JP5174474B2 - 磁気記録媒体の製造方法 - Google Patents
磁気記録媒体の製造方法 Download PDFInfo
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- JP5174474B2 JP5174474B2 JP2008008936A JP2008008936A JP5174474B2 JP 5174474 B2 JP5174474 B2 JP 5174474B2 JP 2008008936 A JP2008008936 A JP 2008008936A JP 2008008936 A JP2008008936 A JP 2008008936A JP 5174474 B2 JP5174474 B2 JP 5174474B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 210
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 217
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 44
- 239000006249 magnetic particle Substances 0.000 claims description 36
- 229910000531 Co alloy Inorganic materials 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 125000004429 atom Chemical group 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000007789 gas Substances 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 229910052804 chromium Inorganic materials 0.000 description 12
- 230000005415 magnetization Effects 0.000 description 12
- 238000005477 sputtering target Methods 0.000 description 11
- 229910044991 metal oxide Inorganic materials 0.000 description 10
- 150000004706 metal oxides Chemical class 0.000 description 10
- 229910052758 niobium Inorganic materials 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 229910052721 tungsten Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000007885 magnetic separation Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 8
- 230000003993 interaction Effects 0.000 description 8
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910019222 CoCrPt Inorganic materials 0.000 description 4
- 230000001050 lubricating effect Effects 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910018979 CoPt Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000684 Cobalt-chrome Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000010952 cobalt-chrome Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
- G11B5/7369—Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
- G11B5/737—Physical structure of underlayer, e.g. texture
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/007—Thin magnetic films, e.g. of one-domain structure ultrathin or granular films
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Chemical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
- Physical Vapour Deposition (AREA)
Description
Y. Inaba et al., "Optimization of the SiO2 Content in CoPtCr−SiO2 Perpendicular Recording Media for High−Density Recording", IEEE TRANSACTIONS ON MAGNETICS,VOL. 40, NO. 4, JULY 2004 T. P. Nolan et.al.,"Microstructure and Exchange Coupling of Segregated Oxide PerpendicularRecording Media", IEEE TRANSACTIONS ON MAGNETICS, VOL. 43, NO. 2, FEBRUARY2007
Metric Margin)値の変化を示す図である。図7中、縦軸はVMM値を示し、横軸は酸化物グラニュラ磁性層(第1の磁性層)19へのCoOの添加量(mol.%)を示す。VMM値は、ビタビ復調法(Viterbi decoding)によりエラー訂正された信号の誤り率を示し、エラーレートに比例し、VMM値が小さい程垂直磁気記録媒体31のR/W性能が良好であることを示す。信号復調時、正しいパスと誤りパスの差を明確に区別するためには、理想値との差(メトリック値)が大きい必要があり、VMM値とは正しいパスと誤りパスによるメトリック値の差がある閾値を下回った場合の数で定義され、その値が大きい程エラーが発生しやすい状態を示す。図7からもわかるように、酸化物グラニュラ磁性層(第1の磁性層)19へのCoOの添加によりVMM値が良好となっていることが分かる。しかし、酸化物グラニュラ磁性層(第1の磁性層)19へのCoOの添加量が約6mol.%以上になると、VMM値はむしろ劣化しており、このVMM値の劣化はCoOが酸素の供給源として必要な量以上に添加されいるのが原因と考えられる。即ち、良好なR/W性能を得るという観点からは、酸化物グラニュラ磁性層(第1の磁性層)19へのCoOの添加量は約2mol.%以上、且つ、約5mol.%以下であることが好ましいと考えられる。
11 非磁性基板
12 密着層
13 軟磁性層
14 結合層
15 軟磁性層
16 シード層
17 中間層
18 非磁性グラニュラ中間層
19 酸化物グラニュラ磁性層(第1の磁性層)
20 酸化物グラニュラ磁性層(第2の磁性層)
21 磁性層(第3の磁性層)
22 保護層
23 潤滑層
Claims (8)
- 非磁性基板の上方に設けられた中間層上に記録層を構成するグラニュラ磁性層を形成する磁気記録媒体の製造方法であって、
Co合金からなる複数の磁性粒子及び前記複数の磁性粒子を磁気的に分離する酸化物からなる該グラニュラ磁性層をターゲットを用いたスパッタリングにより形成する工程を含み、
該ターゲットは、Co合金と、第1の酸化物と、第2の酸化物を含み、
該第1の酸化物はTiO2であり、該ターゲットが含むTiO2はモル分率で約6mol.%以上、且つ、約20mol.%以下であり、
該第2の酸化物はCoOであり、該ターゲットが含むCoOはモル分率で約1mol.%以上、且つ、約6mol.%以下である
ことを特徴とする、磁気記録媒体の製造方法。 - 該第1の酸化物は、該第2の酸化物よりも酸化物生成エネルギーが低いことを特徴とする、請求項1記載の磁気記録媒体の製造方法。
- 該ターゲットが含むCoOはモル分率で約2mol.%以上、且つ、約5mol.%以下であることを特徴とする、請求項1又は2記載の磁気記録媒体の製造方法。
