KR101495208B1 - 극자외 방사선을 생성하는 방법 및 모듈 - Google Patents

극자외 방사선을 생성하는 방법 및 모듈 Download PDF

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KR101495208B1
KR101495208B1 KR1020107006269A KR20107006269A KR101495208B1 KR 101495208 B1 KR101495208 B1 KR 101495208B1 KR 1020107006269 A KR1020107006269 A KR 1020107006269A KR 20107006269 A KR20107006269 A KR 20107006269A KR 101495208 B1 KR101495208 B1 KR 101495208B1
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South Korea
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radiation
mirror surface
delete delete
gas flow
plasma
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Korean (ko)
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KR20100063082A (ko
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타르코 아드리안 루돌프 반 엠펠
바딤 예프겐예비치 바니네
블라디미르 비탈에비치 이바노프
에릭 로엘로프 루프스트라
얀 베르나르트 플레첼무스 반 슈트
유리 요한네스 가브리엘 반 데 비베르
게라르두스 후베르투스 페트루스 마리아 스빈켈스
헨드리쿠스 히스베르투스 스히멜
드미트리 라베츠키
요한네스 후베르투스 요제피나 무어스
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에이에스엠엘 네델란즈 비.브이.
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Priority claimed from US12/078,663 external-priority patent/US7763871B2/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
KR1020107006269A 2007-08-23 2008-08-25 극자외 방사선을 생성하는 방법 및 모듈 Active KR101495208B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US93564307P 2007-08-23 2007-08-23
US60/935,643 2007-08-23
US12/078,663 2008-04-02
US12/078,663 US7763871B2 (en) 2008-04-02 2008-04-02 Radiation source
US13614808P 2008-08-14 2008-08-14
US13614508P 2008-08-14 2008-08-14
US61/136,148 2008-08-14
US61/136,145 2008-08-14
PCT/NL2008/050567 WO2009025557A1 (en) 2007-08-23 2008-08-25 Module and method for producing extreme ultraviolet radiation

Publications (2)

Publication Number Publication Date
KR20100063082A KR20100063082A (ko) 2010-06-10
KR101495208B1 true KR101495208B1 (ko) 2015-02-25

Family

ID=39968777

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KR1020107006269A Active KR101495208B1 (ko) 2007-08-23 2008-08-25 극자외 방사선을 생성하는 방법 및 모듈

Country Status (4)

Country Link
JP (1) JP5191541B2 (enExample)
KR (1) KR101495208B1 (enExample)
CN (1) CN101785369A (enExample)
WO (1) WO2009025557A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5732392B2 (ja) 2008-08-14 2015-06-10 エーエスエムエル ネザーランズ ビー．ブイ． 放射源およびリソグラフィ装置
EP2414898A1 (en) * 2009-04-02 2012-02-08 ETH Zurich Extreme ultraviolet light source with a debris-mitigated and cooled collector optics
JP2013522889A (ja) 2010-03-18 2013-06-13 イーティーエイチ・チューリッヒ 極紫外線を集める光学コレクタ、そのような光学コレクタを動作させる方法、及びそのようなコレクタを備えるｅｕｖ源
WO2011116898A1 (en) 2010-03-25 2011-09-29 Eth Zurich Steering device for controlling the direction and/or velocity of droplets of a target material and extreme euv source with such a steering device
US20130134318A1 (en) 2010-03-25 2013-05-30 Reza Abhari Beam line for a source of extreme ultraviolet (euv) radiation
KR101819053B1 (ko) 2010-04-22 2018-01-16 에이에스엠엘 네델란즈 비.브이. 극자외 방사선을 생성하는 컬렉터 거울 조립체 및 방법
CN102231935A (zh) * 2011-05-31 2011-11-02 长春理工大学 一种产生相干极紫外辐射的方法及装置
DE102011086565A1 (de) * 2011-11-17 2012-11-15 Carl Zeiss Smt Gmbh Kollektor
US9453801B2 (en) 2012-05-25 2016-09-27 Kla-Tencor Corporation Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems
US9662688B2 (en) 2012-07-09 2017-05-30 Kla-Tencor Corporation Apparatus and method for cross-flow purge for optical components in a chamber
CN103108481B (zh) * 2012-11-30 2016-03-30 中国科学院微电子研究所 一种集光系统防污染保护装置
CN103064259B (zh) * 2012-12-10 2014-11-12 华中科技大学 一种极紫外激光等离子体光源碎屑的隔离方法及系统
WO2014090480A1 (en) * 2012-12-12 2014-06-19 Asml Netherlands B.V. Power source for a lithographic apparatus, and lithographic apparatus comprising such a power source
US9301382B2 (en) * 2013-12-02 2016-03-29 Asml Netherlands B.V. Apparatus for and method of source material delivery in a laser produced plasma EUV light source
WO2015086232A1 (en) * 2013-12-09 2015-06-18 Asml Netherlands B.V. Radiation source device, lithographic apparatus and device manufacturing method
US10101664B2 (en) 2014-11-01 2018-10-16 Kla-Tencor Corporation Apparatus and methods for optics protection from debris in plasma-based light source
US10034362B2 (en) 2014-12-16 2018-07-24 Kla-Tencor Corporation Plasma-based light source
US9541840B2 (en) 2014-12-18 2017-01-10 Asml Netherlands B.V. Faceted EUV optical element
US9625824B2 (en) 2015-04-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd Extreme ultraviolet lithography collector contamination reduction
WO2017077641A1 (ja) * 2015-11-06 2017-05-11 ギガフォトン株式会社 極端紫外光生成装置
US10495987B2 (en) * 2017-09-28 2019-12-03 Taiwan Semiconductor Manufacturing Co., Ltd. Radiation source apparatus, EUV lithography system, and method for decreasing debris in EUV lithography system
JP7311296B2 (ja) 2019-04-01 2023-07-19 ギガフォトン株式会社 Ｅｕｖチャンバ装置、極端紫外光生成システム、及び電子デバイスの製造方法
JP7553296B2 (ja) * 2020-09-16 2024-09-18 ギガフォトン株式会社 極端紫外光生成装置、及び電子デバイスの製造方法
US11635700B2 (en) * 2021-02-17 2023-04-25 Kla Corporation Method and apparatus for EUV mask inspection

