JP5176158B1 - ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法 - Google Patents

ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法 Download PDF

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Publication number
JP5176158B1
JP5176158B1 JP2012547354A JP2012547354A JP5176158B1 JP 5176158 B1 JP5176158 B1 JP 5176158B1 JP 2012547354 A JP2012547354 A JP 2012547354A JP 2012547354 A JP2012547354 A JP 2012547354A JP 5176158 B1 JP5176158 B1 JP 5176158B1
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diffusion layer
type diffusion
forming composition
layer forming
type
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Japanese (ja)
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JPWO2013005738A1 (ja
Inventor
鉄也 佐藤
誠人 吉田
剛 野尻
香 岡庭
洋一 町井
光則 岩室
桂子 木沢
明博 織田
修一郎 足立
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
JP2012547354A 2011-07-05 2012-07-03 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法 Expired - Fee Related JP5176158B1 (ja)

Priority Applications (1)

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JP2012547354A JP5176158B1 (ja) 2011-07-05 2012-07-03 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011149249 2011-07-05
JP2011149249 2011-07-05
PCT/JP2012/066985 WO2013005738A1 (ja) 2011-07-05 2012-07-03 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法
JP2012547354A JP5176158B1 (ja) 2011-07-05 2012-07-03 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法

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JP5176158B1 true JP5176158B1 (ja) 2013-04-03
JPWO2013005738A1 JPWO2013005738A1 (ja) 2015-02-23

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JP (1) JP5176158B1 (ko)
KR (2) KR101384874B1 (ko)
CN (5) CN103839787A (ko)
TW (2) TWI570778B (ko)
WO (1) WO2013005738A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839787A (zh) * 2011-07-05 2014-06-04 日立化成株式会社 n型扩散层形成用组合物、n型扩散层的制造方法以及太阳能电池元件的制造方法
TW201603121A (zh) * 2014-07-15 2016-01-16 日立化成股份有限公司 具有n型擴散層的半導體基板的製造方法及太陽電池元件的製造方法
JPWO2016068315A1 (ja) * 2014-10-30 2017-06-15 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法

Citations (7)

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WO2000054341A1 (de) * 1999-03-11 2000-09-14 Merck Patent Gmbh Dotierpasten zur erzeugung von p, p+ und n, n+ bereichen in halbleitern
WO2009116569A1 (ja) * 2008-03-21 2009-09-24 信越化学工業株式会社 拡散用リンペースト及びそれを利用した太陽電池の製造方法
WO2010022030A2 (en) * 2008-08-20 2010-02-25 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
WO2011024408A1 (ja) * 2009-08-27 2011-03-03 東京応化工業株式会社 拡散剤組成物、不純物拡散層の形成方法、および太陽電池
WO2011090216A1 (ja) * 2010-01-25 2011-07-28 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
WO2011132781A1 (ja) * 2010-04-23 2011-10-27 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
WO2011132779A1 (ja) * 2010-04-23 2011-10-27 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法

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US6664567B2 (en) * 2001-06-28 2003-12-16 Kyocera Corporation Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon
US7326367B2 (en) * 2005-04-25 2008-02-05 E.I. Du Pont De Nemours And Company Thick film conductor paste compositions for LTCC tape in microwave applications
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
JP5522900B2 (ja) * 2008-02-22 2014-06-18 東京応化工業株式会社 電極形成用導電性組成物及び太陽電池の形成方法
TW201008889A (en) * 2008-06-06 2010-03-01 Du Pont Glass compositions used in conductors for photovoltaic cells
JP2011525887A (ja) * 2008-06-26 2011-09-29 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 光起電力電池用導体に用いるガラス組成物
JP5414409B2 (ja) * 2009-01-16 2014-02-12 日立粉末冶金株式会社 低融点ガラス組成物、それを用いた低温封着材料及び電子部品
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CN103839787A (zh) * 2011-07-05 2014-06-04 日立化成株式会社 n型扩散层形成用组合物、n型扩散层的制造方法以及太阳能电池元件的制造方法

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Publication number Priority date Publication date Assignee Title
WO2000054341A1 (de) * 1999-03-11 2000-09-14 Merck Patent Gmbh Dotierpasten zur erzeugung von p, p+ und n, n+ bereichen in halbleitern
WO2009116569A1 (ja) * 2008-03-21 2009-09-24 信越化学工業株式会社 拡散用リンペースト及びそれを利用した太陽電池の製造方法
WO2010022030A2 (en) * 2008-08-20 2010-02-25 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
WO2011024408A1 (ja) * 2009-08-27 2011-03-03 東京応化工業株式会社 拡散剤組成物、不純物拡散層の形成方法、および太陽電池
WO2011090216A1 (ja) * 2010-01-25 2011-07-28 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
WO2011132781A1 (ja) * 2010-04-23 2011-10-27 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
WO2011132779A1 (ja) * 2010-04-23 2011-10-27 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池素子の製造方法

Also Published As

Publication number Publication date
KR20140008535A (ko) 2014-01-21
CN107093550A (zh) 2017-08-25
KR20140019473A (ko) 2014-02-14
KR101384874B1 (ko) 2014-04-16
TW201308402A (zh) 2013-02-16
TWI480929B (zh) 2015-04-11
CN105551947A (zh) 2016-05-04
CN103650111A (zh) 2014-03-19
TW201419384A (zh) 2014-05-16
TWI570778B (zh) 2017-02-11
CN103839787A (zh) 2014-06-04
CN105006429A (zh) 2015-10-28
JPWO2013005738A1 (ja) 2015-02-23
WO2013005738A1 (ja) 2013-01-10

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