- 該ターゲットは、該Co合金と該第1及び第2の酸化物を含む単一のターゲットであることを特徴とする、請求項1乃至3のいずれか1項記載の磁気記録媒体の製造方法。
- 該ターゲットは、該Co合金と該第1及び第2の酸化物のうち1以上の材料を含む2以上のターゲットであることを特徴とする、請求項1乃至3のいずれか1項記載の磁気記録媒体の製造方法。
- 該グラニュラ磁性層は、単層構造を有する記録層を構成することを特徴とする、請求項1乃至5のいずれか1項記載の磁気記録媒体の製造方法。
- 該グラニュラ磁性層は、多層構造を有する記録層に含まれる少なくとも1以上の層であることを特徴とする、請求項1乃至5のいずれか1項記載の磁気記録媒体の製造方法。
- 該中間層はRu中間層及び非磁性CoCr−SiO2グラニュラ中間層を含み、該磁気記録媒体は垂直磁気記録方式を採用することを特徴とする、請求項1乃至7のいずれか1項記載の磁気記録媒体の製造方法。
Priority Applications (2)
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JP2008008936A JP5174474B2 (ja) | 2008-01-18 | 2008-01-18 | 磁気記録媒体の製造方法 |
US12/355,279 US20090183985A1 (en) | 2008-01-18 | 2009-01-16 | Method of manufacturing magnetic recording medium |
Applications Claiming Priority (1)
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JP2008008936A JP5174474B2 (ja) | 2008-01-18 | 2008-01-18 | 磁気記録媒体の製造方法 |
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JP2009170052A JP2009170052A (ja) | 2009-07-30 |
JP5174474B2 true JP5174474B2 (ja) | 2013-04-03 |
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JP2008008936A Active JP5174474B2 (ja) | 2008-01-18 | 2008-01-18 | 磁気記録媒体の製造方法 |
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US (1) | US20090183985A1 (ja) |
JP (1) | JP5174474B2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2009238357A (ja) * | 2008-03-28 | 2009-10-15 | Fujitsu Ltd | 磁気記録媒体の製造方法 |
SG172395A1 (en) * | 2008-12-26 | 2011-08-29 | Mitsui Mining & Smelting Co | Sputtering target and method of forming film |
JP4892073B2 (ja) * | 2010-03-30 | 2012-03-07 | 株式会社東芝 | 磁気記録媒体、その製造方法、及び磁気記録再生装置 |
JP5888664B2 (ja) * | 2010-12-20 | 2016-03-22 | Jx金属株式会社 | 強磁性材スパッタリングターゲット |
US20130213802A1 (en) * | 2010-12-22 | 2013-08-22 | Jx Nippon Mining & Metals Corporation | Sintered Compact Sputtering Target |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US6156404A (en) * | 1996-10-18 | 2000-12-05 | Komag, Inc. | Method of making high performance, low noise isotropic magnetic media including a chromium underlayer |
JP2002197633A (ja) * | 2000-12-22 | 2002-07-12 | Sony Corp | 磁気記録媒体 |
US7842409B2 (en) * | 2001-11-30 | 2010-11-30 | Seagate Technology Llc | Anti-ferromagnetically coupled perpendicular magnetic recording media with oxide |
JP3773104B2 (ja) * | 2001-12-11 | 2006-05-10 | 富士電機デバイステクノロジー株式会社 | 磁気記録媒体およびその製造方法 |
US7186471B2 (en) * | 2002-02-28 | 2007-03-06 | Seagate Technology Llc | Chemically ordered, cobalt-three platinum alloys for magnetic recording |
WO2004090874A1 (en) * | 2003-04-07 | 2004-10-21 | Showa Denko K. K. | Magnetic recording medium, method for producing thereof, and magnetic recording and reproducing apparatus. |
JP4213001B2 (ja) * | 2003-09-25 | 2009-01-21 | 株式会社東芝 | 垂直磁気記録媒体、及び磁気記録再生装置 |
JP4255826B2 (ja) * | 2003-12-26 | 2009-04-15 | 株式会社東芝 | 磁気記録媒体及び磁気記録媒体の製造方法並びに磁気記録再生装置 |
JP2006164440A (ja) * | 2004-12-09 | 2006-06-22 | Fuji Electric Device Technology Co Ltd | 垂直磁気記録媒体および磁気記録装置 |
JP2006268972A (ja) * | 2005-03-24 | 2006-10-05 | Hoya Corp | 垂直磁気記録ディスク及びその製造方法 |
US20060289294A1 (en) * | 2005-06-24 | 2006-12-28 | Heraeus, Inc. | Enhanced oxygen non-stoichiometry compensation for thin films |
US7491452B2 (en) * | 2005-08-12 | 2009-02-17 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording disk with recording layer containing selected metal oxides and formed on a reduced-thickness exchange-break layer |
US8309239B2 (en) * | 2007-03-30 | 2012-11-13 | Wd Media (Singapore) Pte. Ltd. | Perpendicular magnetic recording medium and method of manufacturing the same |
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2008
- 2008-01-18 JP JP2008008936A patent/JP5174474B2/ja active Active
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2009
- 2009-01-16 US US12/355,279 patent/US20090183985A1/en not_active Abandoned
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JP2009170052A (ja) | 2009-07-30 |
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