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080255A (ja) * 2004-09-09 2006-03-23 Komatsu Ltd 極端紫外光源装置
JP2006286623A (ja) * 2005-03-31 2006-10-19 Xtreme Technologies Gmbh 短波長放射線発生のための放射線源

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6831963B2 (en) * 2000-10-20 2004-12-14 University Of Central Florida EUV, XUV, and X-Ray wavelength sources created from laser plasma produced from liquid metal solutions
US20060255298A1 (en) * 2005-02-25 2006-11-16 Cymer, Inc. Laser produced plasma EUV light source with pre-pulse
CN101795527B (zh) * 2002-09-19 2013-02-20 Asml荷兰有限公司 辐射源、光刻装置和器件制造方法
US7164144B2 (en) * 2004-03-10 2007-01-16 Cymer Inc. EUV light source
JP2006202671A (ja) * 2005-01-24 2006-08-03 Ushio Inc 極端紫外光光源装置及び極端紫外光光源装置で発生するデブリの除去方法
US7868304B2 (en) * 2005-02-07 2011-01-11 Asml Netherlands B.V. Method for removal of deposition on an optical element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7365349B2 (en) * 2005-06-27 2008-04-29 Cymer, Inc. EUV light source collector lifetime improvements
JP4710463B2 (ja) * 2005-07-21 2011-06-29 ウシオ電機株式会社 極端紫外光発生装置
US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
JP2007134166A (ja) * 2005-11-10 2007-05-31 Ushio Inc 極端紫外光光源装置
US7372049B2 (en) * 2005-12-02 2008-05-13 Asml Netherlands B.V. Lithographic apparatus including a cleaning device and method for cleaning an optical element
US7504643B2 (en) * 2005-12-22 2009-03-17 Asml Netherlands B.V. Method for cleaning a lithographic apparatus module, a cleaning arrangement and a lithographic apparatus comprising the cleaning arrangement
JP5108367B2 (ja) * 2007-04-27 2012-12-26 ギガフォトン株式会社 極端紫外光源装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006080255A (ja) * 2004-09-09 2006-03-23 Komatsu Ltd 極端紫外光源装置
JP2006286623A (ja) * 2005-03-31 2006-10-19 Xtreme Technologies Gmbh 短波長放射線発生のための放射線源

Also Published As

Publication number Publication date
WO2009025557A1 (en) 2009-02-26
JP5191541B2 (ja) 2013-05-08
KR20100063082A (ko) 2010-06-10
JP2010537424A (ja) 2010-12-02
CN101785369A (zh) 2010-07-21

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