extreme ultraviolet light and focuses on a focal point positioned close to the axis, and provides a gas flow substantially along the direction of the axis to reduce particle debris generated by the plasma And a fluid source.
The gas flow may flow substantially parallel to the axis. The gas flow preferably flows away from the mirror surface and toward the focal point. The fluid source may include first and second fluid supply units that generate first and second substreams, respectively, wherein the first and second substreams are in the central region of the mirror surface proximate the axis Directed to form a gas stream. The fluid supply source may include one or more manifolds that are located proximate to the collector mirror and provide a gas flow. In an embodiment, the module includes a gas collection system that collects a gas stream that includes at least a portion of at least a portion of the particles from the particle debris. The gas collection system may collect the gas stream at a position opposite the fuel supply relative to the target ignition position.

[0008] In another aspect of the invention, such a module may be included in a lithographic projection apparatus configured to project a pattern from a patterning device onto a substrate, in particular in such an apparatus. An illumination system configured to condition a radiation beam and a support configured to hold a patterning device, wherein the patterning device imparts a pattern to a cross section of the radiation beam to form a patterned radiation beam A support, a substrate table configured to hold the substrate, and a projection system configured to project a patterned radiation beam onto a target portion of the substrate are included.
In another aspect of the invention, a method of generating extreme ultraviolet radiation, wherein a radiation beam, eg, a laser beam, is directed to a droplet of igniting material disposed at a predetermined target ignition location, and the droplet is directed to extreme ultraviolet radiation. To generate plasma, to reflect extreme ultraviolet rays using a collector mirror including a mirror surface to focus the extreme ultraviolet rays, and to move away from the mirror surface in a direction substantially transverse to the mirror surface. Providing a flowing gas stream to mitigate particle debris generated by the plasma.
The target ignition position and the mirror may be disposed in the chamber. The gas pressure in the chamber may be maintained between about 10 Pa and 400 Pa. The gas pressure may be between about 20 Pa and 200 Pa. Optionally, the mirror includes one or more apertures through which at least a portion of the gas stream can pass. Alternatively or additionally, the laser that outputs the laser beam may be provided with one or more apertures through which at least a portion of the gas stream can pass. A plurality of gas substreams may be provided, each of which is directed to the central region such that a gas flow away from the mirror surface is provided by a collision between the substreams occurring in the central region.

  [0009] In another aspect of the invention, a method for generating extreme ultraviolet radiation, wherein a beam of radiation, eg, a laser beam, is focused on a droplet of igniting material, the droplet is placed at a predetermined target ignition position, To change the droplet into extreme ultraviolet generation plasma, to reflect the extreme ultraviolet by using the collector mirror including the mirror surface to focus the extreme ultraviolet, and to move away from the mirror surface in the direction transverse to the mirror surface Providing a flowing gas stream to mitigate particle debris generated by the plasma.

[0010] In one aspect of the present invention, a fuel supply source configured to supply an ignition material to a desired position close to an axis in the chamber, and a radiation source configured to output a radiation beam. A collector including a radiation source and a mirror surface positioned within the chamber, wherein the radiation beam is directed to a desired location thereby forming a plasma configured to irradiate the igniting material and emit extreme ultraviolet radiation A mirror, wherein the mirror surface reflects the extreme ultraviolet light and is configured to focus on a focal point positioned close to the axis, and a gas flow along the direction of the axis to supply a plasma A module for generating extreme ultraviolet radiation is provided that includes a fluid source that mitigates the particle debris produced by.
In another aspect of the invention, a module for generating extreme ultraviolet radiation, which is an extreme ultraviolet radiation-emitting source, the emission source supplying a fluid of ignition material to a predetermined target ignition position, and target ignition A target ignition mechanism for generating a plasma from an igniting material at a position, wherein the plasma emits extreme ultraviolet radiation, an extreme ultraviolet radiation source, a collector mirror that focuses the radiation emitted by the plasma, and a target ignition position And a heat sink having a heat energy redirecting surface for diverting heat energy, wherein the heat sink is disposed in a position proximate to the target ignition location.
The position at which the heat sink is at least partially disposed may be in a region without radiation directed to the focal point by the collector mirror. The region without radiation is optionally defined by the non-reflecting part of the collector mirror and the position of the non-reflecting part of the collector mirror relative to the target ignition position. The module includes a chamber in which an extreme ultraviolet-emitting source, a collector, and a heat sink are disposed, and the chamber may further include hydrogen molecules and / or hydrogen radicals.

