JP5167671B2 - 半導体素子 - Google Patents

半導体素子 Download PDF

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Publication number
JP5167671B2
JP5167671B2 JP2007093349A JP2007093349A JP5167671B2 JP 5167671 B2 JP5167671 B2 JP 5167671B2 JP 2007093349 A JP2007093349 A JP 2007093349A JP 2007093349 A JP2007093349 A JP 2007093349A JP 5167671 B2 JP5167671 B2 JP 5167671B2
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JP
Japan
Prior art keywords
seal ring
semiconductor substrate
noise
wiring
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007093349A
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English (en)
Japanese (ja)
Other versions
JP2008135675A5 (enExample
JP2008135675A (ja
Inventor
隆英 門山
雅美 阿部
篤司 加茂
隆章 山田
千広 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007093349A priority Critical patent/JP5167671B2/ja
Priority to US11/976,792 priority patent/US7675143B2/en
Publication of JP2008135675A publication Critical patent/JP2008135675A/ja
Publication of JP2008135675A5 publication Critical patent/JP2008135675A5/ja
Application granted granted Critical
Publication of JP5167671B2 publication Critical patent/JP5167671B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/642—Capacitive arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007093349A 2006-10-31 2007-03-30 半導体素子 Expired - Fee Related JP5167671B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007093349A JP5167671B2 (ja) 2006-10-31 2007-03-30 半導体素子
US11/976,792 US7675143B2 (en) 2006-10-31 2007-10-29 Semiconductor element, semiconductor device and mounting board

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006296532 2006-10-31
JP2006296532 2006-10-31
JP2007093349A JP5167671B2 (ja) 2006-10-31 2007-03-30 半導体素子

Publications (3)

Publication Number Publication Date
JP2008135675A JP2008135675A (ja) 2008-06-12
JP2008135675A5 JP2008135675A5 (enExample) 2010-01-28
JP5167671B2 true JP5167671B2 (ja) 2013-03-21

Family

ID=39329130

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007093349A Expired - Fee Related JP5167671B2 (ja) 2006-10-31 2007-03-30 半導体素子

Country Status (2)

Country Link
US (1) US7675143B2 (enExample)
JP (1) JP5167671B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009107182A1 (ja) * 2008-02-28 2009-09-03 パナソニック株式会社 電極パッドを有する半導体装置、及び該半導体装置を備えた無線回路装置
US8188578B2 (en) * 2008-05-29 2012-05-29 Mediatek Inc. Seal ring structure for integrated circuits
US8810001B2 (en) * 2011-06-13 2014-08-19 Mediatek Inc. Seal ring structure with capacitor
US8530997B1 (en) * 2012-07-31 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Double seal ring
JP6026322B2 (ja) 2013-03-12 2016-11-16 ルネサスエレクトロニクス株式会社 半導体装置およびレイアウト設計システム
JP2015109496A (ja) * 2013-12-03 2015-06-11 株式会社東芝 半導体装置
JP5775139B2 (ja) * 2013-12-16 2015-09-09 ルネサスエレクトロニクス株式会社 半導体装置
CN106876318B (zh) * 2015-12-11 2020-05-08 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US20200075507A1 (en) * 2018-08-30 2020-03-05 Nanya Technology Corporation Semiconductor device and method for preparing the same
CN111834359B (zh) * 2020-08-03 2025-07-29 牛芯半导体(深圳)有限公司 电容版图结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085630A (ja) * 1999-07-14 2001-03-30 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
JP2004179255A (ja) 2002-11-25 2004-06-24 Sony Corp 半導体集積回路
US20050110118A1 (en) 2003-11-26 2005-05-26 Texas Instruments Incorporated Scribe seal providing enhanced substrate noise isolation
WO2006011320A1 (ja) * 2004-07-30 2006-02-02 Murata Manufacturing Co., Ltd. 複合型電子部品及びその製造方法
JP4689244B2 (ja) * 2004-11-16 2011-05-25 ルネサスエレクトロニクス株式会社 半導体装置
JP2007059676A (ja) * 2005-08-25 2007-03-08 Matsushita Electric Ind Co Ltd 半導体装置
JP4949733B2 (ja) * 2006-05-11 2012-06-13 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US20080099886A1 (en) 2008-05-01
JP2008135675A (ja) 2008-06-12
US7675143B2 (en) 2010-03-09

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