JP5167560B2 - 電界効果トランジスタ - Google Patents
電界効果トランジスタ Download PDFInfo
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- JP5167560B2 JP5167560B2 JP2008513095A JP2008513095A JP5167560B2 JP 5167560 B2 JP5167560 B2 JP 5167560B2 JP 2008513095 A JP2008513095 A JP 2008513095A JP 2008513095 A JP2008513095 A JP 2008513095A JP 5167560 B2 JP5167560 B2 JP 5167560B2
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- effect transistor
- field effect
- semiconductor material
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- -1 octoxycarbonyl group Chemical group 0.000 claims description 21
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 125000001931 aliphatic group Chemical group 0.000 claims description 9
- 229910003472 fullerene Inorganic materials 0.000 claims description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 8
- 125000001624 naphthyl group Chemical group 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 6
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- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
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- 125000002252 acyl group Chemical group 0.000 description 4
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 4
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
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| JP2008513095A JP5167560B2 (ja) | 2006-03-31 | 2007-02-20 | 電界効果トランジスタ |
| PCT/JP2007/053092 WO2007125671A1 (fr) | 2006-03-31 | 2007-02-20 | Transistor a effet de champ |
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| WO (1) | WO2007125671A1 (fr) |
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| US11066418B2 (en) | 2018-11-26 | 2021-07-20 | Samsung Electronics Co., Ltd. | Compound and thin film transistor and electronic device |
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| JP2516688B2 (ja) * | 1989-08-02 | 1996-07-24 | シャープ株式会社 | 液晶表示装置 |
| US9073938B2 (en) * | 2007-05-24 | 2015-07-07 | Nippon Kayaku Kabushiki Kaisha | Method for producing aromatic compound |
| JP5252482B2 (ja) * | 2008-03-31 | 2013-07-31 | 国立大学法人広島大学 | 発光素子 |
| JP5487655B2 (ja) | 2008-04-17 | 2014-05-07 | 株式会社リコー | ［１］ベンゾチエノ［３，２‐ｂ］［１］ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス |
| CN102017210B (zh) * | 2008-04-24 | 2013-05-29 | 默克专利股份有限公司 | 电子器件 |
| JP5420191B2 (ja) * | 2008-04-25 | 2014-02-19 | 山本化成株式会社 | 有機トランジスタ |
| JP2010010549A (ja) * | 2008-06-30 | 2010-01-14 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JP2010016037A (ja) * | 2008-07-01 | 2010-01-21 | Konica Minolta Holdings Inc | 薄膜トランジスタの製造方法 |
| US7812346B2 (en) * | 2008-07-16 | 2010-10-12 | Cbrite, Inc. | Metal oxide TFT with improved carrier mobility |
| TWI394306B (zh) * | 2008-08-26 | 2013-04-21 | Univ Nat Chiao Tung | 光電記憶體元件、其製造以及量測方法 |
| EP2361915B1 (fr) * | 2008-11-21 | 2015-01-28 | Nippon Kayaku Kabushiki Kaisha | Nouveau composé hétérocyclique et utilisation de celui-ci |
| KR101829309B1 (ko) | 2010-01-22 | 2018-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9496405B2 (en) | 2010-05-20 | 2016-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer |
| DE102010031897A1 (de) | 2010-07-21 | 2012-01-26 | Heraeus Clevios Gmbh | Halbleiter auf Basis substituierter [1] Benzothieno[3,2-b][1]-benzothiophene |
| KR101819996B1 (ko) | 2011-03-10 | 2018-01-18 | 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 | 유기반도체 재료 |
| KR20140009023A (ko) * | 2012-07-13 | 2014-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN107710435B (zh) * | 2015-07-17 | 2021-02-19 | 索尼公司 | 光电转换元件、图像拾取元件、层叠型图像拾取元件和固态图像拾取装置 |
| WO2017159025A1 (fr) | 2016-03-15 | 2017-09-21 | ソニー株式会社 | Élément de conversion photoélectrique et dispositif de prise d'image à semi-conducteurs |
| KR102631401B1 (ko) * | 2018-08-28 | 2024-01-29 | 삼성전자주식회사 | 화합물, 박막 트랜지스터 및 전자 소자 |
| US20240292641A1 (en) | 2021-06-30 | 2024-08-29 | Sony Group Corporation | Semiconductor element and semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08228034A (ja) * | 1994-12-09 | 1996-09-03 | At & T Corp | 有機薄膜トランジスタ装置 |
| JP2005154371A (ja) * | 2003-11-27 | 2005-06-16 | Japan Science & Technology Agency | 新規なベンゾジカルコゲノフェン誘導体、その製造方法およびそれを用いた有機半導体デバイス |
| JP2007273594A (ja) * | 2006-03-30 | 2007-10-18 | Nippon Kayaku Co Ltd | 電界効果トランジスタ |
-
2007
- 2007-02-20 JP JP2008513095A patent/JP5167560B2/ja not_active Expired - Fee Related
- 2007-02-20 WO PCT/JP2007/053092 patent/WO2007125671A1/fr active Application Filing
- 2007-02-27 TW TW096106876A patent/TW200802864A/zh unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08228034A (ja) * | 1994-12-09 | 1996-09-03 | At & T Corp | 有機薄膜トランジスタ装置 |
| JP2005154371A (ja) * | 2003-11-27 | 2005-06-16 | Japan Science & Technology Agency | 新規なベンゾジカルコゲノフェン誘導体、その製造方法およびそれを用いた有機半導体デバイス |
| JP2007273594A (ja) * | 2006-03-30 | 2007-10-18 | Nippon Kayaku Co Ltd | 電界効果トランジスタ |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11066418B2 (en) | 2018-11-26 | 2021-07-20 | Samsung Electronics Co., Ltd. | Compound and thin film transistor and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2007125671A1 (ja) | 2009-09-10 |
| WO2007125671A1 (fr) | 2007-11-08 |
| TW200802864A (en) | 2008-01-01 |
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