[0011] Some embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings. In these drawings, the same reference numerals indicate corresponding parts.
FIG. 1 depicts a lithographic apparatus according to one embodiment of the invention. [0013] FIG. 2 shows a schematic diagram of an embodiment of a module according to the invention. [0014] FIG. 3 is a front view of a collector of another embodiment of a module according to the present invention. FIG. 4 is a side view of the collector of FIG. FIG. 5 is a side view of yet another embodiment of a module according to the present invention. [0017] Figure 6 is a further embodiment of a module according to the present invention. [0017] Figure 7 is a further embodiment of a module according to the present invention. FIG. 8 is a heat sink of the module of FIG. FIG. 9 is a heat sink of the module of FIG.

  [0020] Figure 1 schematically depicts a lithographic apparatus according to one embodiment of the invention. The lithographic apparatus is configured to support an illumination system (illuminator) IL configured to condition a radiation beam B (eg EUV radiation) and a patterning device (eg mask) MA, and patterned according to certain parameters. A support structure or support (eg, a mask table) MT coupled to a first positioner PM configured to accurately position the device, and a substrate (eg, a resist-coated wafer) W; A substrate table (eg, a wafer table) WT coupled to a second positioner PW configured to accurately position the substrate according to the parameters, and a pattern imparted to the radiation beam B by the patterning device MA on a target portion C of the substrate W (For example, one And a configuration projection system (e.g. a refractive projection lens system) PS configured to project onto includes a die above).

  [0021] The illumination system may be a refractive, reflective, magnetic, electromagnetic, electrostatic, or other type of optical component, or any of them, to induce, shape, or control radiation Various types of optical components such as combinations can be included.

  [0022] The support structure holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as whether or not the patterning device is held in a vacuum environment. The support structure can hold the patterning device using mechanical, vacuum, electrostatic or other clamping techniques. The support structure may be, for example, a frame or table that can be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”

  [0023] As used herein, the term "patterning device" refers to any device that can be used to apply a pattern to a cross section of a radiation beam so as to create a pattern in a target portion of a substrate. Should be interpreted broadly. It should be noted that the pattern imparted to the radiation beam may not exactly match the desired pattern in the target portion of the substrate, for example if the pattern includes phase shift features or so-called assist features. . Typically, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.

  [0024] The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase shift, and attenuated phase shift, as well as various hybrid mask types. One example of a programmable mirror array uses a matrix array of small mirrors, and each small mirror can be individually tilted to reflect the incoming radiation beam in various directions. The tilted mirror imparts a pattern to the radiation beam reflected by the mirror matrix.

  [0025] As used herein, the term "projection system" refers to a refractive, reflective, suitable for the exposure radiation used, or other factors such as the use of immersion liquid or the use of a vacuum, It should be construed broadly to encompass any type of projection system, including catadioptric, magnetic, electromagnetic, and electrostatic optics, or any combination thereof. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.

  [0026] As shown herein, the lithographic apparatus is of a reflective type (eg employing a reflective mask). Alternatively, the lithographic apparatus may be of a transmissive type (eg employing a transmissive mask).

  [0027] The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and / or two or more mask tables). In such “multi-stage” machines, additional tables can be used in parallel, or one or more tables are used for exposure while a preliminary process is performed on one or more tables. You can also.

  [0028] Further, the lithographic apparatus is of a type capable of covering at least a part of the substrate with a liquid (eg, water) having a relatively high refractive index so as to fill a space between the projection system and the substrate. There may be. An immersion liquid may also be added to another space in the lithographic apparatus (eg, between the mask and the projection system). Immersion techniques are well known in the art by increasing the numerical aperture of projection systems. The term “immersion” as used herein does not mean that a structure, such as a substrate, must be submerged in the liquid, but simply the liquid between the projection system and the substrate during exposure. It means that.

  [0029] Referring to FIG. 1, the illuminator IL receives a radiation beam from a radiation source SO. For example, if the radiation source is an excimer laser, the radiation source and the lithographic apparatus may be separate components. In such a case, the radiation source is not considered to form part of the lithographic apparatus, and the radiation beam passes from the radiation source SO to the illuminator IL, for example with a suitable guiding mirror and / or beam expander. It is sent using a beam delivery system BD containing (not shown in FIG. 1). In other cases the source may be an integral part of the lithographic apparatus, for example when the source is a mercury lamp. The radiation source SO and the illuminator IL may be referred to as a radiation system, together with a beam delivery system BD if necessary.

