JP5178760B2 - 半導体デバイスの製造方法及び製造システム - Google Patents
半導体デバイスの製造方法及び製造システム Download PDFInfo
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Description
1.工程モードでは、放射ビームBに付与された全パターンが一度にターゲット部分Cの上に投影されている(すなわち単一静的露光)間、サポート構造(例えばマスクテーブル)MT、および基板テーブルWTが実質的に静止状態に維持される。次に、基板テーブルWTは、別のターゲット部分Cを露光できるようにXおよび/またはYの方向に移動される。
2.スキャンモードでは、放射ビームBに付与されたパターンがターゲット部分Cの上に投影されている(すなわち単一動的露光)間、サポート構造(例えばマスクテーブル)MTと基板テーブルWTが同期してスキャンされる。サポート構造(例えばマスクテーブル)MTに対する基板テーブルWTの速度および方向は、投影システムPSの拡大(縮小)および像反転の諸特性によって決定することができる。
3.もう1つのモードでは、サポート構造(例えばマスクテーブル)MTは、プログラマブルパターニングデバイスを保持しながら実質的に静止状態に維持され、放射ビームBに付与されたパターンがターゲット部分Cに投影されている間、基板テーブルWTが移動またはスキャンされる。パルス放射源SOを使用することができ、プログラマブルパターニングデバイスが、基板テーブルWTの各移動の後に、または一回のスキャン中の連続する放射パルスの間に、必要に応じて更新される。この動作モードは、本明細書で言及されたタイプのプログラマブルミラーアレイなど、プログラマブルパターニングデバイスを利用するマスクレスリソグラフィに容易に適用することができる。
ここでRsは半ピッチ解像度、λは照明波長、NAは光学システムの開口数、kは照明の構成および部分コヒーレンスに関連するプロセスファクタである。kの最小値は0.25であり、ダイポール照明を使用することに関連している。
Claims (11)
- 半導体デバイスをリソグラフィにより製造する方法であって、
露光用の放射波長において実質的に透過性を有する第1放射感応層で基板を被覆する工程と、
前記第1放射感応層に色素化合物を付加する工程と、
前記第1放射感応層を露光、現像して、位置合わせ用パターンを含む第1リソグラフィパターンを形成する工程と、
前記第1リソグラフィパターンを凍結する工程と、
前記第1リソグラフィパターンを第2放射感応層で被覆する工程と、
前記位置合わせ用パターンの位置をアライメントシステムにより検出する工程と、
前記基板を前記位置合わせ用パターンの前記検出された位置に位置合わせする工程と、
前記第2放射感応層を露光、現像して第2リソグラフィパターンを形成する工程と、
を含み、
前記第2リソグラフィパターンが前記第1リソグラフィパターンに位置合わせされ、
前記色素化合物として、前記露光用の放射波長に実質的に透過性で、前記第1放射感応層への前記色素化合物の添加が前記アライメントシステムの照明波長に対する前記第1放射感応層の透過特性を変え、かつ、前記第1リソグラフィパターンの凍結を増強し得るような材料が選択される、
方法。 - 前記第2リソグラフィパターンを前記第1リソグラフィパターンに間隙をおいて位置合わせする工程をさらに含む、
請求項1に記載の製造方法。 - 前記色素化合物を付加する工程が、前記基板を被覆する工程の前に行われる、
請求項1又は2に記載の製造方法。 - 前記色素化合物を付加する工程が、前記基板を被覆する工程の後で、前記第1放射感応層を露光、現像する工程の前に行われる、
請求項1又は2に記載の製造方法。 - 前記色素化合物を付加する工程が、前記第1放射感応層を露光、現像する工程の後に行われる、
請求項1又は2に記載の製造方法。 - 前記色素化合物が前記アライメントシステムの照明波長において蛍光性または発光性である、
請求項1〜5のいずれかに記載の製造方法。 - 前記色素化合物が前記アライメントシステムの照明波長において実質的に吸収性、または実質的に反射性である、
請求項1〜5のいずれかに記載の製造方法。 - 前記色素化合物がメロシアニン、又はチアトリルカルボシアニンである、
請求項7に記載の製造方法。 - 前記色素化合物が、光活性感光化合物又はフォトクロミック材料である、
請求項1〜5のいずれかに記載の製造方法。 - 半導体デバイスをリソグラフィにより製造するシステムであって、
ダブルパターニングプロセスにおいてアライメントマークを読み取るための特定の波長のアライメントビームを供給する照明源と、
前記ダブルパターニングプロセスにおいて、基板上に被覆された第1放射感応層がパターニングされて形成され、かつ凍結された第1リソグラフィパターンであって、第2放射感応層により被覆された前記第1リソグラフィパターンにおける色素化合物を検出するように構成されたアライメントシステムと、
を備え、
前記色素化合物が、前記第1リソグラフィパターン内に形成された前記アライメントマークに基づいて前記ダブルパターニングプロセスの2つのパターニング工程を位置合わせするときに、前記第1リソグラフィパターンと前記第2放射感応層の間に所望のコントラストを与え、
前記色素化合物として、露光用の放射波長に実質的に透過性で、前記第1放射感応層への前記色素化合物の添加が前記アライメントシステムの照明波長に対する前記第1放射感応層の透過特性を変え、かつ、前記第1リソグラフィパターンの凍結を増強し得るような材料が選択される、
システム。 - 前記第2リソグラフィパターンが間隙をおいて前記第1リソグラフィパターンに位置合わせされる、
請求項10に記載のシステム。
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NL2004297A (en) | 2009-03-20 | 2010-09-21 | Asml Holding Nv | Improving alignment target contrast in a lithographic double patterning process. |
NL2004365A (en) * | 2009-04-10 | 2010-10-12 | Asml Holding Nv | Method and system for increasing alignment target contrast. |
EP2713884B1 (en) * | 2011-06-01 | 2019-07-31 | Total SA | An x-ray tomography device |
US20140086385A1 (en) | 2011-06-01 | 2014-03-27 | Universite De Pau Et Des Pays De L'adour | X-ray tomography device |
EP2602663A1 (en) | 2011-12-09 | 2013-06-12 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | System and method for overlay control |
US8932961B2 (en) | 2012-02-13 | 2015-01-13 | Globalfoundries Inc. | Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques |
TWI517247B (zh) * | 2012-04-06 | 2016-01-11 | 力晶科技股份有限公司 | 一種半導體線路結構暨其製程 |
US10095116B2 (en) * | 2016-12-14 | 2018-10-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography system and lithography method for improving image contrast |
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2010
- 2010-02-25 NL NL2004297A patent/NL2004297A/en not_active Application Discontinuation
- 2010-03-15 TW TW099107497A patent/TWI462150B/zh not_active IP Right Cessation
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TWI462150B (zh) | 2014-11-21 |
JP2010226105A (ja) | 2010-10-07 |
US8980724B2 (en) | 2015-03-17 |
NL2004297A (en) | 2010-09-21 |
TW201106418A (en) | 2011-02-16 |
US8709908B2 (en) | 2014-04-29 |
US20140192333A1 (en) | 2014-07-10 |
US20100301458A1 (en) | 2010-12-02 |
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