JP5187343B2 - 圧接型半導体装置 - Google Patents
圧接型半導体装置 Download PDFInfo
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- JP5187343B2 JP5187343B2 JP2010102462A JP2010102462A JP5187343B2 JP 5187343 B2 JP5187343 B2 JP 5187343B2 JP 2010102462 A JP2010102462 A JP 2010102462A JP 2010102462 A JP2010102462 A JP 2010102462A JP 5187343 B2 JP5187343 B2 JP 5187343B2
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- 239000004065 semiconductor Substances 0.000 title claims description 122
- 239000011248 coating agent Substances 0.000 claims description 98
- 238000000576 coating method Methods 0.000 claims description 98
- 239000000758 substrate Substances 0.000 claims description 79
- 238000007789 sealing Methods 0.000 claims description 70
- 230000002093 peripheral effect Effects 0.000 claims description 53
- 229920002379 silicone rubber Polymers 0.000 claims description 7
- 239000004945 silicone rubber Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 description 5
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 230000005489 elastic deformation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010445 mica Substances 0.000 description 3
- 229910052618 mica group Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
Description
図1はこの発明の実施の形態1における圧接型半導体装置の圧接前の状態を示す縦断面図である。
図1には、仮組みされたセンターゲートタイプの圧接型半導体装置の一例として、GTO(Gate Turn Off)サイリスタが示される。この圧接型半導体装置は、電力用として、BTB(電力系統連携装置)、SVG(無効電力発生装置)等に適用される。また、圧接型半導体装置は、工業用として、製鉄圧延機駆動用インバータ等に適用される。さらに、圧接型半導体装置は、その他高電圧・大容量スイッチ等に適用される。以下、本実施の形態の圧接型半導体装置について説明する。
図2は図1のA部詳細図である。
図2に示すように、外部カソード電極20の外周面には、水平方向に延びる溝27が形成される。この溝27は、外部カソード電極20の外周面よりも引っ込んだ段差となる。この段差への密閉体25の嵌め込みは、次のように行われる。
図3はこの発明の実施の形態1における圧接型半導体装置の圧接後の状態を示す縦断面図である。
2 アノード電極
3 ゲート電極
4 カソード電極
5 コーティング体
6 外部アノード電極体
7 外部アノード電極
8 フランジ
9 ピン
10 アノード歪緩衝板
11 外部ゲート電極体
12 外部ゲート電極
13 ゲートリード線
14 ゲートスリーブ
15 ゲートパイプ
16 支持管
17 マイカワッシャ
18 弾性体
19 外部カソード電極体
20 外部カソード電極
21 フランジ
22 カソード歪緩衝板
23 絶縁筒
24 空間
25 密閉体
26 貫通穴
27 溝
28 ガイドリング
Claims (7)
- 主面の一面に圧接電極が形成された半導体基体と、
前記半導体基体の外縁部を縁取ったコーティング体と、
前記圧接電極に接触した外部圧接電極体と、
前記主面の一面及び前記外部圧接電極体の互いの対向面を前記半導体基体の外側から囲むように前記外部圧接電極体の外周面と前記コーティング体との間にまたがって配置され、変形することにより前記コーティング体にかかる荷重が前記コーティング体を前記半導体基体から剥がすのに要する荷重よりも小さくなる状態を維持した密閉体と、
を備えたことを特徴とする圧接型半導体装置。 - 前記密閉体は、前記コーティング体側端部を前記コーティング体の外周面よりも前記半導体基体の中心側で前記コーティング体の前記外部圧接電極体側に接触させた状態で、前記コーティング体側と前記外部圧接電極体側との間の中央部を撓ませていることを特徴とする請求項1記載の圧接型半導体装置。
- 前記密閉体の厚みを0.5mm〜2.0mmとしたことを特徴とする請求項1又は請求項2に記載の圧接型半導体装置。
- 前記コーティング体と前記密閉体とは、シリコーンゴムで形成されたことを特徴とする請求項1〜請求項3のいずれかに記載の圧接型半導体装置。
- 前記外部圧接電極体は、外周面に溝が形成され、
前記密閉体は、前記外部圧接電極体側が前記溝に嵌め込まれた状態で変形していることを特徴とする請求項1〜請求項4のいずれかに記載の圧接型半導体装置。 - 前記圧接電極とは異なる位置で前記主面の一面に形成されたゲート電極と、