  [0030] The illuminator IL may include an adjuster AD (not shown in FIG. 1) for adjusting the angular intensity distribution of the radiation beam. In general, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in the illuminator pupil plane can be adjusted. In addition, the illuminator IL may include various other components such as an integrator IN (not shown in FIG. 1) and a capacitor CO (not shown in FIG. 1). By adjusting the radiation beam using an illuminator, the desired uniformity and intensity distribution can be provided in the cross section of the radiation beam.

  [0031] The radiation beam B is incident on the patterning device (eg, mask MA), which is held on the support structure (eg, mask table MT), and is patterned by the patterning device. After being reflected by the patterning device (eg mask) MA, the radiation beam B passes through the projection system PS, which focuses the beam onto the target portion C of the substrate W. The substrate table is used, for example, to position various target portions C in the path of the radiation beam B using the second positioner PW and the position sensor IF2 (eg, interferometer device, linear encoder, or capacitive sensor). The WT can be moved accurately. Similarly, the first positioner PM and another position sensor IF1 are used to accurately position the patterning device (eg mask) MA with respect to the path of the radiation beam B, eg after mechanical removal from the mask library or during a scan. It can also be positioned. Usually, movement of the support structure (eg mask table) MT can be achieved using a long stroke module (coarse positioning) and a short stroke module (fine positioning) that form part of the first positioner PM. Similarly, movement of the substrate table WT can also be achieved using a long stroke module and a short stroke module that form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the support structure (eg mask table) MT may be connected to a short stroke actuator only, or may be fixed. Patterning device (eg mask) MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. In the illustration, the substrate alignment mark occupies a dedicated target portion, but the substrate alignment mark can also be placed in the space between the target portion (these are known as scribe line alignment marks). Similarly, if multiple dies are provided on the patterning device (eg mask) MA, mask alignment marks may be placed between the dies.

  [0032] The exemplary apparatus can be used in at least one of the modes described below.

  [0033] In step mode, the entire pattern applied to the radiation beam is projected onto the target portion C at a time (ie, single) while the support structure (eg mask table) MT and the substrate table WT remain essentially stationary. Static exposure). Thereafter, the substrate table WT is moved in the X and / or Y direction so that another target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged during a single static exposure.

  [0034] 2. In scan mode, the support structure (eg mask table) MT and substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (ie, a single dynamic exposure). The speed and direction of the substrate table WT relative to the support structure (eg mask table) MT can be determined by the (reduction) magnification factor and image reversal characteristics of the projection system PS. In the scan mode, the maximum size of the exposure field limits the width of the target portion during single dynamic exposure (non-scan direction), while the length of the scan operation determines the height of the target portion (scan direction). Determined.

  [0035] 3. In another mode, with the programmable patterning device held, the support structure (mask table) MT remains essentially stationary and the substrate table WT is moved or scanned while being attached to the radiation beam. A pattern is projected onto the target portion C. In this mode, a pulsed radiation source is typically employed, and the programmable patterning device can also be used after each movement of the substrate table WT or between successive radiation pulses during a scan as needed. Updated. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as described above.

  [0036] Combinations and / or variations on the above described modes of use or entirely different modes of use may also be employed.

  [0037] FIG. 2 shows a schematic diagram of a module 1 configured to generate extreme ultraviolet radiation, according to an embodiment of the invention. The module 1 preferably functions as a radiation source SO and can provide a radiation beam to the illuminator IL. The module 1 includes a source (eg, a fluid source) 2 configured to supply one or more droplets 4 of igniting material to a predetermined target ignition position TIP. In addition, a radiation source, for example a laser or a laser source 6, is included in the module 1, and the laser 6 generates a plasma 8 that generates extreme ultraviolet rays by colliding with a droplet 4 at a predetermined target ignition position TIP. Thus, the beam is configured to be focused on a predetermined target ignition position TIP. In one embodiment, the droplet may be positioned proximate to the chamber axis. Module 1 further includes a collector mirror 12 that includes a mirror surface 14 configured to reflect the radiation to focus the radiation to the focal point FP, and a mirror surface 14 to mitigate particle debris generated by the plasma. It further includes a chamber 10 that includes a fluid source 16 configured to form a gas flow GF that flows away from the mirror surface 14 in a transverse direction D.

