JP5166297B2 - 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 - Google Patents

酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 Download PDF

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JP5166297B2
JP5166297B2 JP2009011027A JP2009011027A JP5166297B2 JP 5166297 B2 JP5166297 B2 JP 5166297B2 JP 2009011027 A JP2009011027 A JP 2009011027A JP 2009011027 A JP2009011027 A JP 2009011027A JP 5166297 B2 JP5166297 B2 JP 5166297B2
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oxide film
silicon oxide
film
plasma
oxidation treatment
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JP2010171128A (ja
JP2010171128A5 (https=
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義郎 壁
淳一 北川
紀久夫 山部
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

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  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2009011027A 2009-01-21 2009-01-21 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体 Active JP5166297B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009011027A JP5166297B2 (ja) 2009-01-21 2009-01-21 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体
US12/550,788 US8026187B2 (en) 2009-01-21 2009-08-31 Method of forming silicon oxide film and method of production of semiconductor memory device using this method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009011027A JP5166297B2 (ja) 2009-01-21 2009-01-21 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体

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JP2010171128A JP2010171128A (ja) 2010-08-05
JP2010171128A5 JP2010171128A5 (https=) 2012-03-08
JP5166297B2 true JP5166297B2 (ja) 2013-03-21

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* Cited by examiner, † Cited by third party
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JP5479304B2 (ja) * 2010-11-10 2014-04-23 信越半導体株式会社 シリコン単結晶ウェーハの熱酸化膜形成方法
KR101854609B1 (ko) 2011-12-27 2018-05-08 삼성전자주식회사 게이트 절연층의 형성 방법
US10622449B2 (en) * 2012-04-05 2020-04-14 X-Fab Semiconductor Foundries Gmbh Method of fabricating a tunnel oxide layer and a tunnel oxide layer for a semiconductor device
EP2772934A1 (en) * 2013-02-28 2014-09-03 Singulus Technologies AG Method and system for naturally oxidizing a substrate
US10945313B2 (en) * 2015-05-27 2021-03-09 Applied Materials, Inc. Methods and apparatus for a microwave batch curing process
US20200211840A1 (en) 2017-07-19 2020-07-02 Globalwafers Japan Co., Ltd. Method for producing three-dimensional structure, method for producing vertical transistor, vertical transistor wafer, and vertical transistor substrate
KR102516580B1 (ko) 2018-09-13 2023-03-30 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체
US11629409B2 (en) * 2019-05-28 2023-04-18 Applied Materials, Inc. Inline microwave batch degas chamber
JP7465979B2 (ja) * 2020-03-10 2024-04-11 アプライド マテリアルズ インコーポレイテッド 選択的な酸化および簡略化された前洗浄
US12272531B2 (en) * 2021-12-29 2025-04-08 Applied Materials, Inc. Dual pressure oxidation method for forming an oxide layer in a feature

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JPS5314470B2 (https=) * 1974-05-22 1978-05-17
JPS51125698A (en) * 1975-04-03 1976-11-02 Mitsubishi Electric Corp The formation of silicon dioxide film
JP3439580B2 (ja) * 1995-09-26 2003-08-25 株式会社リコー シリコン酸化膜の形成方法および形成装置
JPH09223752A (ja) * 1996-02-16 1997-08-26 Hitachi Ltd 不揮発性半導体記憶装置の製造方法
US6461984B1 (en) * 1997-03-18 2002-10-08 Korea Advanced Institute Of Science & Technology Semiconductor device using N2O plasma oxide and a method of fabricating the same
JP3233281B2 (ja) * 1999-02-15 2001-11-26 日本電気株式会社 ゲート酸化膜の形成方法
EP1115147A4 (en) 1999-05-26 2007-05-02 Tadahiro Ohmi DEVICE FOR PLASMA TREATMENT
WO2002059956A1 (en) 2001-01-25 2002-08-01 Tokyo Electron Limited Method of producing electronic device material
CN100390945C (zh) 2002-03-29 2008-05-28 东京毅力科创株式会社 基底绝缘膜的形成方法
JP4408653B2 (ja) 2003-05-30 2010-02-03 東京エレクトロン株式会社 基板処理方法および半導体装置の製造方法
JP4965849B2 (ja) 2004-11-04 2012-07-04 東京エレクトロン株式会社 絶縁膜形成方法およびコンピュータ記録媒体
JP4718189B2 (ja) * 2005-01-07 2011-07-06 東京エレクトロン株式会社 プラズマ処理方法
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JP2007201507A (ja) 2007-05-01 2007-08-09 Tokyo Electron Ltd 基板処理方法および基板処理装置

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