前記ゲート電極に接触した外部ゲート電極と、
前記外部ゲート電極を前記ゲート電極に押し付けている弾性体と、
を備え、
前記外部圧接電極体は、前記圧接電極とは反対方向の荷重を前記弾性体から受けていることを特徴とする請求項1〜請求項5のいずれかに記載の圧接型半導体装置。 - 前記圧接電極は、カソード電極からなり、
前記外部圧接電極体は、
外部カソード電極と、
前記外部カソード電極と前記カソード電極との間に設けられ、前記外部カソード電極と前記カソード電極とに接触した状態で、前記外部ゲート電極を支持したカソード歪緩衝板と、
を備えたことを特徴とする請求項6記載の圧接型半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010102462A JP5187343B2 (ja) | 2010-04-27 | 2010-04-27 | 圧接型半導体装置 |
DE102011017563.6A DE102011017563B4 (de) | 2010-04-27 | 2011-04-26 | Druckkontakthalbleitervorrichtung |
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JP2010102462A JP5187343B2 (ja) | 2010-04-27 | 2010-04-27 | 圧接型半導体装置 |
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JP2011233704A JP2011233704A (ja) | 2011-11-17 |
JP5187343B2 true JP5187343B2 (ja) | 2013-04-24 |
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JP2010102462A Active JP5187343B2 (ja) | 2010-04-27 | 2010-04-27 | 圧接型半導体装置 |
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DE (1) | DE102011017563B4 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP6011206B2 (ja) * | 2012-09-27 | 2016-10-19 | 三菱電機株式会社 | 圧接型半導体装置、圧接型半導体装置の製造方法 |
RU2591744C2 (ru) * | 2014-12-08 | 2016-07-20 | Открытое акционерное общество "Электровыпрямитель" | Тиристор |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2118356A1 (de) * | 1971-04-15 | 1972-10-26 | Siemens AG, 1000 Berlin u. 8000 München | Scheibenförmiges Halbleiterbauelement |
JPS5294777A (en) * | 1976-02-05 | 1977-08-09 | Nec Corp | Semiconductor device |
JPS5797945U (ja) * | 1980-12-05 | 1982-06-16 | ||
DE3421672A1 (de) * | 1984-06-09 | 1985-12-12 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Wechsellastbestaendiges, schaltbares halbleiterbauelement |
JPS61125143A (ja) * | 1984-11-22 | 1986-06-12 | Toshiba Corp | 半導体装置 |
JPS62109327A (ja) | 1985-11-08 | 1987-05-20 | Hitachi Ltd | 全圧接型半導体装置 |
US4829364A (en) * | 1985-11-29 | 1989-05-09 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
JPH04112578A (ja) * | 1990-09-01 | 1992-04-14 | Fuji Electric Co Ltd | 平形半導体装置 |
JPH08167625A (ja) * | 1994-12-14 | 1996-06-25 | Hitachi Ltd | 圧接型半導体装置の製造法 |
JPH10135446A (ja) * | 1996-10-30 | 1998-05-22 | Hitachi Ltd | 圧接型半導体装置 |
-
2010
- 2010-04-27 JP JP2010102462A patent/JP5187343B2/ja active Active
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2011
- 2011-04-26 DE DE102011017563.6A patent/DE102011017563B4/de active Active
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DE102011017563B4 (de) | 2015-10-22 |
JP2011233704A (ja) | 2011-11-17 |
DE102011017563A1 (de) | 2011-10-27 |
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