[0038] Particle debris is preferably mitigated using the Peclet effect. The so-called Peclet number represents the flow advection speed relative to the flow diffusion speed, which is usually thermal diffusion. The Peclet number is equal to the product of Reynold number and Prandtl number in the case of thermal diffusion, and is equal to the product of Reynolds number and Schmidt number in the case of mass dispersion. By making the flow so that its advection is high enough, the Peclet number is high, so that the particle debris reaching the collector mirror is low enough. A suitable velocity of the gas flow can be found above a velocity of about 5 m / s. Hydrides such as SnH ₄ can be carried away from the collector mirror surface 14 at a speed of about 5 m / s or more. Typically, the gas flow velocity may be 100 m / s.

  [0039] In one embodiment, the focal point may be positioned proximate to the axis. This axis may be the optical axis. The gas flow GF may be continuously supplied by the aperture 18 during plasma generation.

  [0040] Since the heat load of the substantially stationary buffer gas in the vicinity of the target ignition position can cause deformation and deterioration of the collector mirror, a gas flow is formed when the module 1 shown in FIG. 2 operates. This gas flow GF flows away from the mirror surface 14, thereby reducing the amount of heat contact between the gas in the gas flow GF and the mirror surface 14.

  [0041] One or more apertures 18 may be provided in the mirror 12 that function as the fluid supply source 16, and each aperture is configured to allow at least a portion of the gas flow GF to pass therethrough. Preferably, one or more apertures 20 may be provided in the laser 6 to allow at least a portion of the gas flow GF to pass. In another embodiment, the gas flow GF is supplied to the chamber 10 by a plurality of fluid sources (ie, fluid supply units) 22 disposed within the module 1. Each fluid supply 22 is configured to provide a gas substream, and each substream is directed to the central region such that a gas flow away from the mirror surface is provided by a collision between the substreams occurring in the central region.

  The module 1 includes a pump 24 configured to pump gas out of the chamber 10. Preferably, the pump 24 is operated by a pressure controller 21 configured to control the pump 24 to maintain the pressure at a level in the range of about 10 Pa to 400 Pa, more specifically in the range of about 20 Pa to 200 Pa. Be controlled. A very suitable pressure level is 100 Pa. Due to the relatively high operating temperature, such gas pressures do not compromise the system's transmission to extreme ultraviolet light, especially when the gas is hydrogen. It will be appreciated that the pressure may be controlled in other ways, for example by controlling the fluid source 16 rather than the pump 24.

  [0043] When this module is included in a lithographic projection apparatus, such as the apparatus shown in FIG. 1, the pump 24 functions to prevent the flow of gas GF from flowing into other parts of the apparatus, such as the illumination system IL. Yes.

  [0044] As noted above, the gas stream may include molecular and / or atomic hydrogen, or any other suitable gas. The gas can be supplied by the fluid source 16 by supplying the gas. The fluid supply source may supply liquid that changes to the gas phase upon entering the chamber 10.

  [0045] Referring to FIG. 3, an alternative to the embodiment of FIG. 2 is disclosed. The embodiment of FIG. 3 is similar to the embodiment of FIG. The difference is that in the embodiment of FIG. 3, the fluid supply 2 includes one or more manifolds 26 located in close proximity to the mirror surface 14 of the collector mirror 12. The manifold 26 is configured to supply a gas flow through the plurality of apertures 18. By using the manifold 26 which may be a separate structure from the collector mirror 12, it is not necessary to provide an aperture in the collector mirror 12. This greatly increases the manufacturability of the module according to the invention.

  [0046] In the embodiment of FIG. 3, the manifold 26 is positioned within the chamber 10 such that the aperture 18 directs the gas to the plasma target ignition position.

  FIG. 4 is a side view of the collector mirror 12 of FIG. However, in FIG. 4, the laser source 6 is shown and the laser source 6 extends through the hole 28 (see also FIG. 3).

  [0048] FIG. 5 is a side view of yet another embodiment of a module. The embodiment of FIG. 5 is quite similar to the embodiment of FIG. However, in FIG. 5, module 1 further includes a gas collection system 30 configured to collect a gas stream that includes at least a portion of at least a portion of the particles from the particle debris. As shown in FIG. 5, the gas collection system is configured to collect a gas flow at a position opposite the fluid supply relative to the target ignition position. The fluid source 16 and the gas collection system are configured such that the gas flow reaches a velocity of about 100 m / s, or any other flow rate in the range of 10 m / s to 1000 m / s.

  [0049] As described above, the gas flow supplied by the fluid source 16 in FIG. 5 is a fairly thin jet. The use of the gas collection system 30 may be combined with the type of aperture 16 of the embodiment of FIGS. 2 and 3, respectively. In this way, a more homogeneous and wider gas flow can be obtained as a background gas flow.

