TWI570778B - ｎ型擴散層形成組成物、ｎ型擴散層的製造方法以及太陽電池元件的製造方法 - Google Patents

ｎ型擴散層形成組成物、ｎ型擴散層的製造方法以及太陽電池元件的製造方法 Download PDF

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Publication number
TWI570778B
TWI570778B TW103101541A TW103101541A TWI570778B TW I570778 B TWI570778 B TW I570778B TW 103101541 A TW103101541 A TW 103101541A TW 103101541 A TW103101541 A TW 103101541A TW I570778 B TWI570778 B TW I570778B
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TW
Taiwan
Prior art keywords
diffusion layer
type diffusion
forming composition
glass powder
layer forming
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TW103101541A
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English (en)
Chinese (zh)
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TW201419384A (zh
Inventor
佐藤鐵也
吉田誠人
野尻剛
岡庭香
町井洋一
岩室光則
木澤桂子
織田明博
足立修一郎
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日立化成股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/08—Frit compositions, i.e. in a powdered or comminuted form containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/16—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions with vehicle or suspending agents, e.g. slip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
TW103101541A 2011-07-05 2012-07-05 ｎ型擴散層形成組成物、ｎ型擴散層的製造方法以及太陽電池元件的製造方法 TWI570778B (zh)

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Application Number Priority Date Filing Date Title
JP2011149249 2011-07-05

Publications (2)

Publication Number Publication Date
TW201419384A TW201419384A (zh) 2014-05-16
TWI570778B true TWI570778B (zh) 2017-02-11

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TW103101541A TWI570778B (zh) 2011-07-05 2012-07-05 ｎ型擴散層形成組成物、ｎ型擴散層的製造方法以及太陽電池元件的製造方法
TW101124252A TWI480929B (zh) 2011-07-05 2012-07-05 ｎ型擴散層形成組成物、ｎ型擴散層的製造方法以及太陽電池元件的製造方法

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Country Status (5)

Country Link
JP (1) JP5176158B1 (ko)
KR (2) KR101384874B1 (ko)
CN (5) CN103839787A (ko)
TW (2) TWI570778B (ko)
WO (1) WO2013005738A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103839787A (zh) * 2011-07-05 2014-06-04 日立化成株式会社 n型扩散层形成用组合物、n型扩散层的制造方法以及太阳能电池元件的制造方法
TW201603121A (zh) * 2014-07-15 2016-01-16 日立化成股份有限公司 具有n型擴散層的半導體基板的製造方法及太陽電池元件的製造方法
JPWO2016068315A1 (ja) * 2014-10-30 2017-06-15 日立化成株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法

Citations (4)

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US20030047735A1 (en) * 2001-06-28 2003-03-13 Takeshi Kyoda Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon
JP2009200276A (ja) * 2008-02-22 2009-09-03 Tokyo Ohka Kogyo Co Ltd 電極形成用導電性組成物及び太陽電池の形成方法
TW201036929A (en) * 2009-01-16 2010-10-16 Hitachi Powdered Metals Low softening point glass composition, bonding material using same and electronic parts
TWI480929B (zh) * 2011-07-05 2015-04-11 Hitachi Chemical Co Ltd ｎ型擴散層形成組成物、ｎ型擴散層的製造方法以及太陽電池元件的製造方法

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US7326367B2 (en) * 2005-04-25 2008-02-05 E.I. Du Pont De Nemours And Company Thick film conductor paste compositions for LTCC tape in microwave applications
WO2009029738A1 (en) * 2007-08-31 2009-03-05 Ferro Corporation Layered contact structure for solar cells
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
KR101631711B1 (ko) * 2008-03-21 2016-06-17 신에쓰 가가꾸 고교 가부시끼가이샤 확산용 인 페이스트 및 그것을 이용한 태양 전지의 제조 방법
TW201008889A (en) * 2008-06-06 2010-03-01 Du Pont Glass compositions used in conductors for photovoltaic cells
JP2011525887A (ja) * 2008-06-26 2011-09-29 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 光起電力電池用導体に用いるガラス組成物
US8053867B2 (en) * 2008-08-20 2011-11-08 Honeywell International Inc. Phosphorous-comprising dopants and methods for forming phosphorous-doped regions in semiconductor substrates using phosphorous-comprising dopants
WO2010147160A1 (ja) * 2009-06-17 2010-12-23 旭硝子株式会社 電極形成用ガラスフリット、およびこれを用いた電極形成用導電ペースト、太陽電池
JP5815215B2 (ja) * 2009-08-27 2015-11-17 東京応化工業株式会社 拡散剤組成物、および不純物拡散層の形成方法
JP4868079B1 (ja) * 2010-01-25 2012-02-01 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
KR101484833B1 (ko) * 2010-04-23 2015-01-21 히타치가세이가부시끼가이샤 ｎ 형 확산층 형성 조성물, ｎ 형 확산층의 제조 방법, 및 태양 전지 소자의 제조 방법
CN102834898B (zh) * 2010-04-23 2016-06-15 日立化成工业株式会社 n型扩散层形成组成物、n型扩散层的制造方法及太阳能电池元件的制造方法

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Publication number Priority date Publication date Assignee Title
US20030047735A1 (en) * 2001-06-28 2003-03-13 Takeshi Kyoda Photoelectric conversion device, glass composition for coating silicon, and insulating coating in contact with silicon
JP2009200276A (ja) * 2008-02-22 2009-09-03 Tokyo Ohka Kogyo Co Ltd 電極形成用導電性組成物及び太陽電池の形成方法
TW201036929A (en) * 2009-01-16 2010-10-16 Hitachi Powdered Metals Low softening point glass composition, bonding material using same and electronic parts
TWI480929B (zh) * 2011-07-05 2015-04-11 Hitachi Chemical Co Ltd ｎ型擴散層形成組成物、ｎ型擴散層的製造方法以及太陽電池元件的製造方法

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Publication number Publication date
KR20140008535A (ko) 2014-01-21
CN107093550A (zh) 2017-08-25
KR20140019473A (ko) 2014-02-14
KR101384874B1 (ko) 2014-04-16
TW201308402A (zh) 2013-02-16
TWI480929B (zh) 2015-04-11
CN105551947A (zh) 2016-05-04
JP5176158B1 (ja) 2013-04-03
CN103650111A (zh) 2014-03-19
TW201419384A (zh) 2014-05-16
CN103839787A (zh) 2014-06-04
CN105006429A (zh) 2015-10-28
JPWO2013005738A1 (ja) 2015-02-23
WO2013005738A1 (ja) 2013-01-10

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