  [0050] Figures 6 and 7 disclose a further module 101 for generating extreme ultraviolet (EUV). The module includes an extreme ultraviolet-emitting source, which is provided with a source configured to supply a fluid of ignition material to a predetermined target ignition position TIP. For purposes of clarity, although not shown in FIGS. 6 and 7, the source may be the same as or at least similar to source 2 shown in FIG.

  [0051] The emission source may further include a target ignition mechanism 106, which is a laser configured to generate plasma from the igniting material in the target ignition position in each of the embodiments of FIGS. The plasma emits EUV radiation. In this case, the emission source is a laser produced plasma (LPP) source and extends through a hole in the collector mirror 112 having a mirror surface 114. Another type of such emission source is a discharge produced plasma (DPP) source.

  [0052] A collector 112 is included in the module 101 and has a heat sink 132 having a thermal energy redirecting surface 134 configured to divert the radiation emitted by the plasma away from the focal point FP and the target ignition position TIP. Match with. Advantageously, the heat sink 132 may be located at a location proximate to the target ignition position as shown in FIGS.

  [0053] In the embodiment of FIGS. 6 and 7, the module includes a chamber (not shown in its entirety in the drawings) in which the emission source, collector mirror 112, and heat sink 132 are disposed. The chamber may contain hydrogen molecules, hydrogen radicals, or a mixture thereof.

  The module 101 in FIG. 6 is different from the module 101 in FIG. 7 in that the heat sink 132 of the module 101 shown in FIG. 7 is cylindrical (see FIG. 8), whereas the heat sink 132 of the module 101 shown in FIG. Is conical (FIG. 9) and differs in that it gradually narrows toward the focal point FP. Typically, the heat sink 132 may have a cross section with a diameter of about 80 mm or about 160 mm. The opening angle of the conical heat sink 132 of FIG. 9 is about 10 ° or about 20 °.

  [0055] In both the embodiments of FIGS. 6 and 7, the heat sink 132 is directed by the collector mirror 112 toward the focal point FP by being protected by the collector mirror non-reflecting portion 136 from being reflected by the mirror surface 114 of the mirror 112. Placed in an area where there is no emitted radiation. This non-reflective portion 136 of the collector mirror is not reflective. This is because the target ignition mechanism 106, that is, the position where the laser extends through the collector mirror 112. Thus, the heat sink 132 does not block any EUV radiation reflected by the collector mirror 112 and thus has no detrimental effect on the EUV radiation intensity at the focal point FP.

  [0056] Although specific reference is made herein to the use of a lithographic apparatus in IC manufacturing, the lithographic apparatus described herein is an integrated optical system, a guidance pattern and a detection pattern for a magnetic domain memory, It should be understood that other applications such as the manufacture of flat panel displays, liquid crystal displays (LCDs), thin film magnetic heads and the like may be had. As will be appreciated by those skilled in the art, in such other applications, the terms “wafer” or “die” as used herein are all more general “substrate” or “target” respectively. It may be considered synonymous with the term “part”. The substrate described herein can be used, for example, before or after exposure, such as a track (usually a tool for applying a resist layer to the substrate and developing the exposed resist), a metrology tool, and / or an inspection tool. May be processed. Where applicable, the disclosure herein may be applied to substrate processing tools such as those described above and other substrate processing tools. Further, since the substrate may be processed multiple times, for example, to make a multi-layer IC, the term substrate as used herein may refer to a substrate that already contains multiple processing layers.

  [0057] Although specific reference has been made to the use of embodiments of the present invention in the context of optical lithography as described above, it will be appreciated that the present invention may be used in other applications, such as imprint lithography. However, it is not limited to optical lithography if the situation permits. In imprint lithography, the topography within the patterning device defines the pattern that is created on the substrate. The topography of the patterning device is pressed into a resist layer supplied to the substrate, whereupon the resist is cured by electromagnetic radiation, heat, pressure, or a combination thereof. The patterning device is moved out of the resist leaving a pattern in it after the resist is cured.

  [0058] As used herein, the terms "radiation" and "beam" refer to ultraviolet (UV) (eg, 365 nm, 355 nm, 248 nm, 193 nm, 157 nm, or 126 nm wavelengths, or approximately the wavelength of these values). ), And extreme ultraviolet (EUV) (e.g., having a wavelength in the range of 5-20 nm), and all types of electromagnetic radiation, including particulate beams such as ion beams and electron beams.

  [0059] The term "lens" may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components, depending on the context. .

  [0060] While specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. For example, the invention may be in the form of a computer program comprising a sequence of one or more machine-readable instructions representing the methods disclosed above, or a data storage medium (eg, semiconductor memory, magnetic A disc or an optical disc).

  [0061] The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.

Claims (14)

A method of generating extreme ultraviolet radiation,
Directing a radiation beam, e.g. a laser beam, onto a droplet of igniting material located at a predetermined target ignition position, turning the droplet into a plasma that generates extreme ultraviolet radiation;
Reflecting the extreme ultraviolet light using a collector mirror including a mirror surface to focus the extreme ultraviolet light;
Providing a gas flow that flows away from the mirror surface in a direction substantially transverse to the mirror surface to reduce particle debris generated by the plasma;
Only including,
The gas flow flowing away from the mirror surface is provided by one or more manifolds disposed at positions facing the collector mirror;
Method.   The method of claim 1, wherein the gas stream comprises molecular and / or atomic hydrogen.   The method according to claim 1 or 2, wherein the target ignition position and the mirror are arranged in a chamber, and the gas pressure in the chamber is maintained between about 10 Pa and 400 Pa. The method according to claim 1, wherein thermal energy is diverted from the target ignition position by a heat sink disposed at a position proximate to the target ignition position. 5. A method according to any preceding claim, wherein the gas stream comprising at least a portion of the particles from the particle debris is collected.   The method of claim 5, wherein the gas stream comprising at least a portion of the particles from the particle debris is collected at a position opposite the mirror surface with respect to the target ignition position. A module that generates extreme ultraviolet radiation,
A source for supplying one or more droplets of ignition material to a predetermined target ignition position;
A laser beam focused on the predetermined target ignition position is supplied, and a plasma is generated by colliding with a droplet disposed at the predetermined target ignition position, thereby converting the droplet into an extreme ultraviolet generation plasma. A radiation source;
A collector mirror including a mirror surface that reflects the extreme ultraviolet rays and focuses the extreme ultraviolet rays;
A fluid source that forms a gas flow that flows away from the mirror surface in a direction substantially transverse to the mirror surface to mitigate particle debris generated by the plasma;
Only including,
The fluid supply source includes one or more manifolds arranged to face the collector mirror and supplying the gas flow;
module.   The module of claim 7, wherein the module includes a chamber, and the target ignition position and the mirror are disposed in the chamber. 9. A module according to claim 7 or 8, wherein the module includes one or more pumps for delivering gas from the chamber. A heat sink having a thermal energy redirecting surface that diverts thermal energy from the target ignition position;
The module according to claim 7, wherein the heat sink is disposed at a position close to the target ignition position. The module of claim 10, wherein the position at which the heat sink is at least partially disposed is in a region of no radiation directed to the focal point by the collector mirror. A module that generates extreme ultraviolet radiation,
A fuel supply for supplying the ignition material to a desired location proximate to the axis in the chamber;
A radiation source that outputs a radiation beam, the radiation beam being directed to the desired location, thereby irradiating the ignition material to form a plasma that emits extreme ultraviolet radiation; and
A collector mirror including a mirror surface positioned in the chamber, the mirror surface reflecting the extreme ultraviolet light and focusing on a focal point positioned close to the axis; and
A fluid source that provides a gas flow substantially along the direction of the axis to mitigate particle debris produced by the plasma;
Only including,
The fluid supply source includes one or more manifolds arranged to face the collector mirror and supplying the gas flow;
module. A lithographic projection apparatus for projecting a pattern from a patterning device onto a substrate,
An illumination system for adjusting the radiation beam;
A support for holding a patterning device capable of providing a pattern in a cross-section of the radiation beam to form a patterned radiation beam;
A substrate table for holding the substrate;
A projection system for projecting the patterned radiation beam onto a target portion of the substrate;
A module according to any one of claims 7 to 12,
Including the device. A method of generating extreme ultraviolet radiation,
Irradiating the ignition material with a radiation beam to form a plasma that emits extreme ultraviolet radiation;
Using a collector mirror including a mirror surface to reflect and focus the extreme ultraviolet light;
Providing a gas flow away from the mirror surface in a direction substantially transverse to the mirror surface to reduce particle debris produced by the plasma;
Only including,
The gas flow flowing away from the mirror surface is provided by one or more manifolds disposed at positions facing the collector mirror;
Method.